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Polymer-based thin film transistors (PTFTs) with poly(3-hexylthiophene) (P3HT) as semiconducting active layers are successfully fabricated on silicon substrates in air which are used as gate electrods. HfTiO film deposited by RF sputtering method is used as gate insulators,and gold metal is used as source and drain electrodes. The HfTiO surface is modified by using octadecyltrichlorosilane solution in the fabrication process. Experimental results indicate that the PTFTs show good saturation behaviors at low drive voltages (-2 cm2/V ·s. The frequency-dependence and hysteresis effect are observed in the C-V measurements for the metal-polymer-oxide-silicon (MPOS) capacitors,and discussed in detail to understand their physical mechanism.
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Keywords:
- polymer thin-film transistors /
- poly(3-hexylthiophene) /
- field-effect mobility /
- high-k gate dielectric
[1] Ryu G S,Choe K B,Song C K 2006 Thin Solid Films 514 302
[2] Torsi L,Tafuri A,Cioffi N,Gallazzi M C,Sassella A,Sabbatini L,Zambonin P G 2003 Sensor Actuat. B 93 257
[3] Zou J H,Lan L F,Xu R X,Yang W,Peng J B 2010 Acta Phys. Sin. 59 1275 (in Chinese) [邹建华、兰林峰、徐瑞霞、杨 伟、彭俊彪 2010 物理学报 59 1275]
[4] Dunn L,Basu D,Wang L,Dodabalapur A,2006 Appl. Phys. Lett. 88 063507
[5] Tao C L,Zhang X H,Dong M J,Liu Y Y,Sun S,Ou G P,Zhang F J,Zhang H L 2008 Chin. Phys. B 17 281
[6] Yuan G C,Xu Z,Zhao S L,Zhang F J,Jiang W W,Huang J Z,Song D D,Zhu H N,Huang J Y,Xu X R 2008 Acta Phys. Sin. 57 5911 (in Chinese) [袁广才、徐 征、赵谡玲、张福俊、姜薇薇、黄金昭、宋丹丹、朱海娜、黄金英、徐叙瑢 2008 物理学报 57 5911]
[7] Sirringhaus H,Tessler N,Friend R H 1999 Synth. Met. 102 857
[8] Liu Y R,Wang Z X,Yu J L,Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣、王智欣、虞佳乐、徐海红 2009 物理学报 58 8566]
[9] Cho S,Lee K,Yuen J,Wang G M,Moses D,Heeger A J,Surin M,Lazzaroni R 2006 J. Appl. Phys. 100 14503
[10] Tian X Y,Xu Z,Zhao S L,Zhang F J,Xu X R,Yuan G C Li J,Sun Q J,Wang Y 2009 Chin. Phys. B 18 5078
[11] Kim J M,Lee J W,Kim J K,Ju B K,Kim J S,Lee Y H,Oh M H 2004 Appl. Phys. Lett. 85 6368
[12] Hu W,Zhao Y,Hou J Y,Ma C S,Liu S Y 2007 Microelectron. J. 38 632
[13] Bartic C,Jansen H,Campitelli A,Borghs S 2002 Org. Electron. 3 65
[14] Wang G M,Moses D,Heeger A J 2004 J. Appl. Phys. 95 316
[15] Majewski L A,Schroeder R,Grell M,Glarvey P A,Turner M L 2004 J. Appl. Phys. 96 5781
[16] Raval H N,Tiwari S P,Navan R R,Mhaisalkar,Rao V R 2009 IEEE Electron Device Lett. 30 484
[17] Nicollian E H,Brews J R 1982 MOS (Metal Oxide Semicon-ductor) Physics and Technology (New York:John Wiley and Sons,Inc.) p223
[18] Schroder D K 1998 Semiconductor Material and Device Character-ization,2nd Edition (New York:John Wiley and Sons,Inc.) p376
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[1] Ryu G S,Choe K B,Song C K 2006 Thin Solid Films 514 302
[2] Torsi L,Tafuri A,Cioffi N,Gallazzi M C,Sassella A,Sabbatini L,Zambonin P G 2003 Sensor Actuat. B 93 257
[3] Zou J H,Lan L F,Xu R X,Yang W,Peng J B 2010 Acta Phys. Sin. 59 1275 (in Chinese) [邹建华、兰林峰、徐瑞霞、杨 伟、彭俊彪 2010 物理学报 59 1275]
[4] Dunn L,Basu D,Wang L,Dodabalapur A,2006 Appl. Phys. Lett. 88 063507
[5] Tao C L,Zhang X H,Dong M J,Liu Y Y,Sun S,Ou G P,Zhang F J,Zhang H L 2008 Chin. Phys. B 17 281
[6] Yuan G C,Xu Z,Zhao S L,Zhang F J,Jiang W W,Huang J Z,Song D D,Zhu H N,Huang J Y,Xu X R 2008 Acta Phys. Sin. 57 5911 (in Chinese) [袁广才、徐 征、赵谡玲、张福俊、姜薇薇、黄金昭、宋丹丹、朱海娜、黄金英、徐叙瑢 2008 物理学报 57 5911]
[7] Sirringhaus H,Tessler N,Friend R H 1999 Synth. Met. 102 857
[8] Liu Y R,Wang Z X,Yu J L,Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣、王智欣、虞佳乐、徐海红 2009 物理学报 58 8566]
[9] Cho S,Lee K,Yuen J,Wang G M,Moses D,Heeger A J,Surin M,Lazzaroni R 2006 J. Appl. Phys. 100 14503
[10] Tian X Y,Xu Z,Zhao S L,Zhang F J,Xu X R,Yuan G C Li J,Sun Q J,Wang Y 2009 Chin. Phys. B 18 5078
[11] Kim J M,Lee J W,Kim J K,Ju B K,Kim J S,Lee Y H,Oh M H 2004 Appl. Phys. Lett. 85 6368
[12] Hu W,Zhao Y,Hou J Y,Ma C S,Liu S Y 2007 Microelectron. J. 38 632
[13] Bartic C,Jansen H,Campitelli A,Borghs S 2002 Org. Electron. 3 65
[14] Wang G M,Moses D,Heeger A J 2004 J. Appl. Phys. 95 316
[15] Majewski L A,Schroeder R,Grell M,Glarvey P A,Turner M L 2004 J. Appl. Phys. 96 5781
[16] Raval H N,Tiwari S P,Navan R R,Mhaisalkar,Rao V R 2009 IEEE Electron Device Lett. 30 484
[17] Nicollian E H,Brews J R 1982 MOS (Metal Oxide Semicon-ductor) Physics and Technology (New York:John Wiley and Sons,Inc.) p223
[18] Schroder D K 1998 Semiconductor Material and Device Character-ization,2nd Edition (New York:John Wiley and Sons,Inc.) p376
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