搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

柔性有机场效应晶体管研究进展

董京 柴玉华 赵跃智 石巍巍 郭玉秀 仪明东 解令海 黄维

引用本文:
Citation:

柔性有机场效应晶体管研究进展

董京, 柴玉华, 赵跃智, 石巍巍, 郭玉秀, 仪明东, 解令海, 黄维

The progress of flexible organic field-effect transistors

Dong Jing, Chai Yu-Hua, Zhao Yue-Zhi, Shi Wei-Wei, Guo Yu-Xiu, Yi Ming-Dong, Xie Ling-Hai, Huang Wei
PDF
导出引用
  • 柔性有机场效应晶体管具有可折叠、质量轻、低成本等优点,在柔性显示、柔性传感器、柔性射频标签和柔性集成电路等方面显示了广阔的应用前景.本文在介绍柔性有机场效应 晶体管最新研究进展的基础上, 总结了柔性有机场效应晶体管的器件结构和柔性有机场效应晶体管所使用的衬底材料、 栅绝缘层材料、有源层材料及电极材料, 阐述了柔性有机场效应晶体管的制备工艺, 并讨论了不同的弯曲方式对柔性有机场效应晶体管性能的影响, 最后总结和展望了柔性有机场效应晶体管的应用领域.
    Flexible organic field-effect transistors (OFETs) have revealed wide prospect in their applications to the flexible display, flexible sensor, flexible radio frequency tag and flexible integrated circuit due to their advantages such as foldability, light weight of device and low-cost fabrication process. On the basis of the introduction of advancement in the study of flexible OFETs in this paper, a broad overview about device structures of flexible OFETs, substrate materials, gate insulating layer materials, active layer materials and electrode materials used for flexible OFETs is given, the fabricating process of flexible OFETs is explained, and the effect of bending pattern on the performance of flexible OFETs is discussed. Finally, the application areas of flexible OFETs are summarized and prospected.
    • 基金项目: 国家重点基础研究发展计划(批准号:2009CB930600,2012CB933301,2012CB723402)、国家自然科学基金(批准号:61204095,21144004)、中国博士后科学基金(批准号:20070410883)、教育部博士点基金(批准号:20113223120003)、江苏省自然科学基金(批准号:BK2012431,BK2011761,SBK201122680)、黑龙江省博士后基金(批准号:BH-Z07233)、江苏省高校自然科学基础研究面上项目(批准号:11KJB510017)和南京邮电大学人才科研启动基金(批准号:NY211022,NY210030)资助的课题.
    • Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2009CB930600, 2012CB933301, 2012CB723402), the National Natural Science Foundation of China (Grant Nos. 61204095, 21144004), the National Science Foundation for Post-Doctoral Scientists of China (Grant No. 20070410883), the Key Project of Chinese Ministry of Education, China (Grant No. 20113223120003), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2012431, BK2011761, SBK201122680), the Jiangsu Planned Projects for Postdoctoral Research, China (Grant No. BH-Z07233), the Natural Science Foundation of the Education Committee of Jiangsu Province, China (Grant No. 11KJB510017), and the Scientific Research Starting Foundation of Nanjing University of Posts and Telecommunications, China (Grant Nos. NY211022, NY210002, NY210030).
    [1]

    Zhang F, Funahashi M, Tamaoki N 2010 Org. Electron. 11 363

    [2]

    Kawasaki N, Kalb W L, Mathis T, Kaji Y, Mitsuhashi R, Okamoto H, Sugawara Y, Fujiwara A, Kubozono Y, Batlogg B 2010 Appl. Phys. Lett. 96 113305

    [3]

    Park Y, Han K S, Lee B H, Cho S, Lee K H, Im S, Sung M M 2011 Org. Electron. 12 348

    [4]

    Backlund T G, Sandberg H G O, Osterbacka R, Stubb H, Makela T, Jussila S 2005 Synthetic. Met. 148 87

    [5]

    Gburek B, Wagner V 2010 Org. Electron. 11 814

    [6]

    Uno M, Nakayama K, Soeda J, Hirose Y, Miwa K, Uemura T, Nakao A, Takimiya K, Takeya J 2011 Adv. Mater. 23 3047

    [7]

    Lim H, Bae C M, Kim Y K, Park C H, Cho W J, Ha C S 2003 Synthetic. Met. 135 49

    [8]

    Lim H, Cho W J, Ha C S, Ando S, Kim Y K, Park C H, Lee K 2002 Adv. Mater. 14 1275

