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基于栅绝缘层表面修饰的有机场效应晶体管迁移率的研究进展

石巍巍 李雯 仪明东 解令海 韦玮 黄维

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基于栅绝缘层表面修饰的有机场效应晶体管迁移率的研究进展

石巍巍, 李雯, 仪明东, 解令海, 韦玮, 黄维

Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modification

Shi Wei-Wei, Li-Wen, Yi Ming-Dong, Xie Ling-Hai, Wei-Wei, Huang Wei
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  • 栅绝缘层的表面性质对有机场效应晶体管(OFETs)的半导体薄膜的形貌、 晶粒生长的有序性和载流子的传输有着重大的影响.研究表明, 通过改进栅绝缘层的表面性质, 可以有效提高有机场效应晶体管的迁移率. 本文综述了OFETs绝缘层表面的粗糙度和表面能对OFETs迁移率的影响, 重点探讨了栅绝缘层表面修饰常用的方法, 即自组装单层(SAMs)修饰和聚合物修饰与迁移率改进之间的研究进展.最后, 展望了该研究方向未来可能的发展趋势.
    The surface property of the dielectric has a significant influence on growth, morphology, order of the organic semiconductor, and charge carrier transport. The relevant research shows that the mobility of organic field-effect transistor could be effectively improved via ameliorating the surface property of the dielectric. The purpose of this review is to introduce the main factors, including the roughness and the surface energy of dielectric, which exert a tremendous influence on the field effect mobility of OFET, and chiefly describe the progress of the two common methods used for the dielectric modification, viz., the self-assembled monolayer modification and the polymer modification. Finally, the novel applications at present are summarized in this review and some perspectives on the research trend are proposed.
    • 基金项目: 国家重点基础研究发展计划(批准号: 2009CB930600, 2012CB933301, 2012CB723402)、 国家自然科学基金(批准号: 61077070, 21144004, 60977023)、 教育部博士点基金(批准号: 20113223120003)、 江苏省自然科学基金(批准号: BK2011761, SBK201122680)、 江苏省高校自然科学基础研究面上项目(批准号: 11KJB510017)、 南京邮电大学人才科研启动基金(批准号: NY211022, NY210002, NY210030) 和江苏省高校优秀科技创新团队(批准号: TJ209035).
    • Funds: Project supported by the National Basic Research Program of China (Grants Nos. 2009CB930600, 2012CB933301, 2012CB723402), the National Natural Science Foundation of China (Grant Nos. 61077070, 21144004, 60977023), the Key Project of Chinese Ministry of Education, China (Grant No. 20113223120003 ), the NSF of Jiangsu Province, China (Grants Nos. BK2011761, SBK201122680), the NSF of the Education Committee of Jiangsu Province, China (Grant No. 11KJB510017), NJUPT (Grants Nos. NY211022, NY210002, NY210030), and the Creative Research Group of Jiangsu College Council (Grant No TJ209035).
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  • [1]

    Veres J, Ogier S, Lloyd G, de Leeuw D 2004 Chem. Mater. 16 4543

    [2]

    Novak M, Ebel A, Meyer-Friedrichsen T, Jedaa A, Vieweg B F, Yang G A, Voitchovsky K, Stellacci F, Spiecker E, Hitsch A, Halik M 2011 Nano Lett. 11 156

    [3]

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    [4]

    Yoon M H, Kim C, Facchetti A, Marks T J 2006 J. Am. Chem. Soc. 128 12851

    [5]

    Shekar B C, Lee J Y, Rhee S W 2004 Korean J. Chem. Eng. 21 267

    [6]

    Chung Y Y, Verploegen E, Vailionis A, Sun Y, Nishi Y, Murmann B, Bao Z A 2011 Nano Lett. 11 1161

    [7]

    Katsuta S, Miyagi D, Yamada H, Okujima T, Mori S, Nakayama K, Uno H 2011 Org. Lett. 13 1454

    [8]

    Kim S H, Hong K, Jang M, Jang J, Anthony J E, Yang H, Park C E 2010 Adv. Mater. 22 4809

    [9]

    Liao K C, Ismail A G, Kreplak L, Schwartz J, Hill I G 2010 Adv. Mater. 22 3081

    [10]

