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探索功能材料光电性能优化的有效途径对于新一代光电子器件的发展至关重要。然而现有调控策略常存在工艺复杂等问题，且一维过渡金属硫族化合物（ TMDs）在极端条件下的结构演化与光电性能提升的内在关系尚不明确，制约了光电性能的进一步提升。本研究通过压力调控实现了WS2纳米管（ NT-WS2）光电响应特性的显著增强。在13.5 GPa压力下，器件响应度提升至43.75 A/W，较初始值提高近2个数量级，外量子效率和比探测率也分别提高约67倍和10倍。高压原位X射线衍射与拉曼光谱结果表明，NT-WS2光电性能的提升源于压力下层间作用增强导致的带隙收缩，以及纳米管致密堆积改善了载流子输运性能。本工作不仅深化了一维TMDs在极端条件下光电演化规律的理解，也为高性能纳米光电子器件的设计与优化提供了新的思路。Exploring effective approaches to optimize the photoelectronic properties of functional materials is crucial for advancing next-generation optoelectronic devices. However, existing modulation strategies are frequently plagued by drawbacks including complex fabrication processes. However, conventional regulation approaches often suffer from complex processing, and the intrinsic relationship between structural evolution and performance enhancement in one-dimensional transition-metal dichalcogenides (TMDs) under extreme conditions remains elusive, hindering further performance improvement. In this study, high pressure is employed as a continuously tunable and clean external field to regulate the structural and photoelectric properties of one-dimensional transition-metal dichalcogenide nanotubes (NT-WS2). Utilizing a diamond anvil cell (DAC) combined with in situ high-pressure photocurrent measurements, Raman spectroscopy, and X-ray diffraction (XRD), we systematically investigated the pressure- dependent evolution of the crystal structure and photoelectric performance.The results demonstrate a remarkable pressure-driven enhancement in the optoelectronic response of NT- WS2. With increasing pressure, the device responsivity exhibits a dramatic rise from the initial 0.53 A/W to 43.75 A/W at 13.5 GPa—nearly two orders of magnitude higher. Correspondingly, the external quantum efficiency (EQE) and specific detectivity (D*) are enhanced by approximately 67-fold and 10-fold, respectively. The synergistic in situ spectroscopic and structural analyses reveal that this pronounced improvement originates from pressure-induced bandgap narrowing due to strengthened interlayer interactions, together with improved carrier transport facilitated by the compact stacking of nanotubes. This work not only deepens the understanding of the optoelectronic evolution mechanisms of 1D TMDs under extreme conditions but also provides a novel regulatory strategy to guide the design and optimization of high-performance nano-optoelectronic devices.
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Keywords:
- High Pressure /
- Transition Metal Dichalcogenides /
- Nanotube /
- photoelectric response
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