二维半导体过渡金属硫化物的逻辑集成器件

李卫胜; 周健; 王瀚宸; 汪树贤; 于志浩; 黎松林; 施毅; 王欣然

doi:10.7498/aps.66.218503

摘要

微电子器件沿摩尔定律持续发展超过50年，正面临着高功耗等挑战.二维层状材料可以将载流子限制在界面1 nm的空间内，部分材料展现出高迁移率、能带可调、拓扑奇异性等特点，有望给后摩尔时代微电子器件带来新的技术变革.其中，以MoS2为代表的过渡金属硫化物具有12 eV的带隙、良好的空气稳定性和工艺兼容性，在逻辑集成方面有巨大潜力.本文综述了二维过渡金属硫化物在逻辑器件领域的研究进展，重点讨论电子输运机理、迁移率、接触电阻等关键问题及集成技术的现状，并为今后的发展指出了方向.

关键词:

Abstract

The semiconductor industry has experienced exponential growth for more than 50 years, following the Moore's Law. However, traditional microelectronic devices are currently facing challenges such as high energy consumption and the short-channel effect. As an alternative, two-dimensional layered materials show the ability to restrain the carriers in a 1 nm physical limit, and demonstrate high electron mobility, mutable bandgap, and topological singularity, which will hopefully give birth to revolutionary changes in electronics. The transition metal dichalcogenide (TMDC) is regarded as a prospective candidate, since it has a large bandgap (typically about 1-2 eV for a monolayer) and excellent manufacture compatibility. Here in this paper, we review the most recent progress of two-dimensional TMDC and achievements in logic integration, especially focusing on the following key aspects:charge transport, carrier mobility, contact resistance and integration. We also point out the emerging directions for further research and development.

Keywords:

作者及机构信息

1.
南京大学电子科学与工程学院, 固体微结构国家重点实验室, 人工微结构科学与技术协同创新中心, 南京 210093

通信作者: 王欣然, xrwang@nju.edu.cn

基金项目: 国家自然科学基金（批准号：61325020，61521001）和国家重点基础研究发展计划（批准号：2013CBA01604，2015CB351900）资助的课题.

Authors and contacts

1.
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

Corresponding author: Wang Xin-Ran, xrwang@nju.edu.cn

Funds: Project support by the National Natural Science Foundation of China (Grant Nos. 61325020, 61521001) and the National Basic Research Program of China (Grant Nos. 2013CBA01604, 2015CB351900).

