Transport process and energy loss of heavy ions in silicon carbide

Zhang Hong; Guo Hong-Xia; Pan Xiao-Yu; Lei Zhi-Feng; Zhang Feng-Qi; Gu Zhao-Qiao; Liu Yi-Tian; Ju An-An; Ouyang Xiao-Ping

doi:10.7498/aps.70.20210503

Abstract

Using the Monte Carlo method, the energy losses in silicon carbide of heavy ions with different linear energy transfers (LETs) are simulated and calculated. The simulation results show that the energy loss per unit depth of heavy ions in silicon carbide is affected by both the ion energy and the incident depth. Primary heavy ions and secondary electrons mainly cause energy loss, and the non-ionization energy loss only accounts for about 1% of the total energy loss. With the increase of LET, the initial angle and energy distribution of the secondary electrons become more and more concentrated. The peak position of the generated charge deposition is in the center of the heavy-ion track, and the distribution is linearly decreasing in Gaussian form in the direction perpendicular to the incident depth. In the californium source experiment of SiC MOSFET, when the drain voltage is 480 V, the device has a single event burnout, and the breakdown voltage of SiC MOSFET is less than 1 V after burnout has occurred. With the experimental results, we carry out the TCAD simulation of SiC MOSFET and obtain the electric field distribution inside the device under different drain voltages. The electric field parameters are used in the Monte Carlo simulation of SiC MOSFET with considering the metal layer. It is found in the Monte Carlo simulation that the greater the electric field of the epitaxial layer, the longer the path of heavy ions moving on the epitaxial layer is and the more the deposited energy, and that the secondary electrons are more likely to move in the direction of the electric field as the electric field increases, resulting in excessive energy deposition in local areas.

Keywords:

Authors and contacts

1.
School of Material Science and Engineering, Xiangtan University, Xiangtan 411105, China
2.
Northwest Institute of Nuclear Technology, Xi’an 710024, China
3.
State Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, CEPREI, Guangzhou 510610 China

Corresponding author: Guo Hong-Xia, guohongxia@nint.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11875229)

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References

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Cited By

图 1 不同LET的重离子入射碳化硅的径迹分布　(a) 34.08 MeV·cm²/mg; (b) 44.73 MeV·cm²/mg; (c) 69.72 MeV·cm²/mg

Figure 1. Track distribution of heavy ions with different LET incident on silicon carbide: (a) 34.08 MeV·cm²/mg; (b) 44.73 MeV·cm²/mg; (c) 69.72 MeV·cm²/mg

DownLoad: Full-Size Img PowerPoint

图 2 不同LET的重离子产生的能量损失随入射深度的变化

Figure 2. The energy loss of heavy ions with different LET changes with the depth of incidence.

DownLoad: Full-Size Img PowerPoint

图 3 不同粒子造成的能量沉积随LET的变化

Figure 3. Variation of energy deposition caused by different particles with LET.

DownLoad: Full-Size Img PowerPoint

图 4 不同LET下总能量损失的空间分布　(a) 34.08 MeV·cm²/mg; (b) 44.73 MeV·cm²/mg; (c) 69.72 MeV·cm²/mg

Figure 4. Spatial distribution of total energy loss under different LET: (a) 34.08 MeV·cm²/mg; (b) 44.73 MeV·cm²/mg; (c) 69.72 MeV·cm²/mg.

DownLoad: Full-Size Img PowerPoint

图 5 不同LET下次级电子径迹的空间分布:　(a) 34.08 MeV·cm²/mg; (b) 44.73 MeV·cm²/mg; (c) 69.72 MeV·cm²/mg

Figure 5. Spatial distribution of electron tracks under different LET: (a) 34.08 MeV·cm²/mg; (b) 44.73 MeV·cm²/mg; (c) 69.72 MeV·cm²/mg

DownLoad: Full-Size Img PowerPoint

图 6 不同LET下次级电子的初始能量及角度分布:　(a) 34.08 MeV·cm²/mg; (b) 44.73 MeV·cm²/mg; (c) 69.72 MeV·cm²/mg

Figure 6. The initial kinetic energy and angle distribution of secondary electron under different LET: (a) 34.08 MeV·cm²/mg; (b) 44.73 MeV·cm²/mg; (c) 69.72 MeV·cm²/mg

DownLoad: Full-Size Img PowerPoint

图 7 总能量损失在碳化硅中的时间分布随LET的变化

Figure 7. Time distribution of total energy loss in SiC as a function of LET.

DownLoad: Full-Size Img PowerPoint

图 8 非电离能量损失在碳化硅中的时间分布随LET的变化

Figure 8. The time distribution of non-ionizing energy loss in SiC varies with LET.

DownLoad: Full-Size Img PowerPoint

图 9 不同LET下碳化硅中的非电离能量损失随深度的变化

Figure 9. The non-ionizing energy loss in SiC varies with depth under different LET.