    [9]

    Roberts M E, Mannsfeld S C B, Stoltenberg R M, Bao Z 2009 Org. Electron. 10 377

    [10]

    Tan H S, Mathews N, Cahyadi T, Zhu F R, Mhaisalkar S G 2009 Appl. Phys. Lett. 94 263303

    [11]

    Dimitrakopoulos C D, Purushothaman S, Kymissis J, Callegari A, Shaw J M 1999 Science 283 822

    [12]

    Chang M F, Lee P T, McAlister S P, Chin A 2009 IEEE Electron Dev. Lett. 30 133

    [13]

    Tan H S, Cahyadi T, Wang Z B, Lohani A, Tsakadze Z, Zhang S, Zhu F R, Mhaisalkar S G 2008 IEEE Electron Dev. Lett. 29 698

    [14]

    Briseno A L, Tseng R J, Ling M M, Falcao E H L, Yang Y, Wudl F, Bao Z 2006 Adv. Mater. 18 2320

    [15]

    Sung C F, Kekuda D, Chu L F, Lee Y Z, Chen F C, Wu M C, Chu C W 2009 Adv. Mater. 21 4845

    [16]

    Chang J W, Wang C G, Huang C Y, Tsai T D, Guo T F, Wen T C 2011 Adv. Mater. 23 4077

    [17]

    Kim B J, Jang H, Lee S K, Hong B H, Ahn J H, Cho J H 2010 Nano Lett. 10 3464

    [18]

    Wang C H, Hsieh C Y, Hwang J C 2011 Adv. Mater. 23 1630

    [19]

    Hwang D K, Fuentes-Hernandez C, Kim J B, Potscavage Jr W J, Kippelen B 2011 Org. Electron. 12 1108

    [20]

    Zirkl M, Haase A, Fian A, Schon H, Sommer C, Jakopic G, Leising G, Stadlober B, Graz I, Gaar N, Schwodiauer R, Bauer-Gogonea S, Bauer S 2007 Adv. Mater. 19 2241

    [21]

    Sidler K, Cvetkovic N V, Savu V, Tsamados D, Ionescu A M, Brugger J 2010 Sensor. Actua. {A-Phys.} 162 155

    [22]

    Lee W H, Park J, Sim S H, Jo S B, Kim K S, Hong B H, Cho K 2011 Adv. Mater. 23 1752

    [23]

    Liu P, Wu Y L, Li Y N, Ong B S, Zhu S P 2006 J. Am. Chem. Soc. 128 4554

    [24]

    Graz I M, Lacour S P 2009 Appl. Phys. Lett. 95 243305

    [25]

    Zhao Y H, Dong G F, Wang L D, Qiu Y 2007 Chin. Phys. Lett. 24 1664

    [26]

    Zyung T, Kim S H, Chu H Y, Lee J H, Lim S C, Lee J I, Oh J 2005 Proc. IEEE 93 1265

    [27]

    Liu Z, Oh J H, Roberts M E, Wei P, Paul B C, Okajima M, Nishi Y, Bao Z 2009 Appl. Phys. Lett. 94 203301

    [28]

    Liu Y R, Wang Z X, Yu J L, Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣, 王智欣, 虞佳乐, 徐海红2009 物理学报 58 8566]

    [29]

    Sekitani T, Zschieschang U, Klauk H, Someya T 2010 Nat. Mater. 9 1015

    [30]

    Zschieschang U, Ante F, Yamamoto T, Takimiya K, Kuwabara H, Ikeda M, Sekitani T, Someya T, Kern K, Klauk H 2010 Adv. Mater. 22 982

    [31]

    Fujisaki Y, Nakajima Y, Kumaki D, Yamamoto T, Tokito S, Kono T, Nishida J I, Yamashita Y 2010 Appl. Phys. Lett. 97 133303

    [32]

    Bradley K, Gabriel J C P, Gruner G 2003 Nano Lett. 3 1353

    [33]

    Hur S H, Park O O, Rogers J A 2005 Appl. Phys. Lett. 86 243502

    [34]

    Cao Q, Hur S H, Zhu Z T, Sun Y G, Wang C J, Meitl M A, Shim M, Rogers J A 2006 Adv. Mater. 18 304

    [35]

    Jiang C X, Yang X Y, Zhao K, Wu X M, Yang L Y, Cheng X M, Wei J, Yin S G 2011 Chin. Phys. Lett. 28 127203