参考文献

[1]	Lange K, Muller-Seitz G, Sydow J, Windeler A 2013 Res. Policy 42 647
[2]	Liu Q, Vinet M, Gimbert J, Loubet N 2013 Electron Devices Meeting (IEDM), 2013 IEEE International Washington, DC, USA, December 9-11, 2013 p9.2.1
[3]	Mistry K, Allen C, Auth C, Beattie B 2007 Electron Devices Meeting, 2007. IEDM 2007. IEEE International Washington, DC, USA, December 10-12, 2007 p247
[4]	Welser J, Hoyt J L, Takagi S, Gibbons J F 1995 Electron Devices Meeting, 1994. IEDM'94. Technical Digest., International San Francisco, USA, December 11-14, 1994 p373
[5]	Welser J, Hoyt J L, Gibbons J F 1994 IEEE Electron. Dev. Lett. 15 100
[6]	Radisavljevic B, Kis A 2013 Nat. Mater. 12 815
[7]	Dennard R H, Gaensslen F H, Rideout V L, Bassous E, Leblanc A R 1974 IEEE J. Solid-St. Circ. 9 256
[8]	Castellanosgomez A 2016 Nat. Photon. 10 202
[9]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[10]	Li X, Wang X, Zhang L, Lee S, Dai H 2008 Science 319 1229
[11]	Zhang Y, Tang T T, Girit C, Hao Z, Martin M C, Zettl A, Crommie M F, Shen Y R, Wang F 2009 Nature 459 820
[12]	Elias D C, Nair R R, Mohiuddin T M, Morozov S V, Blake P, Halsall M P, Ferrari A C, Boukhvalov D W, Katsnelson M I, Geim A K, Novoselov K S 2009 Science 323 610
[13]	Jariwala D, Sangwan V K, Lauhon L J, Marks T J, Hersam M C 2014 ACS Nano 8 1102
[14]	Wang L, Chen Z, Dean C R, Taniguchi T, Watanabe K, Brus L E, Hone J 2012 ACS Nano 6 9314
[15]	Lang M, He L, Xiu F, Yu X, Tang J, Wang Y, Kou X, Jiang W, Fedorov A V, Wang K L 2012 ACS Nano 6 295
[16]	Wilson J A, Yoffe A D 1969 Adv. Phys. 18 193
[17]	Mak K F, He K, Shan J, Heinz T F 2012 Nat. Nanotechnol. 7 494
[18]	Chiu M H, Zhang C, Shiu H W, Chuu C P, Chen C H, Chang C Y S, Chen C H, Chou M Y, Shih C K, Li L J 2015 Nat. Commun. 6 7666
[19]	Liu E, Fu Y, Wang Y, Feng Y, Liu H, Wan X, Zhou W, Wang B, Shao L, Ho C H, Huang Y S, Cao Z, Wang L, Li A, Zeng J, Song F, Wang X, Shi Y, Yuan H, Hwang H Y, Cui Y, Miao F, Xing D 2015 Nat. Commun. 6 6991
[20]	Wang Y, Liu E, Liu H, Pan Y, Zhang L, Zeng J, Fu Y, Wang M, Xu K, Huang Z, Wang Z, Lu H Z, Xing D, Wang B, Wan X, Miao F 2016 Nat. Commun. 7 13142
[21]	Castro Neto A H 2001 Phys. Rev. Lett. 86 4382
[22]	Schaibley J R, Yu H Y, Clark G, Rivera P, Ross J S, Seyler K L, Yao W, Xu X D 2016 Nat. Rev. Mater. 1 16055
[23]	Liu Y, Weiss N O, Duan X D, Cheng H C, Huang Y, Duan X F 2016 Nat. Rev. Mater. 1 16042
[24]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotechnol. 6 147
[25]	Kuc A, Zibouche N, Heine T 2011 Phys. Rev. B 83 245213
[26]	Xiao D, Liu G B, Feng W, Xu X, Yao W 2012 Phys. Rev. Lett. 108 196802
[27]	Yan R H, Ourmazd A, Lee K F 1992 IEEE Trans. Electron Dev. 39 1704
[28]	Schwierz F 2010 Nat. Nanotechnol. 5 487
[29]	Desai S B, Madhvapathy S R, Sachid A B, Llinas J P, Wang Q, Ahn G H, Pitner G, Kim M J, Bokor J, Hu C, Wong H P, Javey A 2016 Science 354 99
[30]	Yu Z H, Ong Z Y, Li S L, Xu J B, Zhang G, Zhang Y W, Shi Y, Wang X R 2017 Adv. Funct. Mater. 27 1604093
[31]	Kaasbjerg K, Thygesen K S, Jacobsen K W 2012 Phys. Rev. B 85 115317
[32]	Zhang W X, Huang Z S, Zhang W L, Li Y R 2014 Nano Res. 7 1731
[33]	Chen M C, Lin C Y, Li K H, Li L J, Chen C H, Chuang C H, Lee M D, Chen Y J, Hou Y F, Lin C H 2014 Electron Devices Meeting (IEDM), 2014 IEEE International San Francisco, USA, December 15-17, 2014 p33.5.1
[34]	Li K S, Wu B W, Li L J, Li M Y, Cheng C C K, Hsu C L, Lin C H, Chen Y J, Chen C C, Wu C T 2016 VLSI Technology, 2016 IEEE Symposium on Honolulu, USA, June 14-16, 2016 p1
[35]	Xu X D, Yao W, Xiao D, Heinz T F 2014 Nat. Phys. 10 343
[36]	Ye Z L, Sun D Z, Heinz T F Joensen P, Frindt R F, Morrison S R 1986 Mater. Res. Bull. 21 457
[37]	Joensen P, Frindt R F, Morrison S R 1986 Mater. Res.Bull. 21 457
[38]	Ghatak S, Pal A N, Ghosh A 2011 ACS Nano 5 7707
[39]	Radisavljevic B, Whitwick M B, Kis A 2011 ACS Nano 5 9934
[40]	Wang H, Yu L, Lee Y H, Shi Y, Hsu A, Chin M L, Li L J, Dubey M, Kong J, Palacios T 2012 Nano Lett. 12 4674
[41]	Wachter S, Polyushkin D K, Bethge O, Mueller T 2017 Nat. Commun. 8 14948
[42]	Lee Y H, Zhang X Q, Zhang W, Chang M T, Lin C T, Chang K D, Yu Y C, Wang J T, Chang C S, Li L J, Lin T W 2012 Adv. Mater. 24 2320
[43]	Lin Y C, Zhang W, Huang J K, Liu K K, Lee Y H, Liang C T, Chu C W, Li L J 2012 Nanoscale 4 6637
[44]	Ling X, Lee Y H, Lin Y, Fang W, Yu L, Dresselhaus M S, Kong J 2014 Nano Lett. 14 464
[45]	Dumcenco D, Ovchinnikov D, Marinov K, Lazic P, Gibertini M, Marzari N, Lopez Sanchez O, Kung Y C, Krasnozhon D, Chen M W, Bertolazzi S, Gillet P, Fontcuberta i Morral A, Radenovic A, Kis A 2015 ACS Nano 9 4611
[46]	Shaw J C, Zhou H L, Chen Y, Weiss N O, Liu Y, Huang Y, Duan X F 2014 Nano Res. 7 511
[47]	Wang X, Gong Y, Shi G, Chow W L, Keyshar K, Ye G, Vajtai R, Lou J, Liu Z, Ringe E, Tay B K, Ajayan P M 2014 ACS Nano 8 5125
[48]	van der Zande A M, Huang P Y, Chenet D A, Berkelbach T C, You Y, Lee G H, Heinz T F, Reichman D R, Muller D A, Hone J C 2013 Nat. Mater. 12 554
[49]	Liu K K, Zhang W, Lee Y H, Lin Y C, Chang M T, Su C Y, Chang C S, Li H, Shi Y, Zhang H, Lai C S, Li L J 2012 Nano Lett. 12 1538
[50]	Kang K, Xie S, Huang L, Han Y, Huang P Y, Mak K F, Kim C J, Muller D, Park J 2015 Nature 520 656
[51]	Wang X, Feng H, Wu Y, Jiao L 2013 J. Am. Chem. Soc. 135 5304
[52]	Chen W, Zhao J, Zhang J, Gu L, Yang Z, Li X, Yu H, Zhu X, Yang R, Shi D, Lin X, Guo J, Bai X, Zhang G 2015 J. Am. Chem. Soc. 137 15632