DownLoad: Full-Size Img PowerPoint

图 10 不同LET下电荷沉积在垂直于重离子径迹方向的分布

Figure 10. Distribution of charge deposition perpendicular to the direction of heavy ion tracks under different LET.

DownLoad: Full-Size Img PowerPoint

图 11 单粒子效应试验电路图

Figure 11. Single event effect test circuit diagram.

DownLoad: Full-Size Img PowerPoint

图 12 碳化硅MOSFET单粒子烧毁特征　(a)烧毁时瞬态漏电流剧增; (b)击穿特性丧失

Figure 12. SEB characteristics of silicon carbide MOSFET: (a) Transient leakage current increases sharply when burned out; (b) loss of breakdown characteristics.

DownLoad: Full-Size Img PowerPoint

图 13 不同漏极偏压下碳化硅MOSFET内部的电场分布　(a)二维分布; (b)一维分布

Figure 13. The electric field distribution inside the silicon carbide MOSFET under different drain bias voltages: (a) Two-dimensional distribution; (b) one-dimensional distribution.

DownLoad: Full-Size Img PowerPoint

图 14 碳化硅MOSFET内部结构示意图　(a)切片分析结果; (b)Geant4仿真模型

Figure 14. Schematic diagram of the internal structure of silicon carbide MOSFET: (a) Slice analysis results; (b) Geant4 simulation model.

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图 15 不同漏极偏置电压下碳化硅MOSFET外延层的能量沉积分布　(a)V_Drain = 0 V; (b)V_Drain = 480 V; (c)V_Drain = 1000 V

Figure 15. Energy deposition distribution of epitaxial layer of silicon carbide MOSFET under different drain bias voltage: (a) V_Drain = 0 V; (b) V_Drain = 480 V; (c) V_Drain = 1000 V.

DownLoad: Full-Size Img PowerPoint

表 1 选取的重离子种类、能量及其在材料中的射程

Table 1. Selected heavy ion, energy and range of heavy ions in silicon carbide.

重离子	能量/MeV	SiC中射程/μm@SRIM	SiC中射程/μm@Geant4	SiC中LET /(MeV·cm²·mg^–1)	Si中LET /(MeV·cm²·mg^–1)
铜 (Cu⁺)	212	22.01	21.5	34.08	32.2
溴 (Br⁺)	218	19.97	18.5	44.73	42
碘 (I⁺)	270	19.21	16.5	69.72	65