    [36]

    Suganuma K, Watanabe S, Gotou T, Ueno K 2011 Appl. Phys. Express 4 021603

    [37]

    Huang J, Hines D R, Jung B J, Bronsgeest M S, Tunnell A, Ballarotto V, Katz H E, Fuhrer M S, Williams E D, Cumings J 2011 Org. Electron. 12 1471

    [38]

    Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488

    [39]

    Song K, Noh J, Jun T, Jung Y, Kang H Y, Moon J 2010 Adv. Mater. 22 4308

    [40]

    Lee W H, Lim J A, Kwak D, Cho J H, Lee H S, Choi H H, Cho K 2009 Adv. Mater. 21 4243

    [41]

    Seol Y G, Lee N E, Park S H, Bae J Y 2008 Org. Electron. 9 413

    [42]

    Smith J, Hamilton R, McCulloch I, Heeney M, Anthony J E, Bradley D D C, Anthopoulos T D 2009 Synthetic. Met. 159 2365

    [43]

    Sun Q J, Xu Z, Zhao S L, Zhang F J, Gao L Y 2011 Chin. Phys. B 20 017306

    [44]

    Chen Y, Xu Y, Zhao K, Wan X, Deng J, Yan W 2010 Nano Res. 3 714

    [45]

    Minemawari H, Yamada T, Matsui H, Tsutsumi J, Haas S, Chiba R, Kumai R, Hasegawa T 2011 Nature 475 364

    [46]

    Baldo M, Deutsch M, Burrows P, Gossenberger H, Gerstenberg M, Ban V, Forrest S 1998 Adv. Mater. 10 1505

    [47]

    Shtein M, Gossenberger H F, Benziger J B, Forrest S R 2001 J. Appl. Phys. 89 1470

    [48]

    Crone B, Dodabalapur A, Lin Y Y, Filas R W, Bao Z, LaDuca A, Sarpeshkar R, Katz H E, Li W 2000 Nature 403 521

    [49]

    Lovinger A J, Rothberg L J 1996 J. Mater. Res. 11 1581

    [50]

    Xu G F, Bao Z N, Groves J T 1998 Abstr. Paper Am. Chem. Soc. 216 U802

    [51]

    Minari T, Liu C, Kano M, Tsukagoshi K 2012 Adv. Mater. 24 299

    [52]

    Dimitrakopoulos C D, Mascaro D J 2001 IBM J. Res. Dev. 45 11

    [53]

    Yin Z, Huang Y, Bu N, Wang X, Xiong Y 2010 Chin. Sci. Bull. 55 3383

    [54]

    Paloheimo J, Kuivalainen P, Stubb H, Vuorimaa E, Ylilahti P 1990 Appl. Phys. Lett. 56 1157

    [55]

    Yoon B, Ham D Y, Yarimaga O, An H, Lee C W, Kim J M 2011 Adv. Mater. 23 5492

    [56]

    Shekar B C, Lee J Y, Rhee S W 2004 Korean J. Chem. Eng. 21 267

    [57]

    Forrest S R 2004 Nature 428 911

    [58]

    Seol Y G, Noh H Y, Lee S S, Ahn J H, Lee N E 2008 Appl. Phys. Lett. 93 013305

    [59]

    Wang H, Li C H, Wang L J, Wang H B, Yan D H 2010 Chin. Phys. Lett. 27 28502

    [60]

    Kodaira T, Hirabayashi S, Komatsu Y, Miyasaka M, Kawai H, Nebashi S, Inoue S, Shimoda T 2008 J. Soc. Inf. Display 16 107

    [61]

    Gleskova H, Wagner S, Soboyejo W, Suo Z 2002 J. Appl. Phys. 92 6224

    [62]

    Han L, Song K, Mandlik P, Wagner S 2010 Appl. Phys. Lett. 96 042111

    [63]

    Sekitani T, Iba S, Kato Y, Noguchi Y, Someya T, Sakurai T 2005 Appl. Phys. Lett. 87 173502

    [64]

    Jedaa A, Halik M 2009 Appl. Phys. Lett. 95 103309

    [65]

    Qiu Y, Hu Y C, Dong G F, Wang L D, Xie J F, Ma Y N 2003 Chin. Sci. Bull. 48 1554

    [66]

    Gelinck G, Heremans P, Nomoto K, Anthopoulos T D 2010 Adv. Mater. 22 3778

    [67]