[53]	Chen J, Zhao X, Tan S J, Xu H, Wu B, Liu B, Fu D, Fu W, Geng D, Liu Y, Liu W, Tang W, Li L, Zhou W, Sum T C, Loh K P 2017 J. Am. Chem. Soc. 139 1073
[54]	Li S L, Tsukagoshi K, Orgiu E, Samori P 2016 Chem. Soc. Rev. 45 118
[55]	Schmidt H, Giustiniano F, Eda G 2015 Chem. Soc. Rev. 44 7715
[56]	Butler S Z, Hollen S M, Cao L, Cui Y, Gupta J A, Gutierrez H R, Heinz T F, Hong S S, Huang J, Ismach A F, Johnston-Halperin E, Kuno M, Plashnitsa V V, Robinson R D, Ruoff R S, Salahuddin S, Shan J, Shi L, Spencer M G, Terrones M, Windl W, Goldberger J E 2013 ACS Nano 7 2898
[57]	Xu Y, Cheng C, Du S, Yang J, Yu B, Luo J, Yin W, Li E, Dong S, Ye P, Duan X 2016 ACS Nano 10 4895
[58]	Allain A, Kang J, Banerjee K, Kis A 2015 Nat. Mater. 14 1195
[59]	Pham V P, Yeom G Y 2016 Adv. Mater. 28 9024
[60]	Chhowalla M, Jena D, Zhang H 2016 Nat. Rev. Mater. 1 16052
[61]	Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N, Strano M S 2012 Nat. Nanotechnol. 7 699
[62]	Yu Z, Ong Z Y, Pan Y, Cui Y, Xin R, Shi Y, Wang B, Wu Y, Chen T, Zhang Y W, Zhang G, Wang X 2016 Adv. Mater. 28 547
[63]	Cui Y, Xin R, Yu Z, Pan Y, Ong Z Y, Wei X, Wang J, Nan H, Ni Z, Wu Y, Chen T, Shi Y, Wang B, Zhang G, Zhang Y W, Wang X 2015 Adv. Mater. 27 5230
[64]	Fleischauer P D, Bauer R 1987 Asle Trans. 30 160
[65]	Salvatore G A, Munzenrieder N, Barraud C, Petti L, Zysset C, Buthe L, Ensslin K, Troster G 2013 ACS Nano 7 8809
[66]	Moore B T, Ferry D K 1980 J. Appl. Phys. 51 2603
[67]	Fischetti M V, Neumayer D A, Cartier E A 2001 J. Appl. Phys. 90 4587
[68]	Veres J, Ogier S D, Leeming S W, Cupertino D C, Khaffaf S M 2003 Adv. Funct. Mater. 13 199
[69]	Hulea I N, Fratini S, Xie H, Mulder C L, Iossad N N, Rastelli G, Ciuchi S, Morpurgo A F 2006 Nat. Mater. 5 982
[70]	Chen J H, Jang C, Xiao S, Ishigami M, Fuhrer M S 2008 Nat. Nanotechnol. 3 206
[71]	DaSilva A M, Zou K, Jain J K, Zhu J 2010 Phys. Rev. Lett. 104 236601
[72]	Ando T, Fowler A B, Stern F 1982 Rev. Mod. Phys. 54 437
[73]	Sarma S D, Adam S, Hwang E, Rossi E 2011 Rev. Mod. Phys. 83 407
[74]	Ong Z Y, Fischetti M V 2013 Phys. Rev. B 88 165316
[75]	Amani M, Chin M L, Birdwell A G, Oregan T P 2013 Appl. Phys. Lett. 102 193107
[76]	Yu Z, Pan Y, Shen Y, Wang Z, Ong Z Y, Xu T, Xin R, Pan L, Wang B, Sun L, Wang J, Zhang G, Zhang Y W, Shi Y, Wang X 2014 Nat. Commun. 5 5290
[77]	Qiu H, Xu T, Wang Z, Ren W, Nan H, Ni Z, Chen Q, Yuan S, Miao F, Song F, Long G, Shi Y, Sun L, Wang J, Wang X 2013 Nat. Commun. 4 2642
[78]	Fuhr J D, Saul A, Sofo J O 2004 Phys. Rev. Lett. 92 026802
[79]	Lu C P, Li G, Mao J, Wang L M, Andrei E Y 2014 Nano Lett. 14 4628
[80]	Zhou W, Zou X, Najmaei S, Liu Z, Shi Y, Kong J, Lou J, Ajayan P M, Yakobson B I, Idrobo J C 2013 Nano Lett. 13 2615
[81]	Moses P G, Hinnemann B, Topse H, Nrskov J K 2007 J. Catal. 248 188
[82]	And J F P, Payen E 2003 J. Phys. Chem. B 107 4057
[83]	Voiry D, Yamaguchi H, Li J, Silva R, Alves D C, Fujita T, Chen M, Asefa T, Shenoy V B, Eda G, Chhowalla M 2013 Nat. Mater. 12 850
[84]	Karunadasa H I, Montalvo E, Sun Y J, Majda M, Long J R, Chang C J 2012 Science 335 698
[85]	Zhu W, Low T, Lee Y H, Wang H, Farmer D B, Kong J, Xia F, Avouris P 2014 Nat. Commun. 5 3087
[86]	Toshihiro K, Ryo Y, Kohei U 2012 Self‐Assembled Monolayer (SAM) (Weinheim: Wiley‐VCH Verlag GmbH Co. KGaA)
[87]	Schreiber F 2000 Structure and Growth of Self-assembling Monolayers (Chicago: University of Chicago Press)
[88]	Ulman A 1996 Chem. Rev. 96 1533
[89]	Wang X, Xu J B, Wang C, Du J, Xie W 2011 Adv. Mater. 23 2464
[90]	Li Y, Xu C Y, Hu P, Zhen L 2013 ACS Nano 7 7795
[91]	Najmaei S, Zou X, Er D, Li J, Jin Z, Gao W, Zhang Q, Park S, Ge L, Lei S, Kono J, Shenoy V B, Yakobson B I, George A, Ajayan P M, Lou J 2014 Nano Lett. 14 1354
[92]	Burson K M, Cullen W G, Adam S, Dean C R, Watanabe K, Taniguchi T, Kim P, Fuhrer M S 2013 Nano Lett. 13 3576
[93]	Dean C R, Young A F, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepard K L, Hone J 2010 Nat. Nanotechnol. 5 722
[94]	Wang L, Gao Y, Wen B, Han Z, Taniguchi T, Watanabe K, Koshino M, Hone J, Dean C R 2015 Science 350 1231
[95]	Meric I, Dean C R, Petrone N, Wang L, Hone J, Kim P, Shepard K L 2013 Proc. IEEE 101 1609
[96]	Shiue R J, Gao Y, Wang Y, Peng C, Robertson A D, Efetov D K, Assefa S, Koppens F H, Hone J, Englund D 2015 Nano Lett. 15 7288
[97]	Liu Y, Wu H, Cheng H C, Yang S, Zhu E, He Q, Ding M, Li D, Guo J, Weiss N O, Huang Y, Duan X 2015 Nano Lett. 15 3030
[98]	Chen X, Wu Z, Xu S, Wang L, Huang R, Han Y, Ye W, Xiong W, Han T, Long G, Wang Y, He Y, Cai Y, Sheng P, Wang N 2015 Nat. Commun. 6 6088
[99]	Qiu H, Pan L J, Yao Z N, Li J J, Shi Y, Wang X R 2012 Appl. Phys. Lett. 100 123104
[100]	Lembke D, Kis A 2012 ACS Nano 6 10070
[101]	Sangwan V K, Arnold H N, Jariwala D, Marks T J, Lauhon L J, Hersam M C 2013 Nano Lett. 13 4351
[102]	Cui X, Lee G H, Kim Y D, Arefe G, Huang P Y, Lee C H, Chenet D A, Zhang X, Wang L, Ye F, Pizzocchero F, Jessen B S, Watanabe K, Taniguchi T, Muller D A, Low T, Kim P, Hone J 2015 Nat. Nanotechnol. 10 534
[103]	Das S, Chen H Y, Penumatcha A V, Appenzeller J 2013 Nano Lett. 13 100
[104]	Popov I, Seifert G, Tomnek D 2012 Phys. Rev. Lett. 108 156802
[105]	Liu W, Kang J, Cao W, Sarkar D, Khatami Y, Jena D, Banerjee K 2013 Electron Devices Meeting (IEDM), 2013 IEEE International Washington, DC, USA, December 9-11, 2013 p19.4. 1
