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The photocurrent is very small when the visible light irradiates the semi-insulating silicon carbide. The femtosecond laser pulses are used to modify the silicon carbide surface, and the result shows that the photocurrent is enlarged several times according to the measurement results of photoconductivity. In order to explain the reasons for this change, some characterization means are employed, including the absorption, emission and X-ray photoelectron spectra. There are found some changes in the absorption spectra and emission spectra, and also in the silicon and carbon atom ratio according to the test results of X-ray photoelectron spectrum. We think that the changes of the crystal structure and atom ratio between silicon and carbon lead to the change of electronic energy band structure and the occurrence of many defect states. As a result, the photocurrents are improved in the range of visible light on the surface of 6H-SiC after the femtosecond laser pulses have irradiated the surface.
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Keywords:
- photoconductivity /
- 6H-SiC /
- femtosecond laser
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[5] Ball Z, Phillips H M, Callahan D L, Sauerbrey R 1994 Phys. Rev. Lett. 73 2099
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[7] Zhao Q Z, Ciobanu F, Malzer S, Wang L J 2007 Appl. Phys. Lett. 91 121107
[8] Wu X J, Jia T Q, Zhao F L, Huang M, Chen H X, Xu N S, Xu Z Z 2007 Acta Opt. Sin. 27 106 (in Chinese) [吴晓君, 贾天卿, 赵福利, 黄敏, 陈洪新, 许宁生, 徐至展 2007 光学学报 27 106]
[9] Jiang T, Zhao Q L, Dong Z W, Fan R W, Yu X 2010 Infrared and Laser Engineering 39 1044 (in Chinese) [姜涛, 赵清亮, 董志伟, 樊荣伟, 于欣 2010 红外与激光工程 39 1044]
[10] Zhang Y, Jia Xin, Xiong P X, Jia T Q 2010 Chin. Opt. Lett. 8 1203
[11] Zhao M, Su W F, Zhao L 2003 Physics 32 455 (in Chinese) [赵明, 苏卫锋, 赵利 2003 物理 32 455]
[12] Sarnet T, Halbwax M, Torres R, Delaporte P, Sentis M, Martinuzzi S, Vervisch V, Torregrosa F, Etienne H, Roux L, Bastide S 2008 Proc. of SPIE 6881 688119-1
[13] Ding S J, Wang P F, Zhang W, Wang J T, Wei W L 2001 Chin. Phys. 10 324
[14] Che J F, Zhou L, Ma J J, Wu Y L, Wang X 2005 J. Vacuum Sci. Technol. 25 252 (in Chinese) [车剑飞, 周莉, 马佳郡, 伍玉兰, 汪信 2005 真空科学与技术学报 25 252]
[15] Strass A, Bieringer P, Hansch W, Fuenzalida V, Alvarez A, Luna J, Martil I, Martinez F L, Eisele I 1999 Thin Solid Films 349 135
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[1] Chichkov B N, Momma C, Nolte S 1996 Appl. Phys. A 63 109
[2] Matsuo S, Kiyama S, Shichijo Y, Tomita T, Hashimoto S, Hosokawa Y, Masuhara H 2008 Appl. Phys. Lett. 93 051107
[3] Zeng H D, Qu S L, Jiang X W, Qiu J R, Zhu C S, Gan F X 2003 Acta Phys. Sin. 52 2525 (in Chinese) [曾惠丹, 曲士良, 姜雄伟, 邱建荣, 朱从善, 干福熹 2003 物理学报 52 2525]
[4] Phillips H M, Wahl S, Sauerbrey R 1993 Appl. Phys. Lett. 62 2572
[5] Ball Z, Phillips H M, Callahan D L, Sauerbrey R 1994 Phys. Rev. Lett. 73 2099
[6] Manato D, Takuto I, Minoru Y, Takuro T, Shigeki M, Shuichi H, Takahiro K, Toshiro I, Shinobu O, Takeshi O 2011 Appl. Phys. Lett. 98 133104
[7] Zhao Q Z, Ciobanu F, Malzer S, Wang L J 2007 Appl. Phys. Lett. 91 121107
[8] Wu X J, Jia T Q, Zhao F L, Huang M, Chen H X, Xu N S, Xu Z Z 2007 Acta Opt. Sin. 27 106 (in Chinese) [吴晓君, 贾天卿, 赵福利, 黄敏, 陈洪新, 许宁生, 徐至展 2007 光学学报 27 106]
[9] Jiang T, Zhao Q L, Dong Z W, Fan R W, Yu X 2010 Infrared and Laser Engineering 39 1044 (in Chinese) [姜涛, 赵清亮, 董志伟, 樊荣伟, 于欣 2010 红外与激光工程 39 1044]
[10] Zhang Y, Jia Xin, Xiong P X, Jia T Q 2010 Chin. Opt. Lett. 8 1203
[11] Zhao M, Su W F, Zhao L 2003 Physics 32 455 (in Chinese) [赵明, 苏卫锋, 赵利 2003 物理 32 455]
[12] Sarnet T, Halbwax M, Torres R, Delaporte P, Sentis M, Martinuzzi S, Vervisch V, Torregrosa F, Etienne H, Roux L, Bastide S 2008 Proc. of SPIE 6881 688119-1
[13] Ding S J, Wang P F, Zhang W, Wang J T, Wei W L 2001 Chin. Phys. 10 324
[14] Che J F, Zhou L, Ma J J, Wu Y L, Wang X 2005 J. Vacuum Sci. Technol. 25 252 (in Chinese) [车剑飞, 周莉, 马佳郡, 伍玉兰, 汪信 2005 真空科学与技术学报 25 252]
[15] Strass A, Bieringer P, Hansch W, Fuenzalida V, Alvarez A, Luna J, Martil I, Martinez F L, Eisele I 1999 Thin Solid Films 349 135
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