    Gelinck G H, Huitema H E A, van Veenendaal E, Cantatore E, Schrijnemakers L, van der Putten J, Geuns T C T, Beenhakkers M, Giesbers J B, Huisman B H, Meijer E J, Benito E M, Touwslager F J, Marsman A W, van Rens B J E, de Leeuw D M 2004 Nat. Mater. 3 106

    [68]

    Sekitani T, Noguchi Y, Hata K, Fukushima T, Aida T, Someya T 2008 Science 321 1468

    [69]

    Zhou L, Wanga A, Wu S C, Sun J, Park S, Jackson T N 2006 Appl. Phys. Lett. 88 083502

    [70]

    Mannsfeld S C B, Tee B C K, Stoltenberg R M, Chen C V H H, Barman S, Muir B V O, Sokolov A N, Reese C, Bao Z 2010 Nat. Mater. 9 859

    [71]

    Baude P F, Ender D A, Haase M A, Kelley T W, Muyres D V, Theiss S D 2003 Appl. Phys. Lett. 82 3964

    [72]

    Klauk H, Zschieschang U, Pflaum J, Halik M 2007 Nature 445 745

    [73]

    Yan H, Zheng Y, Blache R, Newman C, Lu S, Woerle J, Facchetti A 2008 Adv. Mater. 20 3393

    [74]

    Huitema H E A, Gelinck G H, van der Putten J, Kuijk K E, Hart C M, Cantatore E, Herwig P T, van Breemen A, de Leeuw D M 2001 Nature 414 599

    [75]

    Rogers J A, Bao Z 2002 J. Polym. Sci. Pol. Chem. 40 3327

    [76]

    Rogers J A, Bao Z, Baldwin K, Dodabalapur A, Crone B, Raju V R, Kuck V, Katz H, Amundson K, Ewing J, Drzaic P 2001 Proc. Natl. Acad. Sci. USA 98 4835

    [77]

    Jain K, Klosner M, Zemel M, Raghunandan S 2005 Proc. IEEE 93 1500

    [78]

    Chen Y, Au J, Kazlas P, Ritenour A, Gates H, McCreary M 2003 Nature 423 136

    [79]

    Someya T, Kawaguchi H, Sakurai T 2004 2004 IEEE International Solid-State Circuits Conference, Digest of Technical Papers pp288--289

    [80]

    Someya T, Sekitani T, Iba S, Kato Y, Kawaguchi H, Sakurai T 2004 Proc. Natl. Acad. Sci. USA 101 9966

    [81]

    Someya T, Pal B, Huang J, Katz H E 2008 MRS Bull. 33 690

    [82]

    Subramanian V, Frechet J M J, Chang P C, Huang D C, Lee J B, Molesa S E, Murphy A R, Redinger D R 2005 Proc. IEEE 93 1330

    [83]

    Drury C J, Mutsaers C M J, Hart C M, Matters M, de Leeuw D M 1998 Appl. Phys. Lett. 73 108

    [84]

    Kane M G, Campi J, Hammond M S, Cuomo F P, Greening B, Sheraw C D, Nichols J A, Gundlach D J, Huang J R, Kuo C C, Jia L, Klauk H, Jackson T N 2000 IEEE Electron Dev. Lett. 21 534

  • [1]

    Zhang F, Funahashi M, Tamaoki N 2010 Org. Electron. 11 363

    [2]

    Kawasaki N, Kalb W L, Mathis T, Kaji Y, Mitsuhashi R, Okamoto H, Sugawara Y, Fujiwara A, Kubozono Y, Batlogg B 2010 Appl. Phys. Lett. 96 113305

    [3]

    Park Y, Han K S, Lee B H, Cho S, Lee K H, Im S, Sung M M 2011 Org. Electron. 12 348

    [4]

    Backlund T G, Sandberg H G O, Osterbacka R, Stubb H, Makela T, Jussila S 2005 Synthetic. Met. 148 87

    [5]

    Gburek B, Wagner V 2010 Org. Electron. 11 814

    [6]

    Uno M, Nakayama K, Soeda J, Hirose Y, Miwa K, Uemura T, Nakao A, Takimiya K, Takeya J 2011 Adv. Mater. 23 3047

    [7]

    Lim H, Bae C M, Kim Y K, Park C H, Cho W J, Ha C S 2003 Synthetic. Met. 135 49

    [8]

    Lim H, Cho W J, Ha C S, Ando S, Kim Y K, Park C H, Lee K 2002 Adv. Mater. 14 1275

