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Electric-pulse-induced resistances (EPIRs) and I-V characteristics of polycrystalline Nd1-xAxMnO3 (A = Ca, Ba, Sr, x = 0-0.9) ceramics synthesized by solid state reaction are investigated. The results show that similar to Nd0.7Sr0.3MnO3, compounds Nd0.7Ba0.3MnO3 and Nd0.7Ca0.3MnO3, with the same doped concentration as that of Nd0.7Sr0.3MnO3, can also exhibit a nonlinear I-V behaviour and a stable EPIR effect at room temperature. Further studies on the Nd1-xSrxMnO3 series indicate that the stability of EPIR is closely correlated with the Sr doped concentration. Around the half doping x= 0.5, the EPIR effect can be observed stably. With Sr concentration increasing or decreasing, however, the EPIR becomes weaker gradually and disappears completely if Sr concentration further increases or decreases. The redistribution of various defects between the electrode and bulk interface with polar pulses is proposed to explain the unique transport behaviour.
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Keywords:
- electric-pulse-induced resistance /
- deep-level trap defects /
- manganite /
- I-V nonlinearity
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[2] Kanamori J 1960 J. Appl. Phys. 31 14S
[3] Jonker G H, van Santen J H 1950 Physica 16 337
[4] Jahn H A, Teller E 1937 Proc. Roy. Soc. A 161 220
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[16] Kim D C, Seo S, Ahn S E, Suh D S, Lee M J, Park B H, Yoo I K, Baek I G, Kim H J, Yim E K, Lee J E, Park S O, Kim H S, Chung U I, Moon J T, Ryu B I 2006 Appl. Phys. Lett. 88 202102
[17] Sawa A, Fujii T, Kawasaki M, Tokura Y 2004 Appl. Phys. Lett. 18 4073
[18] Yang R, Li M X, Yu W D, Gao X D, Shang D S, Liu X J, Cao X, Wang Q, Chen L D 2009 Appl. Phys. Lett. 95 072105
[19] Baikalov A, Wang Y Q, Shen B, Lorenz B, Tsui S, Sun Y Y, Xue Y Y, Chu C W 2003 Appl. Phys. Lett. 83 957
[20] Shang D S, Wang Q, Chen L D, Dong R, Li X M, Zhang W Q 2006 Phys. Rev. B 73 245427
[21] Aoyama K, Waku K, Asanuma A, Uesu Y, Katsufuji T 2004 Appl. Phys. Lett. 85 1208
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[24] Chen S S, Yang C P, Ren C L, Wang R L, Wang H, Medvedeva I V, Baerner K 2011 Bull. Mater. Sci. 34 1
[25] Chen S S, Huang C, Wang R L, Yang C P, Medvedeva I V, Sun Z G 2011 Acta Phys. Sin. 60 037304 (in Chinese) [陈顺生, 黄昌, 王瑞龙, 杨昌平, Medvedeva I V, 孙志刚 2011 物理学报 60 037304]
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[28] Tarashita H, Neumeier J J 2005 Phys. Rev. B 71 134420
[29] Chen P, Du Y W 2005 Chin. J. Phys. 39 357
[30] Reinaldo Azevedo Vargas, Rubens Chiba, Marco Andreoli, Emilia Satoshi Miyamaru Seo 2010 Mater. Sci. Forum 660-661 1113
[31] Woodward P M, Cox D E, Vogt T, Rao C N R, Cheetham A K 1999 Chem. Mater. 11 3528
[32] Zhang T, Su Z H, Chen H J, Ding L H, Zhang W F 2008 Appl. Phys. Lett. 93 172104
[33] Xie Y W, Sun J R, Wang D J, Liang S, Shen B G 2006 J. Appl. Phys. 100 033704
[34] Morchshakov V, Annaorazov M P, Aybar H S, Yang C P, Troyanchuk I O, Barner K 2009 J. Appl. Phys. 105 063704
[35] Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (the 7th edition) (Beijing: Publishing House of Electronics Industry) pp63-70 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2008 半导体物理学(第7版)(北京:电子工业出版社) 第63—70页]
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[1] Zener C 1951 Phys. Rev. 82 403
[2] Kanamori J 1960 J. Appl. Phys. 31 14S
[3] Jonker G H, van Santen J H 1950 Physica 16 337
