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He离子辐照6H-SiC引入缺陷的光谱研究

杜洋洋 李炳生 王志光 孙建荣 姚存峰 常海龙 庞立龙 朱亚滨 崔明焕 张宏鹏 李远飞 王霁 朱卉平 宋鹏 王栋

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Citation:

He离子辐照6H-SiC引入缺陷的光谱研究

杜洋洋, 李炳生, 王志光, 孙建荣, 姚存峰, 常海龙, 庞立龙, 朱亚滨, 崔明焕, 张宏鹏, 李远飞, 王霁, 朱卉平, 宋鹏, 王栋

Spectra study of He-irradiation induced defects in 6H-SiC

Du Yang-Yang, Li Bing-Sheng, Wang Zhi-Guang, Sun Jian-Rong, Yao Cun-Feng, Chang Hai-Long, Pang Li-Long, Zhu Ya-Bin, Cui Ming-Huan, Zhang Hong-Peng, Li Yuan-Fei, Wang Ji, Zhu Hui-Ping, Song Peng, Wang Dong
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  • 实验采用300 keV的He2+辐照6H-SiC,辐照温度分别为室温,450,600和750 ℃,辐照剂量范围为1101511017 cm-2,辐照完成后对样品进行拉曼散射和紫外可见透射光谱测试与研究. 这两种分析方法的实验结果表明,He离子辐照产生的缺陷以及缺陷的恢复与辐照剂量和辐照温度有着直接关系. 室温下辐照会使晶体出现非晶化,体现在拉曼特征峰消失,相对拉曼强度达到饱和(同时出现了较强的Si-Si峰);高温下辐照伴随着晶体缺陷的恢复过程,当氦泡未存在时,高温辐照很容易导致Frenkel对、缺陷团簇等缺陷恢复,当氦泡存在时,氦泡会抑制缺陷恢复,体现在相对拉曼强度和相对吸收系数曲线斜率的变化趋势上. 本文重点讨论了高温辐照情况下氦泡对缺陷聚集与恢复的影响,并与高温下硅离子辐照碳化硅结果进行了对比.
    Specimens of 6H-SiC were irradiated by 300keV He ions at temperatures of RT, 450, 600 and 750 ℃ with fluences ranging from 11015 to 11017 cm-2. Post-irradiation, virgin and irradiated 6H-SiC specimens are measured and studied by microscopic laser confocal Raman spectrometer and UV-visible transmission apparatus. Analyses of both experimental results shown that production and recovery of defects caused by irradiation are directly related to the fluences and temperatures. Amorphization of 6H-SiC irradiated at RT occurrs, which is reflected by the disappearance of the Raman peaks and the saturation of the relative Raman intensity(simultaneously a strong Si-Si peak appears). Recovery of defects may exist in high-temperature irradiation, when helium bubbles do not exist, so that irradiation-induced defects can be easily recovered during irradiation process at elevated temperatures; but when helium bubbles are present, they can inhibit defects to recover, as shown in the trend of slopes of curves representing the relative Raman intensity and the relative absorption coefficients. This paper mainly focuses on the effects of helium bubbles on defect accumulation and recovery under the condition of high temperature irradiation, and then the comparison with the results of 6H-SiC irradiated by Si ions at elevated temperatures.
    • 基金项目: 国家重点基础研究发展计划(973计划)(批准号:2010cB832902)和国家自然科学基金 (批准号:11005130,11105190,11475229,91126011) 资助的课题.
    • Funds: Project supported by the National Basic Research Program of China (973 Program) (Grant No. 2010cB832902), and the National Natural Science Foundation of China (Grant Nos. 11005130, 11105190, 11475229, 91126011).
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    Zhang H H, Zhang C H, Li B S, Zhou L H, Yang Y T, Fu Y C 2009 Acta Phys. Sin. 58 3302 (in Chinese) [张洪华, 张崇宏, 李炳生, 周丽宏, 杨义涛, 付云翀 2009 物理学报 58 3302]

    [2]