    [9]

    Roberts M E, Mannsfeld S C B, Stoltenberg R M, Bao Z 2009 Org. Electron. 10 377

    [10]

    Tan H S, Mathews N, Cahyadi T, Zhu F R, Mhaisalkar S G 2009 Appl. Phys. Lett. 94 263303

    [11]

    Dimitrakopoulos C D, Purushothaman S, Kymissis J, Callegari A, Shaw J M 1999 Science 283 822

    [12]

    Chang M F, Lee P T, McAlister S P, Chin A 2009 IEEE Electron Dev. Lett. 30 133

    [13]

    Tan H S, Cahyadi T, Wang Z B, Lohani A, Tsakadze Z, Zhang S, Zhu F R, Mhaisalkar S G 2008 IEEE Electron Dev. Lett. 29 698

    [14]

    Briseno A L, Tseng R J, Ling M M, Falcao E H L, Yang Y, Wudl F, Bao Z 2006 Adv. Mater. 18 2320

    [15]

    Sung C F, Kekuda D, Chu L F, Lee Y Z, Chen F C, Wu M C, Chu C W 2009 Adv. Mater. 21 4845

    [16]

    Chang J W, Wang C G, Huang C Y, Tsai T D, Guo T F, Wen T C 2011 Adv. Mater. 23 4077

    [17]

    Kim B J, Jang H, Lee S K, Hong B H, Ahn J H, Cho J H 2010 Nano Lett. 10 3464

    [18]

    Wang C H, Hsieh C Y, Hwang J C 2011 Adv. Mater. 23 1630

    [19]

    Hwang D K, Fuentes-Hernandez C, Kim J B, Potscavage Jr W J, Kippelen B 2011 Org. Electron. 12 1108

    [20]

    Zirkl M, Haase A, Fian A, Schon H, Sommer C, Jakopic G, Leising G, Stadlober B, Graz I, Gaar N, Schwodiauer R, Bauer-Gogonea S, Bauer S 2007 Adv. Mater. 19 2241

    [21]

    Sidler K, Cvetkovic N V, Savu V, Tsamados D, Ionescu A M, Brugger J 2010 Sensor. Actua. {A-Phys.} 162 155

    [22]

    Lee W H, Park J, Sim S H, Jo S B, Kim K S, Hong B H, Cho K 2011 Adv. Mater. 23 1752

    [23]

    Liu P, Wu Y L, Li Y N, Ong B S, Zhu S P 2006 J. Am. Chem. Soc. 128 4554

    [24]

    Graz I M, Lacour S P 2009 Appl. Phys. Lett. 95 243305

    [25]

    Zhao Y H, Dong G F, Wang L D, Qiu Y 2007 Chin. Phys. Lett. 24 1664

    [26]

    Zyung T, Kim S H, Chu H Y, Lee J H, Lim S C, Lee J I, Oh J 2005 Proc. IEEE 93 1265

    [27]

    Liu Z, Oh J H, Roberts M E, Wei P, Paul B C, Okajima M, Nishi Y, Bao Z 2009 Appl. Phys. Lett. 94 203301

    [28]

    Liu Y R, Wang Z X, Yu J L, Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣, 王智欣, 虞佳乐, 徐海红2009 物理学报 58 8566]

    [29]

    Sekitani T, Zschieschang U, Klauk H, Someya T 2010 Nat. Mater. 9 1015

    [30]

    Zschieschang U, Ante F, Yamamoto T, Takimiya K, Kuwabara H, Ikeda M, Sekitani T, Someya T, Kern K, Klauk H 2010 Adv. Mater. 22 982

    [31]

    Fujisaki Y, Nakajima Y, Kumaki D, Yamamoto T, Tokito S, Kono T, Nishida J I, Yamashita Y 2010 Appl. Phys. Lett. 97 133303

    [32]

    Bradley K, Gabriel J C P, Gruner G 2003 Nano Lett. 3 1353

    [33]

    Hur S H, Park O O, Rogers J A 2005 Appl. Phys. Lett. 86 243502

    [34]

    Cao Q, Hur S H, Zhu Z T, Sun Y G, Wang C J, Meitl M A, Shim M, Rogers J A 2006 Adv. Mater. 18 304

    [35]

    Jiang C X, Yang X Y, Zhao K, Wu X M, Yang L Y, Cheng X M, Wei J, Yin S G 2011 Chin. Phys. Lett. 28 127203