    Chou W Y, Kuo C W, Chang C W, Yeh B L, Chang M H 2010 J. Mater. Chem. 20 5474

    [11]

    Liu Y Y, Song C L, Zeng W J, Zhou K G, Shi Z F, Ma C B, Yang F, Zhang H L, Gong X 2010 J. Am. Chem. Soc. 132 16349

    [12]

    DiBenedetto S A, Facchetti A, Ratner M A, Marks T J 2009 Adv. Mater. 21 1407

    [13]

    Facchetti A, Yoon M H, Marks T J 2005 Adv. Mater. 17 1705

    [14]

    Horowitz G 2010 Org. Electron. 223 113

    [15]

    Dodabalapur A 2006 Mater. Today. 9 24

    [16]

    Chua L L, Zaumseil J, Chang J F, Ou E C W, Ho P K H, Sirringhaus H, Friend R H 2005 Nature 434 194

    [17]

    Di C A, Liu Y Q, Yu G, Zhu D B 2009 Accounts. Chem. Res. 42 1573

    [18]

    Shea P B, Kanicki J, Ono N 2005 J. Appl. Phys. 98 014503

    [19]

    Liu J, Hennek J W, Buchholz D B, Ha Y G, Xie S J, Dravid V P, Chang R P H, Facchetti A, Marks T J 2011 Adv. Mater. 23 992

    [20]

    Possanner S K, Zojer K, Pacher P, Zojer E, Schuerrer F 2009 Adv. Funct. Mater. 19 958

    [21]

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    [22]

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    [23]

    Steudel S, De Vusser S, De Jonge S, Janssen D, Verlaak S, Genoe J, Heremans P 2004 Appl. Phys. Lett. 85 4400

    [24]

    Yang H, Yang C, Kim S H, Jang M, Park C E 2010 ACS Appl. Mater. Interfaces 2 391

    [25]

    Jo P S, Sung J, Park C, Kim E, Ryu D Y, Pyo S, Kim H C, Hong J M 2008 Adv. Funct. Mater. 18 1202

    [26]

    Chua L L, Ho P K H, Sirringhaus H, Friend R H 2004 Adv. Mater. 16 1609

    [27]

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    [28]

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    [29]

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    [30]

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    [31]

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    [34]

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    [35]

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    [36]

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    Singh K A, Nelson T L, Belot J A, Young T M, Dhumal N R, Kowalewski T, McCullough R D, Nachimuthu P, Thevuthasan S, Porter L M 2011 ACS Appl. Mater. Interfaces 3 2973

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出版历程
  • 收稿日期:  2012-03-05
  • 修回日期:  2012-06-14
  • 刊出日期:  2012-11-05

基于栅绝缘层表面修饰的有机场效应晶体管迁移率的研究进展

  • 1. 南京邮电大学信息材料与纳米技术研究院, 有机电子与信息显示国家重点实验室培育基地, 南京 210046;
  • 2. 南京邮电大学信息材料与光电工程学院, 南京 210046
    基金项目: 国家重点基础研究发展计划(批准号: 2009CB930600, 2012CB933301, 2012CB723402)、 国家自然科学基金(批准号: 61077070, 21144004, 60977023)、 教育部博士点基金(批准号: 20113223120003)、 江苏省自然科学基金(批准号: BK2011761, SBK201122680)、 江苏省高校自然科学基础研究面上项目(批准号: 11KJB510017)、 南京邮电大学人才科研启动基金(批准号: NY211022, NY210002, NY210030) 和江苏省高校优秀科技创新团队(批准号: TJ209035).

摘要: 栅绝缘层的表面性质对有机场效应晶体管(OFETs)的半导体薄膜的形貌、 晶粒生长的有序性和载流子的传输有着重大的影响.研究表明, 通过改进栅绝缘层的表面性质, 可以有效提高有机场效应晶体管的迁移率. 本文综述了OFETs绝缘层表面的粗糙度和表面能对OFETs迁移率的影响, 重点探讨了栅绝缘层表面修饰常用的方法, 即自组装单层(SAMs)修饰和聚合物修饰与迁移率改进之间的研究进展.最后, 展望了该研究方向未来可能的发展趋势.

English Abstract

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