[106]	Kang J, Sarkar D, Liu W, Jena D, Banerjee K 2012 Electron Devices Meeting (IEDM), 2012 IEEE International San Francisco, USA, December 10-13, 2012 p17.4.1
[107]	Kang J H, Liu W, Sarkar D, Jena D, Banerjee K 2014 Phys. Rev. X 4 031005
[108]	Liu W, Sarkar D, Kang J, Cao W, Banerjee K 2015 ACS Nano 9 7904
[109]	Kang J H, Liu W, Banerjee K 2014 Appl. Phys. Lett. 104 093106
[110]	Yang L, Majumdar K, Liu H, Du Y, Wu H, Hatzistergos M, Hung P Y, Tieckelmann R, Tsai W, Hobbs C, Ye P D 2014 Nano Lett. 14 6275
[111]	Fang H, Chuang S, Chang T C, Takei K, Takahashi T, Javey A 2012 Nano Lett. 12 3788
[112]	Fang H, Tosun M, Seol G, Chang T C, Takei K, Guo J, Javey A 2013 Nano Lett. 13 1991
[113]	Du Y, Liu H, Neal A T, Si M, Peide D Y 2013 IEEE Electron. Dev. Lett. 34 1328
[114]	Zhao P, Kiriya D, Azcatl A, Zhang C, Tosun M, Liu Y S, Hettick M, Kang J S, McDonnell S, Santosh K C, Guo J, Cho K, Wallace R M, Javey A 2014 ACS Nano 8 10808
[115]	Kiriya D, Tosun M, Zhao P, Kang J S, Javey A 2014 J. Am. Chem. Soc. 136 7853
[116]	Rai A, Valsaraj A, Movva H C, Roy A, Ghosh R, Sonde S, Kang S, Chang J, Trivedi T, Dey R, Guchhait S, Larentis S, Register L F, Tutuc E, Banerjee S K 2015 Nano Lett. 15 4329
[117]	Mcclellan C J, Yalon E, Smithe K K H, Suryavanshi S V, Pop E 2017 Device Research Conference (DRC), 2017 75th Annual South Bend, USA, June 25-28, 2017 p1
[118]	Liu H, Si M, Deng Y, Neal A T, Du Y, Najmaei S, Ajayan P M, Lou J, Ye P D 2014 ACS Nano 8 1031
[119]	Baugher B W, Churchill H O, Yang Y, Jarillo-Herrero P 2013 Nano Lett. 13 4212
[120]	Guo Y, Han Y, Li J, Xiang A, Wei X, Gao S, Chen Q 2014 ACS Nano 8 7771
[121]	Kappera R, Voiry D, Yalcin S E, Branch B, Gupta G, Mohite A D, Chhowalla M 2014 Nat. Mater. 13 1128
[122]	Li S L, Komatsu K, Nakaharai S, Lin Y F, Yamamoto M, Duan X, Tsukagoshi K 2014 ACS Nano 8 12836
[123]	English C D, Shine G, Dorgan V E, Saraswat K C, Pop E 2016 Nano Lett. 16 3824
[124]	Wang J, Yao Q, Huang C W, Zou X, Liao L, Chen S, Fan Z, Zhang K, Wu W, Xiao X, Jiang C, Wu W W 2016 Adv. Mater. 28 8302
[125]	Kappera R, Voiry D, Yalcin S E, Jen W, Acerce M, Torrel S, Branch B, Lei S D, Chen W B, Najmaei S, Lou J, Ajayan P M, Gupta G, Mohite A D, Chhowalla M 2014 APL Mater. 2 092516
[126]	Lee G H, Cui X, Kim Y D, Arefe G, Zhang X, Lee C H, Ye F, Watanabe K, Taniguchi T, Kim P, Hone J 2015 ACS Nano 9 7019
[127]	Leong W S, Luo X, Li Y, Khoo K H, Quek S Y, Thong J T 2015 ACS Nano 9 869
[128]	Stokbro K, Engelund M, Blom A 2012 Phys. Rev. B 85 165442
[129]	Chuang H J, Tan X, Ghimire N J, Perera M M, Chamlagain B, Cheng M M, Yan J, Mandrus D, Tomanek D, Zhou Z 2014 Nano Lett. 14 3594
[130]	Chuang H J, Chamlagain B, Koehler M, Perera M M, Yan J, Mandrus D, Tomanek D, Zhou Z 2016 Nano Lett. 16 1896
[131]	Dankert A, Langouche L, Kamalakar M V, Dash S P 2014 ACS Nano 8 476
[132]	Chen J R, Odenthal P M, Swartz A G, Floyd G C, Wen H, Luo K Y, Kawakami R K 2013 Nano Lett. 13 3106
[133]	Lee S, Tang A, Aloni S, Wong H S 2016 Nano Lett. 16 276
[134]	Cui X, Shih E M, Jauregui L A, Chae S H, Kim Y D, Li B, Seo D, Pistunova K, Yin J, Park J H, Choi H J, Lee Y H, Watanabe K, Taniguchi T, Kim P, Dean C R, Hone J C 2017 Nano Lett. 17 4781
[135]	Yu L, Lee Y H, Ling X, Santos E J, Shin Y C, Lin Y, Dubey M, Kaxiras E, Kong J, Wang H, Palacios T 2014 Nano Lett. 14 3055
[136]	Amani M, Burke R A, Proie R M, Dubey M 2015 Nanotechnology 26 115202
[137]	Yu W J, Li Z, Zhou H, Chen Y, Wang Y, Huang Y, Duan X 2013 Nat. Mater. 12 246
[138]	Pezeshki A, Hosseini Shokouh S H, Jeon P J, Shackery I, Kim J S, Oh I K, Jun S C, Kim H, Im S 2016 ACS Nano 10 1118
[139]	Pu J, Funahashi K, Chen C H, Li M Y, Li L J, Takenobu T 2016 Adv. Mater. 28 4111
[140]	Huang J, Somu S, Busnaina A 2012 Nanotechnology 23 335203
[141]	Sachid A B, Tosun M, Desai S B, Hsu C Y, Lien D H, Madhvapathy S R, Chen Y Z, Hettick M, Kang J S, Zeng Y, He J H, Chang E Y, Chueh Y L, Javey A, Hu C 2016 Adv. Mater. 28 2547
[142]	Liu H, Neal A T, Zhu Z, Luo Z, Xu X, Tomanek D, Ye P D 2014 ACS Nano 8 4033
[143]	Su Y, Kshirsagar C U, Robbins M C, Haratipour N, Koester S J 2016 2d Mater. 3 011006
[144]	Jeon P J, Kim J S, Lim J Y, Cho Y, Pezeshki A, Lee H S, Yu S, Min S W, Im S 2015 ACS Appl. Mater. Inter. 7 22333
[145]	Cho A J, Park K C, Kwon J Y 2015 Nanoscale Res. Lett. 10 115
[146]	Yu C H, Fan M L, Yu K C, Hu V P H, Su P, Chuang C T 2016 IEEE Trans. Electron Dev. 63 625
[147]	Kshirsagar C U, Xu W, Su Y, Robbins M C, Kim C H, Koester S J 2016 ACS Nano 10 8457
[148]	Zhang E, Wang W, Zhang C, Jin Y, Zhu G, Sun Q, Zhang D W, Zhou P, Xiu F 2015 ACS Nano 9 612
[149]	Chen M C, Li K S, Li L J, Lu A Y, Li M Y, Chang Y H, Lin C H, Chen Y J, Hou Y F, Chen C C 2015 Electron Devices Meeting (IEDM), 2015 IEEE International Washington, DC, USA, December 7-9, 2015 p32.2.1
[150]	Xu K, Chen D, Yang F, Wang Z, Yin L, Wang F, Cheng R, Liu K, Xiong J, Liu Q, He J 2017 Nano Lett. 17 1065
[151]	Nourbakhsh A, Zubair A, Sajjad R N, Tavakkoli K G A, Chen W, Fang S, Ling X, Kong J, Dresselhaus M S, Kaxiras E, Berggren K K, Antoniadis D, Palacios T 2016 Nano Lett. 16 7798
[152]	Xie L, Liao M, Wang S, Yu H, Du L, Tang J, Zhao J, Zhang J, Chen P, Lu X, Wang G, Xie G, Yang R, Shi D, Zhang G 2017 Adv. Mater. 2017 1702522

