搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

单根In掺杂ZnO纳米带场效应管的电学性质

唐欣月 高红 潘思明 孙鉴波 姚秀伟 张喜田

引用本文:
Citation:

单根In掺杂ZnO纳米带场效应管的电学性质

唐欣月, 高红, 潘思明, 孙鉴波, 姚秀伟, 张喜田

Electrical characteristics of individual In-doped ZnO nanobelt field effect transistor

Tang Xin-Yue, Gao Hong, Pan Si-Ming, Sun Jian-Bo, Yao Xiu-Wei, Zhang Xi-Tian
PDF
导出引用
  • 采用化学气相沉积法合成了In掺杂ZnO纳米带,并对其进行了X射线衍射、光致发光及透射电镜表征. 基于单根纳米带,采用廉价微栅模板法制备了背栅场效应管,利用半导体参数测试仪测量了场效应管的输出(Ids-Vds)和转移(Ids-Vgs)特性,得出相关电学参数,其中迁移率值为622 cm2·V-1·s-1,该值明显优于包括ZnO在内的大多数材料;讨论了迁移率提高的可能原因.
    Back-gate field effect transistors based on In-doped ZnO individual nanobelts have been fabricated using the low-cost microgrid template method. The output (Ids-Vds) and transfer (Ids-Vgs) characteristic curves for the transistors are measured, and the mobility is derived to be 622 cm2· V-1· s-1. This value is obviously superior to those for most of materials including pure ZnO in the literature, and possible influence factors have also been discussed.
    • 基金项目: 国家自然科学基金(批准号:11074060,51172058)、黑龙江省教育厅科学技术重点研究项目(批准号:12521z012)和黑龙江省研究生创新科研项目(2013)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11074060, 51172058), the Key Project of the Science Technology and Research of Education Bureau, Heilongjiang Province, China (Grant No. 12521z012), and the Graduate Students' Scientific Research Innovation Project of Heilongjiang Province, China (2013).
    [1]

    Chen K J, Hung F Y, Chang S J, Hu Z S 2009 Appl. Surf. Sci. 255 6308

    [2]

    Huang Y H, Zhang Y, Gu Y S, Bai X D, Qi J J, Liao Q L, Liu J 2007 J. Phys. Chem. C 111 9039

    [3]

    Phillips J M, Cava R J, Thomas G A, Carter S A, Kwo J, Siegrist T, Krajewski J J, Marshall J H, Peck W F, Jr., Rapkine D H 1995 Appl. Phys. Lett. 67 2246

    [4]

    Kim K J, Park Y R 2001 Appl. Phys. Lett. 78 475

    [5]

    Su J, Li H F, Huang Y H, Xing X J, Zhao J, Zhang Y 2011 Nanoscale 3 2182

    [6]

    Ahmad M, Zhao J, Iqbal J, Miao W, Xie L, Mo R, Zhu J 2009 J. Phys. D: Appl. Phys. 42 165406

    [7]

    Li L M, Li C C, Zhang J, Du Z F, Zou B S, Yu H C, Wang Y G, Wang T H 2007 Nanotechnology 18 225504

    [8]

    Maeng J, Heo S, Jo G, Choe M, Kim S, Hwang H, Lee Takhee 2009 Nanotechnology 20 095203

    [9]

    Cha S N, Jang J E, Choi Y, Amaratunga G A J, Ho G W, Welland M E, Hasko D G, Kang D J, Kim J M 2006 Appl. Phys. Lett. 89 263102

    [10]

    Cheng Y, Xiong P, Fields L, Zheng J P, Yang R S, Wang Z L 2006 Appl. Phys. Lett. 89 093114

    [11]

    Kim D H, Cho N G, Kim H G, Cho W Y 2007 J. Electrochem. Soc. 154 H939

    [12]

    De D, Manongdo J, See S, Zhang V, Guloy A, Peng H 2013 Nanotechnology 24 025202

    [13]

    Li M, Zhang H Y, Guo C X, Xu J B, Fu X J 2009 Chin. Phys. B 18 1594

    [14]

    Jiang W, Gao H, Xu L L 2012 Chin. Phys. Lett. 29 037102

    [15]

    Lang Y, Gao H, Jiang W, Xu L L, Hou H T 2012 Sens. Actuators A 174 43

    [16]

    Li M J, Gao H, Li J L, Wen J, Li K, Zhang W G 2013 Acta Phys. Sin. 62 187302(in Chinese) [李铭杰, 高红, 李江禄, 温静, 李凯, 张伟光 2013 物理学报 62 187302]

    [17]

    Yuan Z, Gao H, Xu LL, Chen T T, Lang Y 2012 Acta Phys. Sin. 61 057201(in Chinese) [袁泽, 高红, 徐玲玲, 陈婷婷, 郎颖 2012 物理学报 61 057201]

    [18]

    Zhou J, Gu Y D, Hu Y F, Mai W J, Yeh P H, Bao G, Sood A K, Polla D L, Wang Z L 2009 Appl. Phys. Lett. 94 191103