    Xu C L, Zhang C H, Li B S, Zhang L Q, Yang Y T, Han L H, Jia X J 2011 Nuclear Physica Review 28 209 (in Chinese) [徐超亮, 张崇宏, 李炳生, 张丽卿, 杨义涛, 韩录会, 贾秀军 2011 原子核物理评论 28 209]

    [3]
    [4]

    Xu P S, Xie C K, Pan H B, Xu F Q 2004 Chin. Phys. 13 2126

    [5]
    [6]

    Qin X F, Wang F X, Liang Y, Fu G, Zhao Y M 2010 Acta Phys. Sin. 59 6390 (in Chinese) [秦希峰, 王凤翔, 梁毅, 付刚, 赵优美 2010 物理学报 59 6390]

    [7]
    [8]
    [9]

    Zhang C H, Sun Y M, Song Y 2007 Nucl Instr and Meth B 256 243

    [10]
    [11]

    Zhang Y, Zhang C H, Zhou L H 2010 Acta Phys. Sin. 59 4130 (in Chinese) [张勇, 张崇宏, 周丽宏 2010 物理学报 59 4130]

    [12]
    [13]

    Edmond J A, Withrow S P, Kong H S, Davis R F 1986 Mater. Res. Soc. Proc. 51 395

    [14]
    [15]

    Heera V, Stoemenos J, Kogler R, Skorupa W 1995 J. Appl. Phys. 77 2999

    [16]

    Beaufort M F, Pailloux F, DeclemyA, Barbot J F 2003 J. Appl. Phys. 94 7116

    [17]
    [18]

    Zhang C H, Song Y, Yang Y T, Zhou C L, Wei L, Ma H J 2014 Nucl. Instrum. Methods Phys. Res. B 326 345

    [19]
    [20]
    [21]

    Dong L, Sun G S, Yu J, Zheng L, Liu X F, Zhang F, Yan G G, Li X G, Wang Zh G, Yang F 2013 Chin. Phys. Lett. 30 096105

    [22]
    [23]

    Grisola J, de Mauduit B, Gimbert J, Billon Th, Ben Assayag G, Bourgerette C, Claverie A 1999 Nucl. Instrum. Methods Phys. Res. B 147 62

    [24]

    Heera V, Stoemenos J, Kogler R, Voelskow M, Skorupa W 1999 J. Appl. Phys. 85 1378

    [25]
    [26]

    Persson P O A, Hultman L, Janson M S, Hallen A, Yakimova R, Pankin DSkorupa W 2002 J. Appl. Phys. 92 2501

    [27]
    [28]

    Zhu W, Ruan Y F, Chen J, Ma P F, Wang P F, Huang L 2012 Bulletin Of The Chinese Ceramic Society 31 386 (in Chinese) [祝威, 阮永丰, 陈敬, 马鹏飞, 王鹏飞, 黄丽 2012 硅酸盐通报 31 386]

    [29]
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    Wang C, Zhang Y M, Zhang Y M 2007 Chin. Phys. 16 1417

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    Cheng P, Zhang Y M, Zhang Y M, Guo H 2010 Chin. Phys. B 19 097802

    [34]

    Snead L L, Zinkle S J 1995 Mater. Res. Soc. Proc. 373 377

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    Zinkle S J, Snead L L 1996 Nucl. Instrum. Methods Phys. Res. B 116 92

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    Wendler E, Heft A, Wesch W 1998 Nucl. Instrum. Methods Phys. Res. B 141 105

    [42]

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    Heft A, Wendler E, Heindl J, Bachmann T, Glaser E, Strunk H P, Wesch W 1996 Nucl. Instrum. MethodsPhys. Res. B 113 239

    [45]
    [46]

    Pacaud Y, Stoemenos J, Brauer G, Yankov R A, Heera V, Voelskow M, Kogler R, Skorupa W 1996 Nucl. Instrum. Methods Phys. Res. B 120 177

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    [48]

    Hofgen A, Heera V, Eicchorn F, Skorupa W 1998 J. Appl. Phys. 84 4769

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    [50]

    Bus T, van Veen A, Shiryaev A, Fedorov A V, Schut H, Tichelaar F D, Sietsma J 2003 Mater. Sci. Eng. B 102 269