施引文献

[1]	Lange K, Muller-Seitz G, Sydow J, Windeler A 2013 Res. Policy 42 647
[2]	Liu Q, Vinet M, Gimbert J, Loubet N 2013 Electron Devices Meeting (IEDM), 2013 IEEE International Washington, DC, USA, December 9-11, 2013 p9.2.1
[3]	Mistry K, Allen C, Auth C, Beattie B 2007 Electron Devices Meeting, 2007. IEDM 2007. IEEE International Washington, DC, USA, December 10-12, 2007 p247
[4]	Welser J, Hoyt J L, Takagi S, Gibbons J F 1995 Electron Devices Meeting, 1994. IEDM'94. Technical Digest., International San Francisco, USA, December 11-14, 1994 p373
[5]	Welser J, Hoyt J L, Gibbons J F 1994 IEEE Electron. Dev. Lett. 15 100
[6]	Radisavljevic B, Kis A 2013 Nat. Mater. 12 815
[7]	Dennard R H, Gaensslen F H, Rideout V L, Bassous E, Leblanc A R 1974 IEEE J. Solid-St. Circ. 9 256
[8]	Castellanosgomez A 2016 Nat. Photon. 10 202
[9]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[10]	Li X, Wang X, Zhang L, Lee S, Dai H 2008 Science 319 1229
[11]	Zhang Y, Tang T T, Girit C, Hao Z, Martin M C, Zettl A, Crommie M F, Shen Y R, Wang F 2009 Nature 459 820
[12]	Elias D C, Nair R R, Mohiuddin T M, Morozov S V, Blake P, Halsall M P, Ferrari A C, Boukhvalov D W, Katsnelson M I, Geim A K, Novoselov K S 2009 Science 323 610
[13]	Jariwala D, Sangwan V K, Lauhon L J, Marks T J, Hersam M C 2014 ACS Nano 8 1102
[14]	Wang L, Chen Z, Dean C R, Taniguchi T, Watanabe K, Brus L E, Hone J 2012 ACS Nano 6 9314
[15]	Lang M, He L, Xiu F, Yu X, Tang J, Wang Y, Kou X, Jiang W, Fedorov A V, Wang K L 2012 ACS Nano 6 295
[16]	Wilson J A, Yoffe A D 1969 Adv. Phys. 18 193
[17]	Mak K F, He K, Shan J, Heinz T F 2012 Nat. Nanotechnol. 7 494
[18]	Chiu M H, Zhang C, Shiu H W, Chuu C P, Chen C H, Chang C Y S, Chen C H, Chou M Y, Shih C K, Li L J 2015 Nat. Commun. 6 7666
[19]	Liu E, Fu Y, Wang Y, Feng Y, Liu H, Wan X, Zhou W, Wang B, Shao L, Ho C H, Huang Y S, Cao Z, Wang L, Li A, Zeng J, Song F, Wang X, Shi Y, Yuan H, Hwang H Y, Cui Y, Miao F, Xing D 2015 Nat. Commun. 6 6991
[20]	Wang Y, Liu E, Liu H, Pan Y, Zhang L, Zeng J, Fu Y, Wang M, Xu K, Huang Z, Wang Z, Lu H Z, Xing D, Wang B, Wan X, Miao F 2016 Nat. Commun. 7 13142
[21]	Castro Neto A H 2001 Phys. Rev. Lett. 86 4382
[22]	Schaibley J R, Yu H Y, Clark G, Rivera P, Ross J S, Seyler K L, Yao W, Xu X D 2016 Nat. Rev. Mater. 1 16055
[23]	Liu Y, Weiss N O, Duan X D, Cheng H C, Huang Y, Duan X F 2016 Nat. Rev. Mater. 1 16042
[24]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotechnol. 6 147
[25]	Kuc A, Zibouche N, Heine T 2011 Phys. Rev. B 83 245213
[26]	Xiao D, Liu G B, Feng W, Xu X, Yao W 2012 Phys. Rev. Lett. 108 196802
[27]	Yan R H, Ourmazd A, Lee K F 1992 IEEE Trans. Electron Dev. 39 1704
[28]	Schwierz F 2010 Nat. Nanotechnol. 5 487
[29]	Desai S B, Madhvapathy S R, Sachid A B, Llinas J P, Wang Q, Ahn G H, Pitner G, Kim M J, Bokor J, Hu C, Wong H P, Javey A 2016 Science 354 99
[30]	Yu Z H, Ong Z Y, Li S L, Xu J B, Zhang G, Zhang Y W, Shi Y, Wang X R 2017 Adv. Funct. Mater. 27 1604093
[31]	Kaasbjerg K, Thygesen K S, Jacobsen K W 2012 Phys. Rev. B 85 115317
[32]	Zhang W X, Huang Z S, Zhang W L, Li Y R 2014 Nano Res. 7 1731
[33]	Chen M C, Lin C Y, Li K H, Li L J, Chen C H, Chuang C H, Lee M D, Chen Y J, Hou Y F, Lin C H 2014 Electron Devices Meeting (IEDM), 2014 IEEE International San Francisco, USA, December 15-17, 2014 p33.5.1
[34]	Li K S, Wu B W, Li L J, Li M Y, Cheng C C K, Hsu C L, Lin C H, Chen Y J, Chen C C, Wu C T 2016 VLSI Technology, 2016 IEEE Symposium on Honolulu, USA, June 14-16, 2016 p1
[35]	Xu X D, Yao W, Xiao D, Heinz T F 2014 Nat. Phys. 10 343
[36]	Ye Z L, Sun D Z, Heinz T F Joensen P, Frindt R F, Morrison S R 1986 Mater. Res. Bull. 21 457
[37]	Joensen P, Frindt R F, Morrison S R 1986 Mater. Res.Bull. 21 457
[38]	Ghatak S, Pal A N, Ghosh A 2011 ACS Nano 5 7707
[39]	Radisavljevic B, Whitwick M B, Kis A 2011 ACS Nano 5 9934
[40]	Wang H, Yu L, Lee Y H, Shi Y, Hsu A, Chin M L, Li L J, Dubey M, Kong J, Palacios T 2012 Nano Lett. 12 4674
[41]	Wachter S, Polyushkin D K, Bethge O, Mueller T 2017 Nat. Commun. 8 14948
[42]	Lee Y H, Zhang X Q, Zhang W, Chang M T, Lin C T, Chang K D, Yu Y C, Wang J T, Chang C S, Li L J, Lin T W 2012 Adv. Mater. 24 2320
[43]	Lin Y C, Zhang W, Huang J K, Liu K K, Lee Y H, Liang C T, Chu C W, Li L J 2012 Nanoscale 4 6637
[44]	Ling X, Lee Y H, Lin Y, Fang W, Yu L, Dresselhaus M S, Kong J 2014 Nano Lett. 14 464
[45]	Dumcenco D, Ovchinnikov D, Marinov K, Lazic P, Gibertini M, Marzari N, Lopez Sanchez O, Kung Y C, Krasnozhon D, Chen M W, Bertolazzi S, Gillet P, Fontcuberta i Morral A, Radenovic A, Kis A 2015 ACS Nano 9 4611
[46]	Shaw J C, Zhou H L, Chen Y, Weiss N O, Liu Y, Huang Y, Duan X F 2014 Nano Res. 7 511
[47]	Wang X, Gong Y, Shi G, Chow W L, Keyshar K, Ye G, Vajtai R, Lou J, Liu Z, Ringe E, Tay B K, Ajayan P M 2014 ACS Nano 8 5125
[48]	van der Zande A M, Huang P Y, Chenet D A, Berkelbach T C, You Y, Lee G H, Heinz T F, Reichman D R, Muller D A, Hone J C 2013 Nat. Mater. 12 554
[49]	Liu K K, Zhang W, Lee Y H, Lin Y C, Chang M T, Su C Y, Chang C S, Li H, Shi Y, Zhang H, Lai C S, Li L J 2012 Nano Lett. 12 1538
[50]	Kang K, Xie S, Huang L, Han Y, Huang P Y, Mak K F, Kim C J, Muller D, Park J 2015 Nature 520 656
[51]	Wang X, Feng H, Wu Y, Jiao L 2013 J. Am. Chem. Soc. 135 5304
[52]	Chen W, Zhao J, Zhang J, Gu L, Yang Z, Li X, Yu H, Zhu X, Yang R, Shi D, Lin X, Guo J, Bai X, Zhang G 2015 J. Am. Chem. Soc. 137 15632