    [19]

    Wan Q, Huang J, Lu A, Wang T H 2008 Appl. Phys. Lett. 93 103109

    [20]

    Jie J S, Wang G Z, Han X H, Yu Q X, Liao Y, Li G P, Hou J G 2004 Chem. Phys. Lett. 387 466

    [21]

    Jabeen M, Iqbal M A, Kumar R V, Ahmed M, Javed M T 2014 Chin. Phys. B 23 018504

    [22]

    Chen Y T, Cheng C L, Chen Y F 2008 Nanotechnology. 19 445707

    [23]

    Park W I, Kim J S, Yi G C, Bae M H, Lee H J 2004 Appl. Phys. Lett. 85 5052

    [24]

    Ma R M, Dai L, Huo H B, Yang W Q, Qin G G 2006 Appl. Phys. Lett. 89 203120

    [25]

    Fan Z Y, Wang D W, Chang P C, Tseng W Y, Lu J G 2004 Appl. Phys. Lett. 85 5923

    [26]

    Hsu C L, Tsai T Y 2011 J. Electrochem. Soc. 158 K20

    [27]

    Wu Y, Girgis E, Ström V, Voit W, Belova L, Rao K V 2011 Phys. Status Solidi A 208 206

    [28]

    Li S S, Zhang Z, Huang J Z, Feng X P, Liu R X 2011 Acta Phys. Sin. 60 097405(in Chinese) [李世帅, 张仲, 黄金昭, 冯秀鹏, 刘如喜 2011 物理学报 60 097405]

    [29]

    Shinde S S, Shinde P S, Bhosale C H, Rajpure K Y 2008 J. D: Appl. Phys. 41 105109

    [30]

    Fritz S E, Kelley T W, Frisbie C D 2005 J. Phys. Chem. B 109 10574

    [31]

    Yang H, Yang C, Kim S H, Jang M, Park C E 2010 ACS Appl. Mat. Interfaces 2 391

  • [1]

    Chen K J, Hung F Y, Chang S J, Hu Z S 2009 Appl. Surf. Sci. 255 6308

    [2]

    Huang Y H, Zhang Y, Gu Y S, Bai X D, Qi J J, Liao Q L, Liu J 2007 J. Phys. Chem. C 111 9039

    [3]

    Phillips J M, Cava R J, Thomas G A, Carter S A, Kwo J, Siegrist T, Krajewski J J, Marshall J H, Peck W F, Jr., Rapkine D H 1995 Appl. Phys. Lett. 67 2246

    [4]

    Kim K J, Park Y R 2001 Appl. Phys. Lett. 78 475

    [5]

    Su J, Li H F, Huang Y H, Xing X J, Zhao J, Zhang Y 2011 Nanoscale 3 2182

    [6]

    Ahmad M, Zhao J, Iqbal J, Miao W, Xie L, Mo R, Zhu J 2009 J. Phys. D: Appl. Phys. 42 165406

    [7]

    Li L M, Li C C, Zhang J, Du Z F, Zou B S, Yu H C, Wang Y G, Wang T H 2007 Nanotechnology 18 225504

    [8]

    Maeng J, Heo S, Jo G, Choe M, Kim S, Hwang H, Lee Takhee 2009 Nanotechnology 20 095203

    [9]

    Cha S N, Jang J E, Choi Y, Amaratunga G A J, Ho G W, Welland M E, Hasko D G, Kang D J, Kim J M 2006 Appl. Phys. Lett. 89 263102

    [10]

    Cheng Y, Xiong P, Fields L, Zheng J P, Yang R S, Wang Z L 2006 Appl. Phys. Lett. 89 093114

    [11]

    Kim D H, Cho N G, Kim H G, Cho W Y 2007 J. Electrochem. Soc. 154 H939

    [12]

    De D, Manongdo J, See S, Zhang V, Guloy A, Peng H 2013 Nanotechnology 24 025202

    [13]

    Li M, Zhang H Y, Guo C X, Xu J B, Fu X J 2009 Chin. Phys. B 18 1594

    [14]

    Jiang W, Gao H, Xu L L 2012 Chin. Phys. Lett. 29 037102

    [15]

    Lang Y, Gao H, Jiang W, Xu L L, Hou H T 2012 Sens. Actuators A 174 43

    [16]

    Li M J, Gao H, Li J L, Wen J, Li K, Zhang W G 2013 Acta Phys. Sin. 62 187302(in Chinese) [李铭杰, 高红, 李江禄, 温静, 李凯, 张伟光 2013 物理学报 62 187302]

    [17]

    Yuan Z, Gao H, Xu LL, Chen T T, Lang Y 2012 Acta Phys. Sin. 61 057201(in Chinese) [袁泽, 高红, 徐玲玲, 陈婷婷, 郎颖 2012 物理学报 61 057201]

    [18]

    Zhou J, Gu Y D, Hu Y F, Mai W J, Yeh P H, Bao G, Sood A K, Polla D L, Wang Z L 2009 Appl. Phys. Lett. 94 191103