    [51]
    [52]

    Debelle A, Backman M, Thom L, Nordlund K, Djurabekova F, Weber W J, Monnet I, Pakarinen O H, Garrido F, Paumier F 2014 Nucl. Instrum. Methods. Phys. Res. B 326 326

    [53]
    [54]
    [55]

    Helf A, Wendler E, Bachmann T, Glaser E, Wesch W 1995 Mater. Eng. B 29 142

    [56]

    Helf A, Wendler E, Heindl J, Bachmann T, Glaser E, Strunk H P. Wesch W 1996 Nucl. Instrum. Meth. Phys. Res. B 113 239

    [57]
    [58]

    Zhang H H, Zhang C H, Li B S, Han L H, Zhang Y 2010 Nucl. Instrum. Methods. Phys. Res. B 268 2318

    [59]
    [60]

    Sorieul S, Costantini J M, Gosmain L, Thome L, Grob J J 2006 J. Phys. Cons. Matter 18 5235

    [61]
    [62]

    Wang X, Zhang Y W, Liu S Y, Zhao Z Q 2014 Nucl. Instrum. Methods. Phys. Res. B 319 55

    [63]
    [64]
    [65]

    Gao X, Sun G S, Li J M, Zhang Y X, Wang L, Zhao W S, Zeng Y P 2005 Chin. Phys. 14 0599

    [66]

    Sorieul S, Kerbiriou X, Costantini J M, Gosmain L, Calas G, Trautmann C 2012 J. Phys. Cons. Matter 24 125801

    [67]
    [68]
    [69]

    Sorieul S, Costantini J M, Gosmain L, Thome L 2006 J. Phys. Cons. Matter 18 8493

    [70]

    Li B S, Zhang C H, Zhang H H, Shibayama T, Yang Y T 2011 Vacuum 86 452

    [71]
    [72]

    Li M J 2003 Ph. D. Diessertation (Shandong University) (in Chinese) [李美江 2003 博士学位论文 (山东: 山东大学)]

    [73]
    [74]

    Zhang C H, Donnelly S E, Vishnyakov V M, Evans J H, Shibayama T, Sun Y M 2004 Nucl. Instrum. Methods. Phys. Res. B 218 53

    [75]
    [76]

    Weber WJ, Yu N 1997 Nucl. Instrum. Methods. Phys. Res. B 191 127

    [77]
    [78]
    [79]

    Heliou R, Brebner J L, Roorda S 2001 Nucl. Instrum. Methods. Phys. Res. B 175-177 268

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出版历程
  • 收稿日期:  2014-04-24
  • 修回日期:  2014-06-05
  • 刊出日期:  2014-11-05

He离子辐照6H-SiC引入缺陷的光谱研究

  • 1. 中国科学院近代物理研究所, 兰州 730000;
  • 2. 中国科学院大学, 北京 100049
    基金项目: 国家重点基础研究发展计划(973计划)(批准号:2010cB832902)和国家自然科学基金 (批准号:11005130,11105190,11475229,91126011) 资助的课题.

摘要: 实验采用300 keV的He2+辐照6H-SiC,辐照温度分别为室温,450,600和750 ℃,辐照剂量范围为1101511017 cm-2,辐照完成后对样品进行拉曼散射和紫外可见透射光谱测试与研究. 这两种分析方法的实验结果表明,He离子辐照产生的缺陷以及缺陷的恢复与辐照剂量和辐照温度有着直接关系. 室温下辐照会使晶体出现非晶化,体现在拉曼特征峰消失,相对拉曼强度达到饱和(同时出现了较强的Si-Si峰);高温下辐照伴随着晶体缺陷的恢复过程,当氦泡未存在时,高温辐照很容易导致Frenkel对、缺陷团簇等缺陷恢复,当氦泡存在时,氦泡会抑制缺陷恢复,体现在相对拉曼强度和相对吸收系数曲线斜率的变化趋势上. 本文重点讨论了高温辐照情况下氦泡对缺陷聚集与恢复的影响,并与高温下硅离子辐照碳化硅结果进行了对比.

English Abstract

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