[53]	Chen J, Zhao X, Tan S J, Xu H, Wu B, Liu B, Fu D, Fu W, Geng D, Liu Y, Liu W, Tang W, Li L, Zhou W, Sum T C, Loh K P 2017 J. Am. Chem. Soc. 139 1073
[54]	Li S L, Tsukagoshi K, Orgiu E, Samori P 2016 Chem. Soc. Rev. 45 118
[55]	Schmidt H, Giustiniano F, Eda G 2015 Chem. Soc. Rev. 44 7715
[56]	Butler S Z, Hollen S M, Cao L, Cui Y, Gupta J A, Gutierrez H R, Heinz T F, Hong S S, Huang J, Ismach A F, Johnston-Halperin E, Kuno M, Plashnitsa V V, Robinson R D, Ruoff R S, Salahuddin S, Shan J, Shi L, Spencer M G, Terrones M, Windl W, Goldberger J E 2013 ACS Nano 7 2898
[57]	Xu Y, Cheng C, Du S, Yang J, Yu B, Luo J, Yin W, Li E, Dong S, Ye P, Duan X 2016 ACS Nano 10 4895
[58]	Allain A, Kang J, Banerjee K, Kis A 2015 Nat. Mater. 14 1195
[59]	Pham V P, Yeom G Y 2016 Adv. Mater. 28 9024
[60]	Chhowalla M, Jena D, Zhang H 2016 Nat. Rev. Mater. 1 16052
[61]	Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N, Strano M S 2012 Nat. Nanotechnol. 7 699
[62]	Yu Z, Ong Z Y, Pan Y, Cui Y, Xin R, Shi Y, Wang B, Wu Y, Chen T, Zhang Y W, Zhang G, Wang X 2016 Adv. Mater. 28 547
[63]	Cui Y, Xin R, Yu Z, Pan Y, Ong Z Y, Wei X, Wang J, Nan H, Ni Z, Wu Y, Chen T, Shi Y, Wang B, Zhang G, Zhang Y W, Wang X 2015 Adv. Mater. 27 5230
[64]	Fleischauer P D, Bauer R 1987 Asle Trans. 30 160
[65]	Salvatore G A, Munzenrieder N, Barraud C, Petti L, Zysset C, Buthe L, Ensslin K, Troster G 2013 ACS Nano 7 8809
[66]	Moore B T, Ferry D K 1980 J. Appl. Phys. 51 2603
[67]	Fischetti M V, Neumayer D A, Cartier E A 2001 J. Appl. Phys. 90 4587
[68]	Veres J, Ogier S D, Leeming S W, Cupertino D C, Khaffaf S M 2003 Adv. Funct. Mater. 13 199
[69]	Hulea I N, Fratini S, Xie H, Mulder C L, Iossad N N, Rastelli G, Ciuchi S, Morpurgo A F 2006 Nat. Mater. 5 982
[70]	Chen J H, Jang C, Xiao S, Ishigami M, Fuhrer M S 2008 Nat. Nanotechnol. 3 206
[71]	DaSilva A M, Zou K, Jain J K, Zhu J 2010 Phys. Rev. Lett. 104 236601
[72]	Ando T, Fowler A B, Stern F 1982 Rev. Mod. Phys. 54 437
[73]	Sarma S D, Adam S, Hwang E, Rossi E 2011 Rev. Mod. Phys. 83 407
[74]	Ong Z Y, Fischetti M V 2013 Phys. Rev. B 88 165316
[75]	Amani M, Chin M L, Birdwell A G, Oregan T P 2013 Appl. Phys. Lett. 102 193107
[76]	Yu Z, Pan Y, Shen Y, Wang Z, Ong Z Y, Xu T, Xin R, Pan L, Wang B, Sun L, Wang J, Zhang G, Zhang Y W, Shi Y, Wang X 2014 Nat. Commun. 5 5290
[77]	Qiu H, Xu T, Wang Z, Ren W, Nan H, Ni Z, Chen Q, Yuan S, Miao F, Song F, Long G, Shi Y, Sun L, Wang J, Wang X 2013 Nat. Commun. 4 2642
[78]	Fuhr J D, Saul A, Sofo J O 2004 Phys. Rev. Lett. 92 026802
[79]	Lu C P, Li G, Mao J, Wang L M, Andrei E Y 2014 Nano Lett. 14 4628
[80]	Zhou W, Zou X, Najmaei S, Liu Z, Shi Y, Kong J, Lou J, Ajayan P M, Yakobson B I, Idrobo J C 2013 Nano Lett. 13 2615
[81]	Moses P G, Hinnemann B, Topse H, Nrskov J K 2007 J. Catal. 248 188
[82]	And J F P, Payen E 2003 J. Phys. Chem. B 107 4057
[83]	Voiry D, Yamaguchi H, Li J, Silva R, Alves D C, Fujita T, Chen M, Asefa T, Shenoy V B, Eda G, Chhowalla M 2013 Nat. Mater. 12 850
[84]	Karunadasa H I, Montalvo E, Sun Y J, Majda M, Long J R, Chang C J 2012 Science 335 698
[85]	Zhu W, Low T, Lee Y H, Wang H, Farmer D B, Kong J, Xia F, Avouris P 2014 Nat. Commun. 5 3087
[86]	Toshihiro K, Ryo Y, Kohei U 2012 Self‐Assembled Monolayer (SAM) (Weinheim: Wiley‐VCH Verlag GmbH Co. KGaA)
[87]	Schreiber F 2000 Structure and Growth of Self-assembling Monolayers (Chicago: University of Chicago Press)
[88]	Ulman A 1996 Chem. Rev. 96 1533
[89]	Wang X, Xu J B, Wang C, Du J, Xie W 2011 Adv. Mater. 23 2464
[90]	Li Y, Xu C Y, Hu P, Zhen L 2013 ACS Nano 7 7795
[91]	Najmaei S, Zou X, Er D, Li J, Jin Z, Gao W, Zhang Q, Park S, Ge L, Lei S, Kono J, Shenoy V B, Yakobson B I, George A, Ajayan P M, Lou J 2014 Nano Lett. 14 1354
[92]	Burson K M, Cullen W G, Adam S, Dean C R, Watanabe K, Taniguchi T, Kim P, Fuhrer M S 2013 Nano Lett. 13 3576
[93]	Dean C R, Young A F, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepard K L, Hone J 2010 Nat. Nanotechnol. 5 722
[94]	Wang L, Gao Y, Wen B, Han Z, Taniguchi T, Watanabe K, Koshino M, Hone J, Dean C R 2015 Science 350 1231
[95]	Meric I, Dean C R, Petrone N, Wang L, Hone J, Kim P, Shepard K L 2013 Proc. IEEE 101 1609
[96]	Shiue R J, Gao Y, Wang Y, Peng C, Robertson A D, Efetov D K, Assefa S, Koppens F H, Hone J, Englund D 2015 Nano Lett. 15 7288
[97]	Liu Y, Wu H, Cheng H C, Yang S, Zhu E, He Q, Ding M, Li D, Guo J, Weiss N O, Huang Y, Duan X 2015 Nano Lett. 15 3030
[98]	Chen X, Wu Z, Xu S, Wang L, Huang R, Han Y, Ye W, Xiong W, Han T, Long G, Wang Y, He Y, Cai Y, Sheng P, Wang N 2015 Nat. Commun. 6 6088
[99]	Qiu H, Pan L J, Yao Z N, Li J J, Shi Y, Wang X R 2012 Appl. Phys. Lett. 100 123104
[100]	Lembke D, Kis A 2012 ACS Nano 6 10070
[101]	Sangwan V K, Arnold H N, Jariwala D, Marks T J, Lauhon L J, Hersam M C 2013 Nano Lett. 13 4351
[102]	Cui X, Lee G H, Kim Y D, Arefe G, Huang P Y, Lee C H, Chenet D A, Zhang X, Wang L, Ye F, Pizzocchero F, Jessen B S, Watanabe K, Taniguchi T, Muller D A, Low T, Kim P, Hone J 2015 Nat. Nanotechnol. 10 534
[103]	Das S, Chen H Y, Penumatcha A V, Appenzeller J 2013 Nano Lett. 13 100
[104]	Popov I, Seifert G, Tomnek D 2012 Phys. Rev. Lett. 108 156802
[105]	Liu W, Kang J, Cao W, Sarkar D, Khatami Y, Jena D, Banerjee K 2013 Electron Devices Meeting (IEDM), 2013 IEEE International Washington, DC, USA, December 9-11, 2013 p19.4. 1