    [19]

    Wan Q, Huang J, Lu A, Wang T H 2008 Appl. Phys. Lett. 93 103109

    [20]

    Jie J S, Wang G Z, Han X H, Yu Q X, Liao Y, Li G P, Hou J G 2004 Chem. Phys. Lett. 387 466

    [21]

    Jabeen M, Iqbal M A, Kumar R V, Ahmed M, Javed M T 2014 Chin. Phys. B 23 018504

    [22]

    Chen Y T, Cheng C L, Chen Y F 2008 Nanotechnology. 19 445707

    [23]

    Park W I, Kim J S, Yi G C, Bae M H, Lee H J 2004 Appl. Phys. Lett. 85 5052

    [24]

    Ma R M, Dai L, Huo H B, Yang W Q, Qin G G 2006 Appl. Phys. Lett. 89 203120

    [25]

    Fan Z Y, Wang D W, Chang P C, Tseng W Y, Lu J G 2004 Appl. Phys. Lett. 85 5923

    [26]

    Hsu C L, Tsai T Y 2011 J. Electrochem. Soc. 158 K20

    [27]

    Wu Y, Girgis E, Ström V, Voit W, Belova L, Rao K V 2011 Phys. Status Solidi A 208 206

    [28]

    Li S S, Zhang Z, Huang J Z, Feng X P, Liu R X 2011 Acta Phys. Sin. 60 097405(in Chinese) [李世帅, 张仲, 黄金昭, 冯秀鹏, 刘如喜 2011 物理学报 60 097405]

    [29]

    Shinde S S, Shinde P S, Bhosale C H, Rajpure K Y 2008 J. D: Appl. Phys. 41 105109

    [30]

    Fritz S E, Kelley T W, Frisbie C D 2005 J. Phys. Chem. B 109 10574

    [31]

    Yang H, Yang C, Kim S H, Jang M, Park C E 2010 ACS Appl. Mat. Interfaces 2 391

  • [1] 杨春林. 散斑场的随机波数及其参量非线性效应. 物理学报, 2024, 73(2): 024204. doi: 10.7498/aps.73.20231235
    [2] 王振宇, 李志雄, 袁怀洋, 张知之, 曹云姗, 严鹏. 磁子学中的拓扑物态与量子效应. 物理学报, 2023, 72(5): 057503. doi: 10.7498/aps.72.20221997
    [3] 邱钰珺, 李亨宣, 李亚涛, 黄春朴, 李卫华, 张旭涛, 刘英光. 基于纳米点嵌入的界面导热性能优化. 物理学报, 2023, 72(11): 113102. doi: 10.7498/aps.72.20230314
    [4] 陈舒越, 蒋闯, 柯少林, 王兵, 陆培祥. 基于Aharonov-Bohm笼的非厄米趋肤效应抑制现象. 物理学报, 2022, 71(17): 174201. doi: 10.7498/aps.71.20220978
    [5] 孙颖慧, 穆丛艳, 蒋文贵, 周亮, 王荣明. 金属纳米颗粒与二维材料异质结构的界面调控和物理性质. 物理学报, 2022, 71(6): 066801. doi: 10.7498/aps.71.20211902
    [6] 赵颂, 周华, 王淑英, 韩非, 蒋斯涵, 沈向前. 基于金属纳米球等离增强的高效钙钛矿/硅电池设计. 物理学报, 2022, 71(3): 038801. doi: 10.7498/aps.71.20211585
    [7] 宋飞龙, 王玉暖, 张峰, 武诗谣, 谢昕, 杨静南, 孙思白, 党剑臣, 肖姗, 杨龙龙, 钟海政, 许秀来. CH3NH3PbBr3纳米线中束缚激子g因子的各向异性. 物理学报, 2020, 69(16): 167102. doi: 10.7498/aps.69.20200646
    [8] 张亚菊, 谢忠帅, 郑海务, 袁国亮. Au-BiFeO3纳米复合薄膜的电学和光伏性能优化. 物理学报, 2020, 69(12): 127709. doi: 10.7498/aps.69.20200309
    [9] 李再东, 郭奇奇. 铁磁纳米线中磁化强度的磁怪波. 物理学报, 2020, 69(1): 017501. doi: 10.7498/aps.69.20191352
    [10] 田梓聪, 郭遗敏, 胡晨岩, 王慧琴, 路翠翠. 宽带高效聚焦的片上集成纳米透镜. 物理学报, 2020, 69(24): 244201. doi: 10.7498/aps.69.20200948
    [11] 马堃, 陈展斌, 黄时中. 等离子体屏蔽效应对Ar16+基态和激发态能级的影响. 物理学报, 2019, 68(2): 023102. doi: 10.7498/aps.68.20181915
计量
  • 文章访问数:  4121
  • PDF下载量:  2531
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-03-27
  • 修回日期:  2014-05-24
  • 刊出日期:  2014-10-05

/

返回文章
返回