    [36]

    Suganuma K, Watanabe S, Gotou T, Ueno K 2011 Appl. Phys. Express 4 021603

    [37]

    Huang J, Hines D R, Jung B J, Bronsgeest M S, Tunnell A, Ballarotto V, Katz H E, Fuhrer M S, Williams E D, Cumings J 2011 Org. Electron. 12 1471

    [38]

    Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488

    [39]

    Song K, Noh J, Jun T, Jung Y, Kang H Y, Moon J 2010 Adv. Mater. 22 4308

    [40]

    Lee W H, Lim J A, Kwak D, Cho J H, Lee H S, Choi H H, Cho K 2009 Adv. Mater. 21 4243

    [41]

    Seol Y G, Lee N E, Park S H, Bae J Y 2008 Org. Electron. 9 413

    [42]

    Smith J, Hamilton R, McCulloch I, Heeney M, Anthony J E, Bradley D D C, Anthopoulos T D 2009 Synthetic. Met. 159 2365

    [43]

    Sun Q J, Xu Z, Zhao S L, Zhang F J, Gao L Y 2011 Chin. Phys. B 20 017306

    [44]

    Chen Y, Xu Y, Zhao K, Wan X, Deng J, Yan W 2010 Nano Res. 3 714

    [45]

    Minemawari H, Yamada T, Matsui H, Tsutsumi J, Haas S, Chiba R, Kumai R, Hasegawa T 2011 Nature 475 364

    [46]

    Baldo M, Deutsch M, Burrows P, Gossenberger H, Gerstenberg M, Ban V, Forrest S 1998 Adv. Mater. 10 1505

    [47]

    Shtein M, Gossenberger H F, Benziger J B, Forrest S R 2001 J. Appl. Phys. 89 1470

    [48]

    Crone B, Dodabalapur A, Lin Y Y, Filas R W, Bao Z, LaDuca A, Sarpeshkar R, Katz H E, Li W 2000 Nature 403 521

    [49]

    Lovinger A J, Rothberg L J 1996 J. Mater. Res. 11 1581

    [50]

    Xu G F, Bao Z N, Groves J T 1998 Abstr. Paper Am. Chem. Soc. 216 U802

    [51]

    Minari T, Liu C, Kano M, Tsukagoshi K 2012 Adv. Mater. 24 299

    [52]

    Dimitrakopoulos C D, Mascaro D J 2001 IBM J. Res. Dev. 45 11

    [53]

    Yin Z, Huang Y, Bu N, Wang X, Xiong Y 2010 Chin. Sci. Bull. 55 3383

    [54]

    Paloheimo J, Kuivalainen P, Stubb H, Vuorimaa E, Ylilahti P 1990 Appl. Phys. Lett. 56 1157

    [55]

    Yoon B, Ham D Y, Yarimaga O, An H, Lee C W, Kim J M 2011 Adv. Mater. 23 5492

    [56]

    Shekar B C, Lee J Y, Rhee S W 2004 Korean J. Chem. Eng. 21 267

    [57]

    Forrest S R 2004 Nature 428 911

    [58]

    Seol Y G, Noh H Y, Lee S S, Ahn J H, Lee N E 2008 Appl. Phys. Lett. 93 013305

    [59]

    Wang H, Li C H, Wang L J, Wang H B, Yan D H 2010 Chin. Phys. Lett. 27 28502

    [60]

    Kodaira T, Hirabayashi S, Komatsu Y, Miyasaka M, Kawai H, Nebashi S, Inoue S, Shimoda T 2008 J. Soc. Inf. Display 16 107

    [61]

    Gleskova H, Wagner S, Soboyejo W, Suo Z 2002 J. Appl. Phys. 92 6224

    [62]

    Han L, Song K, Mandlik P, Wagner S 2010 Appl. Phys. Lett. 96 042111

    [63]

    Sekitani T, Iba S, Kato Y, Noguchi Y, Someya T, Sakurai T 2005 Appl. Phys. Lett. 87 173502

    [64]

    Jedaa A, Halik M 2009 Appl. Phys. Lett. 95 103309

    [65]

    Qiu Y, Hu Y C, Dong G F, Wang L D, Xie J F, Ma Y N 2003 Chin. Sci. Bull. 48 1554

    [66]

    Gelinck G, Heremans P, Nomoto K, Anthopoulos T D 2010 Adv. Mater. 22 3778

    [67]