[106]	Kang J, Sarkar D, Liu W, Jena D, Banerjee K 2012 Electron Devices Meeting (IEDM), 2012 IEEE International San Francisco, USA, December 10-13, 2012 p17.4.1
[107]	Kang J H, Liu W, Sarkar D, Jena D, Banerjee K 2014 Phys. Rev. X 4 031005
[108]	Liu W, Sarkar D, Kang J, Cao W, Banerjee K 2015 ACS Nano 9 7904
[109]	Kang J H, Liu W, Banerjee K 2014 Appl. Phys. Lett. 104 093106
[110]	Yang L, Majumdar K, Liu H, Du Y, Wu H, Hatzistergos M, Hung P Y, Tieckelmann R, Tsai W, Hobbs C, Ye P D 2014 Nano Lett. 14 6275
[111]	Fang H, Chuang S, Chang T C, Takei K, Takahashi T, Javey A 2012 Nano Lett. 12 3788
[112]	Fang H, Tosun M, Seol G, Chang T C, Takei K, Guo J, Javey A 2013 Nano Lett. 13 1991
[113]	Du Y, Liu H, Neal A T, Si M, Peide D Y 2013 IEEE Electron. Dev. Lett. 34 1328
[114]	Zhao P, Kiriya D, Azcatl A, Zhang C, Tosun M, Liu Y S, Hettick M, Kang J S, McDonnell S, Santosh K C, Guo J, Cho K, Wallace R M, Javey A 2014 ACS Nano 8 10808
[115]	Kiriya D, Tosun M, Zhao P, Kang J S, Javey A 2014 J. Am. Chem. Soc. 136 7853
[116]	Rai A, Valsaraj A, Movva H C, Roy A, Ghosh R, Sonde S, Kang S, Chang J, Trivedi T, Dey R, Guchhait S, Larentis S, Register L F, Tutuc E, Banerjee S K 2015 Nano Lett. 15 4329
[117]	Mcclellan C J, Yalon E, Smithe K K H, Suryavanshi S V, Pop E 2017 Device Research Conference (DRC), 2017 75th Annual South Bend, USA, June 25-28, 2017 p1
[118]	Liu H, Si M, Deng Y, Neal A T, Du Y, Najmaei S, Ajayan P M, Lou J, Ye P D 2014 ACS Nano 8 1031
[119]	Baugher B W, Churchill H O, Yang Y, Jarillo-Herrero P 2013 Nano Lett. 13 4212
[120]	Guo Y, Han Y, Li J, Xiang A, Wei X, Gao S, Chen Q 2014 ACS Nano 8 7771
[121]	Kappera R, Voiry D, Yalcin S E, Branch B, Gupta G, Mohite A D, Chhowalla M 2014 Nat. Mater. 13 1128
[122]	Li S L, Komatsu K, Nakaharai S, Lin Y F, Yamamoto M, Duan X, Tsukagoshi K 2014 ACS Nano 8 12836
[123]	English C D, Shine G, Dorgan V E, Saraswat K C, Pop E 2016 Nano Lett. 16 3824
[124]	Wang J, Yao Q, Huang C W, Zou X, Liao L, Chen S, Fan Z, Zhang K, Wu W, Xiao X, Jiang C, Wu W W 2016 Adv. Mater. 28 8302
[125]	Kappera R, Voiry D, Yalcin S E, Jen W, Acerce M, Torrel S, Branch B, Lei S D, Chen W B, Najmaei S, Lou J, Ajayan P M, Gupta G, Mohite A D, Chhowalla M 2014 APL Mater. 2 092516
[126]	Lee G H, Cui X, Kim Y D, Arefe G, Zhang X, Lee C H, Ye F, Watanabe K, Taniguchi T, Kim P, Hone J 2015 ACS Nano 9 7019
[127]	Leong W S, Luo X, Li Y, Khoo K H, Quek S Y, Thong J T 2015 ACS Nano 9 869
[128]	Stokbro K, Engelund M, Blom A 2012 Phys. Rev. B 85 165442
[129]	Chuang H J, Tan X, Ghimire N J, Perera M M, Chamlagain B, Cheng M M, Yan J, Mandrus D, Tomanek D, Zhou Z 2014 Nano Lett. 14 3594
[130]	Chuang H J, Chamlagain B, Koehler M, Perera M M, Yan J, Mandrus D, Tomanek D, Zhou Z 2016 Nano Lett. 16 1896
[131]	Dankert A, Langouche L, Kamalakar M V, Dash S P 2014 ACS Nano 8 476
[132]	Chen J R, Odenthal P M, Swartz A G, Floyd G C, Wen H, Luo K Y, Kawakami R K 2013 Nano Lett. 13 3106
[133]	Lee S, Tang A, Aloni S, Wong H S 2016 Nano Lett. 16 276
[134]	Cui X, Shih E M, Jauregui L A, Chae S H, Kim Y D, Li B, Seo D, Pistunova K, Yin J, Park J H, Choi H J, Lee Y H, Watanabe K, Taniguchi T, Kim P, Dean C R, Hone J C 2017 Nano Lett. 17 4781
[135]	Yu L, Lee Y H, Ling X, Santos E J, Shin Y C, Lin Y, Dubey M, Kaxiras E, Kong J, Wang H, Palacios T 2014 Nano Lett. 14 3055
[136]	Amani M, Burke R A, Proie R M, Dubey M 2015 Nanotechnology 26 115202
[137]	Yu W J, Li Z, Zhou H, Chen Y, Wang Y, Huang Y, Duan X 2013 Nat. Mater. 12 246
[138]	Pezeshki A, Hosseini Shokouh S H, Jeon P J, Shackery I, Kim J S, Oh I K, Jun S C, Kim H, Im S 2016 ACS Nano 10 1118
[139]	Pu J, Funahashi K, Chen C H, Li M Y, Li L J, Takenobu T 2016 Adv. Mater. 28 4111
[140]	Huang J, Somu S, Busnaina A 2012 Nanotechnology 23 335203
[141]	Sachid A B, Tosun M, Desai S B, Hsu C Y, Lien D H, Madhvapathy S R, Chen Y Z, Hettick M, Kang J S, Zeng Y, He J H, Chang E Y, Chueh Y L, Javey A, Hu C 2016 Adv. Mater. 28 2547
[142]	Liu H, Neal A T, Zhu Z, Luo Z, Xu X, Tomanek D, Ye P D 2014 ACS Nano 8 4033
[143]	Su Y, Kshirsagar C U, Robbins M C, Haratipour N, Koester S J 2016 2d Mater. 3 011006
[144]	Jeon P J, Kim J S, Lim J Y, Cho Y, Pezeshki A, Lee H S, Yu S, Min S W, Im S 2015 ACS Appl. Mater. Inter. 7 22333
[145]	Cho A J, Park K C, Kwon J Y 2015 Nanoscale Res. Lett. 10 115
[146]	Yu C H, Fan M L, Yu K C, Hu V P H, Su P, Chuang C T 2016 IEEE Trans. Electron Dev. 63 625
[147]	Kshirsagar C U, Xu W, Su Y, Robbins M C, Kim C H, Koester S J 2016 ACS Nano 10 8457
[148]	Zhang E, Wang W, Zhang C, Jin Y, Zhu G, Sun Q, Zhang D W, Zhou P, Xiu F 2015 ACS Nano 9 612
[149]	Chen M C, Li K S, Li L J, Lu A Y, Li M Y, Chang Y H, Lin C H, Chen Y J, Hou Y F, Chen C C 2015 Electron Devices Meeting (IEDM), 2015 IEEE International Washington, DC, USA, December 7-9, 2015 p32.2.1
[150]	Xu K, Chen D, Yang F, Wang Z, Yin L, Wang F, Cheng R, Liu K, Xiong J, Liu Q, He J 2017 Nano Lett. 17 1065
[151]	Nourbakhsh A, Zubair A, Sajjad R N, Tavakkoli K G A, Chen W, Fang S, Ling X, Kong J, Dresselhaus M S, Kaxiras E, Berggren K K, Antoniadis D, Palacios T 2016 Nano Lett. 16 7798
[152]	Xie L, Liao M, Wang S, Yu H, Du L, Tang J, Zhao J, Zhang J, Chen P, Lu X, Wang G, Xie G, Yang R, Shi D, Zhang G 2017 Adv. Mater. 2017 1702522

