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2020, 69(11): 117701.
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Li Yuan-Yuan, Yu Yin, Meng Chuan-Min, Zhang Lu, Wang Tao, Li Yong-Qiang, He Hong-Liang, He Duan-Wei. Dynamic impact strength of diamond-SiC superhard composite. Acta Physica Sinica,
2019, 68(15): 158101.
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2015, 64(16): 168501.
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2012, 61(2): 028101.
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2010, 59(11): 8113-8117.
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Yuan Guang-Cai, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Xu Na, Sun Qin-Jun, Xu Xu-Rong. Study of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage. Acta Physica Sinica,
2009, 58(7): 4941-4947.
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Liu Yu-Rong, Wang Zhi-Xin, Yu Jia-Le, Xu Hai-Hong. High mobility polymer thin-film transistors. Acta Physica Sinica,
2009, 58(12): 8566-8570.
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Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin. Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica,
2008, 57(9): 6007-6012.
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Tang Xiao-Yan, Zhang Yi-Men, Zhang He-Ming, Zhang Yu-Ming, Dai Xian-Ying, Hu Hui-Yong. 3UCVD deposition SiO2 on SiC wafer and its C-V measurement. Acta Physica Sinica,
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Yang Lin-An, Zhang Yi-Men, Yu Chun-Li, Zhang Yu-Ming. Trapping effect modeling for SiC power MESFETs. Acta Physica Sinica,
2003, 52(2): 302-306.
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SHANG YE-CHUN, ZHANG YI-MEN, ZHANG YU-MING. MONTE CARLO STUDY ON INTERFACE ROUGHNESS DEPENDENCE OF ELECTRON MOBILITY IN 6H-SiC INVERSION LAYERS. Acta Physica Sinica,
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REN HONG-XIA, HAO YUE, XU DONG-GANG. STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR. Acta Physica Sinica,
2000, 49(7): 1241-1248.
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