    Gelinck G H, Huitema H E A, van Veenendaal E, Cantatore E, Schrijnemakers L, van der Putten J, Geuns T C T, Beenhakkers M, Giesbers J B, Huisman B H, Meijer E J, Benito E M, Touwslager F J, Marsman A W, van Rens B J E, de Leeuw D M 2004 Nat. Mater. 3 106

    [68]

    Sekitani T, Noguchi Y, Hata K, Fukushima T, Aida T, Someya T 2008 Science 321 1468

    [69]

    Zhou L, Wanga A, Wu S C, Sun J, Park S, Jackson T N 2006 Appl. Phys. Lett. 88 083502

    [70]

    Mannsfeld S C B, Tee B C K, Stoltenberg R M, Chen C V H H, Barman S, Muir B V O, Sokolov A N, Reese C, Bao Z 2010 Nat. Mater. 9 859

    [71]

    Baude P F, Ender D A, Haase M A, Kelley T W, Muyres D V, Theiss S D 2003 Appl. Phys. Lett. 82 3964

    [72]

    Klauk H, Zschieschang U, Pflaum J, Halik M 2007 Nature 445 745

    [73]

    Yan H, Zheng Y, Blache R, Newman C, Lu S, Woerle J, Facchetti A 2008 Adv. Mater. 20 3393

    [74]

    Huitema H E A, Gelinck G H, van der Putten J, Kuijk K E, Hart C M, Cantatore E, Herwig P T, van Breemen A, de Leeuw D M 2001 Nature 414 599

    [75]

    Rogers J A, Bao Z 2002 J. Polym. Sci. Pol. Chem. 40 3327

    [76]

    Rogers J A, Bao Z, Baldwin K, Dodabalapur A, Crone B, Raju V R, Kuck V, Katz H, Amundson K, Ewing J, Drzaic P 2001 Proc. Natl. Acad. Sci. USA 98 4835

    [77]

    Jain K, Klosner M, Zemel M, Raghunandan S 2005 Proc. IEEE 93 1500

    [78]

    Chen Y, Au J, Kazlas P, Ritenour A, Gates H, McCreary M 2003 Nature 423 136

    [79]

    Someya T, Kawaguchi H, Sakurai T 2004 2004 IEEE International Solid-State Circuits Conference, Digest of Technical Papers pp288--289

    [80]

    Someya T, Sekitani T, Iba S, Kato Y, Kawaguchi H, Sakurai T 2004 Proc. Natl. Acad. Sci. USA 101 9966

    [81]

    Someya T, Pal B, Huang J, Katz H E 2008 MRS Bull. 33 690

    [82]

    Subramanian V, Frechet J M J, Chang P C, Huang D C, Lee J B, Molesa S E, Murphy A R, Redinger D R 2005 Proc. IEEE 93 1330

    [83]

    Drury C J, Mutsaers C M J, Hart C M, Matters M, de Leeuw D M 1998 Appl. Phys. Lett. 73 108

    [84]

    Kane M G, Campi J, Hammond M S, Cuomo F P, Greening B, Sheraw C D, Nichols J A, Gundlach D J, Huang J R, Kuo C C, Jia L, Klauk H, Jackson T N 2000 IEEE Electron Dev. Lett. 21 534