[1]	张磊, 陈起航, 曹硕, 钱萍. 基于第一性原理计算单层IrSCl和IrSI的载流子迁移率. 物理学报, 2024, 73(21): 217201. doi: 10.7498/aps.73.20241044
[2]	张冷, 沈宇皓, 汤朝阳, 吴孔平, 张鹏展, 刘飞, 侯纪伟. 单轴应变对Sb₂Se₃空穴迁移率的影响. 物理学报, 2024, 73(11): 117101. doi: 10.7498/aps.73.20240175
[3]	张冷, 张鹏展, 刘飞, 李方政, 罗毅, 侯纪伟, 吴孔平. 基于形变势理论的掺杂计算Sb₂Se₃空穴迁移率. 物理学报, 2024, 73(4): 047101. doi: 10.7498/aps.73.20231406
[4]	舒衍涛, 张有为, 王顺. 基于过渡金属硫族化合物同质结的光电探测器. 物理学报, 2021, 70(17): 177301. doi: 10.7498/aps.70.20210859
[5]	底琳佳, 戴显英, 宋建军, 苗东铭, 赵天龙, 吴淑静, 郝跃. 基于锡组分和双轴张应力调控的临界带隙应变Ge1-xSnx能带特性与迁移率计算. 物理学报, 2018, 67(2): 027101. doi: 10.7498/aps.67.20171969
[6]	周愈之. 过渡金属硫族化合物柔性基底体系的模型与应用. 物理学报, 2018, 67(21): 218102. doi: 10.7498/aps.67.20181571
[7]	徐飘荣, 强蕾, 姚若河. 一个非晶InGaZnO薄膜晶体管线性区陷阱态的提取方法. 物理学报, 2015, 64(13): 137101. doi: 10.7498/aps.64.137101
[8]	白敏, 宣荣喜, 宋建军, 张鹤鸣, 胡辉勇, 舒斌. 压应变Ge/(001)Si1-xGex空穴散射与迁移率模型. 物理学报, 2015, 64(3): 038501. doi: 10.7498/aps.64.038501
[9]	唐欣月, 高红, 潘思明, 孙鉴波, 姚秀伟, 张喜田. 单根In掺杂ZnO纳米带场效应管的电学性质. 物理学报, 2014, 63(19): 197302. doi: 10.7498/aps.63.197302
[10]	柴玉华, 郭玉秀, 卞伟, 李雯, 杨涛, 仪明东, 范曲立, 解令海, 黄维. 柔性有机非易失性场效应晶体管存储器的研究进展. 物理学报, 2014, 63(2): 027302. doi: 10.7498/aps.63.027302
[11]	高娅娜, 李喜峰, 张建华. 溶胶凝胶法制备高性能锆铝氧化物作为绝缘层的薄膜晶体管. 物理学报, 2014, 63(11): 118502. doi: 10.7498/aps.63.118502
[12]	董海明. 低温下二硫化钼电子迁移率研究. 物理学报, 2013, 62(20): 206101. doi: 10.7498/aps.62.206101
[13]	董京, 柴玉华, 赵跃智, 石巍巍, 郭玉秀, 仪明东, 解令海, 黄维. 柔性有机场效应晶体管研究进展. 物理学报, 2013, 62(4): 047301. doi: 10.7498/aps.62.047301
[14]	於黄忠. 空间电荷限制电流法测量共混体系中空穴的迁移率. 物理学报, 2012, 61(8): 087204. doi: 10.7498/aps.61.087204
[15]	骆杨, 段羽, 陈平, 臧春亮, 谢月, 赵毅, 刘式墉. 利用空间电荷限制电流方法确定三(8-羟基喹啉)铝的电子迁移率特性初步研究. 物理学报, 2012, 61(14): 147801. doi: 10.7498/aps.61.147801
[16]	张金风, 王平亚, 薛军帅, 周勇波, 张进成, 郝跃. 高电子迁移率晶格匹配InAlN/GaN材料研究. 物理学报, 2011, 60(11): 117305. doi: 10.7498/aps.60.117305
[17]	徐苗, 彭俊彪. 制膜工艺对聚合物太阳电池性能影响的研究. 物理学报, 2010, 59(3): 2131-2136. doi: 10.7498/aps.59.2131
[18]	代月花, 陈军宁, 柯导明, 孙家讹, 胡媛. 纳米MOSFET迁移率解析模型. 物理学报, 2006, 55(11): 6090-6094. doi: 10.7498/aps.55.6090
[19]	许雪梅, 彭景翠, 李宏建, 瞿述, 罗小华. 载流子迁移率对单层有机发光二极管复合效率的影响. 物理学报, 2002, 51(10): 2380-2385. doi: 10.7498/aps.51.2380
[20]	李志锋, 陆卫, 叶红娟, 袁先璋, 沈学础, G.Li, S.J.Chua. GaN载流子浓度和迁移率的光谱研究. 物理学报, 2000, 49(8): 1614-1619. doi: 10.7498/aps.49.1614

计量

文章访问数: 16402
PDF下载量: 1271
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板