DownLoad: CSV

[1]	Elasser A, Chow T P 2002 Proc. IEEE 90 969 Google Scholar
[2]	Johnson C M, Wright N G, Uren M J, Hilton K P, Rahimo M, Hinchley D A, Knights A P, Morrison D J, Horsfall A B, Ortolland S, O’Neill A G 2001 IEE Proc.: Circuits Devices Syst. 148 101 Google Scholar
[3]	Cooper, Jr J A 1997 Phys. Status Solidi A 162 305 Google Scholar
[4]	周拥华, 张义门, 张玉明, 孟祥志 2004 物理学报 11 3710 Google Scholar Zhou Y H, Zhang Y M, Zhang Y M, Meng X Z 2004 Acta Phys. Sin. 11 3710 Google Scholar
[5]	秦希峰, 梁毅, 王凤翔, 李双, 付刚, 季艳菊 2011 物理学报 60 066101 Google Scholar Qin X F, Liang Y, Wang F X, Li S, Fu G, Ji Y J 2011 Acta Phys. Sin. 60 066101 Google Scholar
[6]	Zhang X 2013 Ph. D. Dissertation (Nashville: Vanderbilt University)
[7]	白玉新, 刘俊琴, 李雪, 曹英健, 张建国, 仲悦 2011 航天标准化 03 10 Google Scholar Bai Y X, Liu J Q, Li X, Cao Y J, Zhang J G, Zhong Y 2011 Aerospace Standardization 03 10 Google Scholar
[8]	张林, 张义门, 张玉明, 韩超, 马永吉 2009 物理学报 58 2737 Google Scholar Zhou L, Zhang Y M, Zhang Y M, Han C, Man Y J 2009 Acta Phys. Sin. 58 2737 Google Scholar
[9]	Messenger S R, Burke E A, Summers G P, Xapsos M A, Walters R J, Jackson E M, Weaver B D 1999 IEEE Trans. Nucl. Sci. 46 1595 Google Scholar
[10]	Messenger S R, Burke E A, Xapsos M A, Summers G P, Walters R J, Jun I 2003 IEEE Trans. Nucl. Sci. 50 1919 Google Scholar
[11]	Mizuta E, Kuboyama S, Abe H, Iwata Y, Tamura T 2014 IEEE Trans. Nucl. Sci. 61 1924 Google Scholar
[12]	Witulski A F, Arslanbekov R, Raman A, Schrimpf R D, Sternberg A L, Galloway K F, Javanainen A, Grider D, Lichtenwalner D J, Hull B 2017 IEEE Trans. Nucl. Sci. 65 256 Google Scholar
[13]	Javanainen A, Galloway K F, Nicklaw C, Bosser A L, Cavrois V F, Lauenstein J M, Pintacuda F, Reed R A, Schrimpf R D, Weller R A, Virtanen A 2016 IEEE Trans. Nucl. Sci. 64 415 Google Scholar
[14]	Javanainen A, Turowski M, Galloway K F, Nicklaw C, Cavrois V F, Bosser A, Lauenstein J M, Muschitiello M, Pintacuda F, Reed R A, Schrimpf R D, Weller R A, Virtanen A 2017 IEEE Trans. Nucl. Sci. 64 2031 Google Scholar
[15]	于庆奎, 曹爽, 张洪伟, 梅博, 孙毅, 王贺, 李晓亮, 吕贺, 李鹏伟, 唐民 2019 原子能科学技术 53 2114 Google Scholar Yu Q K, Cao S, Zhang H W, Mei B, Sun Y, Wang H, Li X L, Lv H, Li P W, Tang M 2019 Atom. Energ. Sci. Technol. 53 2114 Google Scholar
[16]	郭达禧, 贺朝会, 臧航, 席建琦, 马梨, 杨涛, 张鹏 2013 原子能科学技术 47 1222 Google Scholar Guo D X, He C H, Zang H, Xi J Q, Ma L, Yang T, Zhang P 2013 Atom. Energ. Sci. Technol. 47 1222 Google Scholar
[17]	陈世彬, 张义门, 陈雨生, 黄流兴, 张玉明 2001 高能物理与核物理 25 365 Google Scholar Chen S B, Zhang Y M, Chen Y S, Huang L X, Zhang Y M 2001 High Energ. Phys. Nucl. 25 365 Google Scholar
[18]	申帅帅, 贺朝会, 李永宏 2018 物理学报 67 182401 Google Scholar Shen S S, He C H, Li Y H 2018 Acta Phys. Sin. 67 182401 Google Scholar
[19]	Kuboyama S, Kamezawa C, Ikeda N, Hirao T, Ohyama H 2006 IEEE Trans. Nucl. Sci. 53 3343 Google Scholar
[20]	Kuboyama S, Kamezawa C, Satoh Y, Hirao T, Ohyama H 2007 IEEE Trans. Nucl. Sci. 54 2379 Google Scholar
[21]	Casey M C, Lauenstein J M, Topper A D, Wilcox E P, Kim H, Phan A M, LaBel K A 2012 The 3rd Annual NEPP Electronic Technology Workshop, Greenbelt, Maryland, USA, June 11−13, 2012 p561
[22]	Lauenstein J M, Casey M C, LaBel K A, Topper A D, Wilcox E P, Kim H, Phan A M 2014 The 5th Annual NEPP Electronic Technology Workshop, Greenbelt, Maryland, USA, June 17−19, 2014 p561
[23]	Abbate C, Busatto G, Cova P, Delmonte N, Giuliani F, Iannuzzo F, Sanseverino A, Velardi F 2014 Microelectron. Reliab. 54 2200 Google Scholar
[24]	Ziegler J F, Ziegler M D, Biersack J P 2010 Nucl. Instrum. Methods Phys. Res., Sect. B 268 1818 Google Scholar
[25]	Evseev I G, Schelin H R, Paschuk S A, Milhoretto E, Setti J A P, Yevseyeva O, Assis J T, Hormaza J M, Dıáz K S, Lopes R T 2010 Appl. Radiat. Isot. 68 948 Google Scholar
[26]	Guide for physics Lists, Collaboration G https://geant4-userdoc.web.cern.ch/UsersGuides/PhysicsListGuide/html/index.html/ [2021-4-15]
[27]	Physics reference manual, Collaboration G https://geant4-userdoc.web.cern.ch/UsersGuides/PhysicsReferenceManual/html/index.html/ [2021-4-15]
[28]	Berger M J, Inokuti M, Andersen H H, Bichsel H, Powers D, Seltzer S M, Thwaites D, Watt D E 1993 J. Int. Commission Radiat. Units Meas. 25 49
[29]	侯东明, 刘杰, 孙友梅, 姚会军, 段敬来, 尹经敏, 莫丹, 张苓, 陈艳峰 2008 原子能科学技术 07 622 Google Scholar Hou D M, Liu J, Sun Y M, Yao H J, Duan J L, Yin J M, Mo D, Zhang L, Chen Y F 2008 Atom. Energ. Sci. Technol. 07 622 Google Scholar
[30]	Hu P P, Liu J, Zhang S X, Maaz K, Zeng J, Zhai P F, Xu L J, Cao Y R, Duan J L, Li Z Z, Sun M Y, Ma X H 2018 Nucl. Instrum. Methods Phys. Res., Sect. B 430 59 Google Scholar
[31]	Ball D R, Galloway K F, Johnson R A, Alles M L, Sternberg A L, Sierawski B D, Witulski A F, Reed R A, Schrimpf R D, Hutson J M, Javanainen A, Lauenstein J M 2019 IEEE Trans. Nucl. Sci. 67 22 Google Scholar

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