  • [1] 李雨凡, 薛文清, 李玉超, 战艳虎, 谢倩, 李艳凯, 查俊伟. 三明治结构柔性储能电介质材料研究进展. 物理学报, 2024, 73(2): 027702. doi: 10.7498/aps.73.20230614
    [2] 王辉, 郑德旭, 姜箫, 曹越先, 杜敏永, 王开, 刘生忠, 张春福. 基于协同钝化策略制备高性能柔性钙钛矿太阳能电池. 物理学报, 2024, 73(7): 078401. doi: 10.7498/aps.73.20231846
    [3] 蒋子寒, 柯硕, 祝影, 朱一新, 朱力, 万昌锦, 万青. 柔性神经形态晶体管及其仿生感知应用. 物理学报, 2022, 71(14): 147301. doi: 10.7498/aps.71.20220308
    [4] 陈乐迪, 范仁浩, 刘雨, 唐贡惠, 马中丽, 彭茹雯, 王牧. 基于柔性超构材料宽带调控太赫兹波的偏振态. 物理学报, 2022, 71(18): 187802. doi: 10.7498/aps.71.20220801
    [5] 玄鑫淼, 王加恒, 毛彦琦, 叶利娟, 张红, 李泓霖, 熊元强, 范嗣强, 孔春阳, 李万俊. 基于云母衬底生长的非晶Ga2O3柔性透明日盲紫外光探测器研究. 物理学报, 2021, 70(23): 238502. doi: 10.7498/aps.70.20211039
    [6] 张雅男, 詹楠, 邓玲玲, 陈淑芬. 利用银纳米立方增强效率的多层溶液加工白光有机发光二极管. 物理学报, 2020, 69(4): 047801. doi: 10.7498/aps.69.20191526
    [7] 谈溥川, 赵超超, 樊瑜波, 李舟. 自驱动柔性生物医学传感器的研究进展. 物理学报, 2020, 69(17): 178704. doi: 10.7498/aps.69.20201012
    [8] 蓝顺, 潘豪, 林元华. 柔性无机铁电薄膜的制备及其应用. 物理学报, 2020, 69(21): 217708. doi: 10.7498/aps.69.20201365
    [9] 熊开欣, 席昆, 鲍磊, 张忠良, 谭志杰. 脱氧核糖核酸柔性的分子动力学模拟:Amber bsc1和bsc0力场的对比研究. 物理学报, 2018, 67(10): 108701. doi: 10.7498/aps.67.20180326
    [10] 李卫胜, 周健, 王瀚宸, 汪树贤, 于志浩, 黎松林, 施毅, 王欣然. 二维半导体过渡金属硫化物的逻辑集成器件. 物理学报, 2017, 66(21): 218503. doi: 10.7498/aps.66.218503
    [11] 范昌君, 王瑞雪, 刘振, 雷勇, 李国庆, 熊祖洪, 杨晓晖. 基于溶液加工小分子材料发光层的有机-无机复合发光器件. 物理学报, 2015, 64(16): 167801. doi: 10.7498/aps.64.167801
    [12] 刘海文, 朱爽爽, 文品, 覃凤, 任宝平, 肖湘, 侯新宇. 基于发卡式开口谐振环的柔性双频带超材料. 物理学报, 2015, 64(3): 038101. doi: 10.7498/aps.64.038101
    [13] 柴玉华, 郭玉秀, 卞伟, 李雯, 杨涛, 仪明东, 范曲立, 解令海, 黄维. 柔性有机非易失性场效应晶体管存储器的研究进展. 物理学报, 2014, 63(2): 027302. doi: 10.7498/aps.63.027302
    [14] 邓舒鹏, 李文萃, 黄文彬, 刘永刚, 彭增辉, 鲁兴海, 宣丽. 基于全息聚合物分散液晶的有机二维光子晶体激光器的研究. 物理学报, 2011, 60(8): 086103. doi: 10.7498/aps.60.086103
    [15] 孙钦军, 徐征, 赵谡玲, 张福俊, 高利岩, 田雪雁, 王永生. 有机薄膜晶体管中接触效应的研究. 物理学报, 2010, 59(11): 8125-8130. doi: 10.7498/aps.59.8125
    [16] 邹建华, 兰林锋, 徐瑞霞, 杨伟, 彭俊彪. 有机薄膜晶体管驱动聚合物发光二极管研究. 物理学报, 2010, 59(2): 1275-1281. doi: 10.7498/aps.59.1275
    [17] 杨盛谊, 杜文树, 齐洁茹, 娄志东. 基于NPB的垂直构型有机发光晶体管的光电特性研究. 物理学报, 2009, 58(5): 3427-3432. doi: 10.7498/aps.58.3427
    [18] 刘玉荣, 王智欣, 虞佳乐, 徐海红. 高迁移率聚合物薄膜晶体管. 物理学报, 2009, 58(12): 8566-8570. doi: 10.7498/aps.58.8566
    [19] 聂 海, 张 波, 唐先忠. 聚合物掺杂有机小分子发光二极管的电致发光与杂质陷阱效应. 物理学报, 2007, 56(1): 263-267. doi: 10.7498/aps.56.263
    [20] 吴长勤, 张宇钟, 傅荣堂, 孙 鑫. 纯有机聚合物磁性的模型研究. 物理学报, 1999, 48(4): 713-720. doi: 10.7498/aps.48.713
计量
  • 文章访问数:  8273
  • PDF下载量:  2328
  • 被引次数: 0
出版历程
  • 收稿日期:  2012-07-02
  • 修回日期:  2012-09-15
  • 刊出日期:  2013-02-05

/

返回文章
返回