[4] Jahn H A, Teller E 1937 Proc. Roy. Soc. A 161 220
[5] Tan G T , Chen Z H, Zhang X Z 2005 Acta Phys. Sin. 54 379 (in Chinese) [谈国太, 陈正豪, 章晓中 2005 物理学报 54 379]
[6] Coey M 2005 Nature Mater. 4 9
[7] Wang S B, Zhang J C, Cao G X, Yu J, Jing C, Cao S X 2006 Acta Phys. Sin. 55 367 (in Chinese) [王仕鹏, 张金仓, 曹桂新, 俞坚, 敬超, 曹世勋 2006 物理学报 55 367]
[8] Li B H, Xianyu W X, Wan X, Zhang J, Shen B G 2000 Acta Phys. Sin. 49 1366 (in Chinese) [李宝河, 鲜于文旭, 万欣, 张健, 沈保根 2000 物理学报 49 1367]
[9] Yang C P, Chen S S, Dai Q, Guo D H, Wang H 2007 Acta Phys. Sin. 56 4908 (in Chinese) [杨昌平, 陈顺生, 戴琪, 郭定和, 王浩 2007 物理学报 56 4908]
[10] Chen S S, Yang C P, Deng H, Sun Z G 2008 Acta Phys. Sin. 57 3798 (in Chinese) [陈顺生, 杨昌平, 邓恒, 孙志刚 2008 物理学报 57 3798]
[11] Chen S S, Yang C P, Wang H, Medvedeva I V, Bärner K 2010 Mat. Sci. Eng. B 172 167
[12] Liu S Q, Wu N J, Ignative A 2000 Appl. Phys. Lett. 76 2749
[13] Tsui S, Baikalov A, Cmaidalka J, Sun Y Y, Wang Y Q, Xue Y Y, Chu C W, Chen L, Jacobson A J 2004 Appl. Phys. Lett. 85 317
[14] Odagawa A, Sato H, Inoue I H, Akoh H, Kawasaki M, Tokura Y, Kanno T, Adachi H 2004 Phys. Rev. B 70 224403
[15] Rozenberg M J, Inoue I H, Sanchez M J 2004 Phys. Rev. Lett. 92 178302
[16] Kim D C, Seo S, Ahn S E, Suh D S, Lee M J, Park B H, Yoo I K, Baek I G, Kim H J, Yim E K, Lee J E, Park S O, Kim H S, Chung U I, Moon J T, Ryu B I 2006 Appl. Phys. Lett. 88 202102
[17] Sawa A, Fujii T, Kawasaki M, Tokura Y 2004 Appl. Phys. Lett. 18 4073
[18] Yang R, Li M X, Yu W D, Gao X D, Shang D S, Liu X J, Cao X, Wang Q, Chen L D 2009 Appl. Phys. Lett. 95 072105
[19] Baikalov A, Wang Y Q, Shen B, Lorenz B, Tsui S, Sun Y Y, Xue Y Y, Chu C W 2003 Appl. Phys. Lett. 83 957
[20] Shang D S, Wang Q, Chen L D, Dong R, Li X M, Zhang W Q 2006 Phys. Rev. B 73 245427
[21] Aoyama K, Waku K, Asanuma A, Uesu Y, Katsufuji T 2004 Appl. Phys. Lett. 85 1208
[22] Chen S S 2010 MS Dissertation (Wuhan: Hubei University) (in Chinese) [陈顺生 2010 硕士学位论文 (武汉:湖北大学)]
[23] Chen S S, Yang C P, Xu L F, Yang F J, Wang H B, Wang H, Xiong L B, Yu Y, Medvedeva I V, Bärner K 2010 Solid State Commun. 150 240
[24] Chen S S, Yang C P, Ren C L, Wang R L, Wang H, Medvedeva I V, Baerner K 2011 Bull. Mater. Sci. 34 1
[25] Chen S S, Huang C, Wang R L, Yang C P, Medvedeva I V, Sun Z G 2011 Acta Phys. Sin. 60 037304 (in Chinese) [陈顺生, 黄昌, 王瑞龙, 杨昌平, Medvedeva I V, 孙志刚 2011 物理学报 60 037304]
[26] Yang C P, Chen S S, Dai Q, Song X P 2011 Acta Phys. Sin. 60 117202 (in Chinese) [杨昌平, 陈顺生, 戴琪, 宋学平 2011 物理学报 60 117202]
[27] Pattabiraman M, Murugaraj P, Rangarajan G, Dimitropoulos C, Ansermet J P, Papavassiliou G, Balakrishnan G, Paul D M, Lees M R 2002 Phys. Rev. B 66 224415
[28] Tarashita H, Neumeier J J 2005 Phys. Rev. B 71 134420
[29] Chen P, Du Y W 2005 Chin. J. Phys. 39 357
[30] Reinaldo Azevedo Vargas, Rubens Chiba, Marco Andreoli, Emilia Satoshi Miyamaru Seo 2010 Mater. Sci. Forum 660-661 1113
[31] Woodward P M, Cox D E, Vogt T, Rao C N R, Cheetham A K 1999 Chem. Mater. 11 3528
[32] Zhang T, Su Z H, Chen H J, Ding L H, Zhang W F 2008 Appl. Phys. Lett. 93 172104
[33] Xie Y W, Sun J R, Wang D J, Liang S, Shen B G 2006 J. Appl. Phys. 100 033704
[34] Morchshakov V, Annaorazov M P, Aybar H S, Yang C P, Troyanchuk I O, Barner K 2009 J. Appl. Phys. 105 063704
[35] Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (the 7th edition) (Beijing: Publishing House of Electronics Industry) pp63-70 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2008 半导体物理学(第7版)(北京:电子工业出版社) 第63—70页]
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