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2022, 71(4): 044301.
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2009, 58(4): 2737-2741.
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Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin. Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica,
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Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming, Che Yong, Wang Yue-Hu, Chen Liang. The extraction method for trap parameters in 4H-SiC MESFETs. Acta Physica Sinica,
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Nie Hai, Zhang Bo, Tang Xian-Zhong. Electroluminescence of polymer doped small-molecules light-emitting diodes and the effects of doping trap. Acta Physica Sinica,
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia. Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica,
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2000, 49(7): 1241-1248.
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