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ZnO thin films are prepared by sol-gel method on Si substrates. The structural and optical properties of the films annealed at different temperatures are analyzed by X-ray diffraction (XRD), scanning electron microscopy, X-ray photoelectron spectroscopy and photoluminescence. The results of XRD show that each of all the ZnO thin films has a wurtzite phase and is preferentially oriented along the c-axis direction. The sample annealed at 900℃ exhibits a better crystalline quality. Bright and stable structured green luminescence is achieved from the Cu-doped ZnO thin film. The intensity of the green emission increases significantly after annealing at 800℃, while starts to decrease with further increasing temperature. Green luminescence is correlated with the creation of Zn vacancies. Green emission peaks are found to be dependent on the relative concentration of defect centers. The substitution of Cu2+ by Cu+ will increase concentration of defects in the Cu:ZnO thin film and result in very strong green emission.
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Keywords:
- Cu：ZnO /
- sol-gel /
- green emission
[1] Liu S H, Hsu H S, Venkataiah G, Qi X, Lin C R, Lee J F, Liang K S, Huang J C A 2010 Appl. Phys. Lett. 96 262504
[2] Liu X C, Ji Y J, Zhao J Q, Liu L Q, Sun Z P, Dong H L 2010 Acta Phys. Sin. 59 4925 (in Chinese) [刘小村, 季燕菊, 赵俊卿, 刘立强, 孙兆鹏, 董和磊 2010 物理学报 59 4925]
[3] Lin C A, Tsai D S, Chen C Y, He J H 2011 Nanoscale 3 1195
[4] Dev A, Niepelt R, Richters J P, Ronning C, Voss T 2010 Nanotechnology 21 065709
[5] Huang X H, Tay C B, Zhan Z Y, Zhang C, Zheng L X, Venkatesan T, Chua S J 2011 Cryst. Eng. Commun. 13 7032
[6] Tay Y Y, Tan T T, Boey F, Liang M H, Ye J, Zhao Y, Norby T, Li S 2010 Phys. Chem. Chem. Phys. 12 2373
[7] Xu L H, Zheng G G, Lai M, Pei S X 2014 J. Alloys Compd. 583 560
[8] Das S N, Moon K J, Kar J P, Choi J H, Xiong J J, Lee T I, Myoung J M 2010 Appl. Phys. Lett. 97 022103
[9] Sun H, Zhang Q F, Wu J L 2007 Acta Phys. Sin. 56 3479 (in Chinese) [孙晖, 张琦锋, 吴锦雷 2007 物理学报 56 3479]
[10] Wang D D, Xing G Z, Gao M, Yang L L, Yang J H, Wu T 2011 J. Phys. Chem. C 115 22729
[11] Liu Y D, Liang H W, Xu L, Zhao J Z, Bian J M, Luo Y, Liu Y, Li W C, Wu G G, Du G T 2010 J. Appl. Phys. 108 113507
[12] Li F M, Bo L T, Ma S Y, Huang X L, Ma L G, LiuJ, Zhang X L, Yang F C, Zhao Q 2012 Superlattices Microstruct. 51 332
[13] Serhane R, Messaci S A, Lafane S, Khales H, Aouimeur W, Bey A H, Boutkedjirt T 2014 Appl. Sur. Sci. 288 572
[14] Liu A, Liu G X, Shan F K, Zhu H H, Shin B C, Lee W J, Cho C R 2013 Chin. Phys. Lett. 30 127301
[15] Jiang J, Zhu L P, Wu Y Z, Zeng Y J, He H P, Lin J M, Ye Z Z 2012 Mater. Lett. 68 258
[16] Lina M C, Wua M K, Chen M J, Yanga J R, Shiojirid M 2012 Mater. Chem. Phys. 135 88
[17] Cui X Z, Zhang T C, Mei Z X, Liu Z L, Liu Y P, Guo Y, Xue Q K, Du X L 2008 J. Crys. Growth 310 5428
[18] Cao M M, Zhao X R, Duan L B, Liu J R, Guan M M, Guo W R 2014 Chin. Phys. B 23 047805
[19] Li F M, Zhu C T, Man S Y, Sun A M, Song H S, Li X B, Wang X 2013 Mater. Sci. Semicon. Process. 16 1079
[20] Ma L G, Ma S Y, Chen H X, Ai X Q, Huang X L 2011 Appl. Sur. Sci. 257 10036
[21] Peng X, Xu J, Zang H, Wang B, Wang Z 2008 J. Lumin. 128 297
[22] Kulyk B, Sahraoui B, Figà V, Turko B, Rudyk V, Kapustianyk V 2009 J. Alloys. Compd. 481 819
[23] Zhu M W, Xia J H, Hong R J, Abu-Samra H, Huang H, Staedler T, Gong J, Sun C, Jiang X 2008 J. Cryst. Growth 310 816
[24] Kishida S, Tokutaka H, Nakanishi S, Watanabe Y, Fujimoto H, Nishimori K, Ishihara N, Futo W, Torigoe S, Harada H 1989 Jpn. J. Appl. Phys. 28 951
[25] Huang X H, Zhang C, Tay C B, Venkatesan T, Chua S J 2013 Appl. Phys. Lett. 102 111106
[26] Janotti A, van de Walle C G 2009 Rep. Prog. Phys. 72 126501
[27] Shen Q H, Gao Z W, Ding H Y, Zhang G H, Pan N, Wang X P 2012 Acta Phys. Sin. 61 167105 (in Chinese) [沈庆鹤, 高志伟, 丁怀义, 张光辉, 潘楠, 王晓平 2012 物理学报 61 167105]
[28] Xu J P, Liu P, Shi S B, Zhang X S, Wang L S, Ren Z R, Ge L, Li L 2012 Appl. Surf. Sci. 258 7118
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[1] Liu S H, Hsu H S, Venkataiah G, Qi X, Lin C R, Lee J F, Liang K S, Huang J C A 2010 Appl. Phys. Lett. 96 262504
[2] Liu X C, Ji Y J, Zhao J Q, Liu L Q, Sun Z P, Dong H L 2010 Acta Phys. Sin. 59 4925 (in Chinese) [刘小村, 季燕菊, 赵俊卿, 刘立强, 孙兆鹏, 董和磊 2010 物理学报 59 4925]
[3] Lin C A, Tsai D S, Chen C Y, He J H 2011 Nanoscale 3 1195
[4] Dev A, Niepelt R, Richters J P, Ronning C, Voss T 2010 Nanotechnology 21 065709
[5] Huang X H, Tay C B, Zhan Z Y, Zhang C, Zheng L X, Venkatesan T, Chua S J 2011 Cryst. Eng. Commun. 13 7032
[6] Tay Y Y, Tan T T, Boey F, Liang M H, Ye J, Zhao Y, Norby T, Li S 2010 Phys. Chem. Chem. Phys. 12 2373
[7] Xu L H, Zheng G G, Lai M, Pei S X 2014 J. Alloys Compd. 583 560
[8] Das S N, Moon K J, Kar J P, Choi J H, Xiong J J, Lee T I, Myoung J M 2010 Appl. Phys. Lett. 97 022103
[9] Sun H, Zhang Q F, Wu J L 2007 Acta Phys. Sin. 56 3479 (in Chinese) [孙晖, 张琦锋, 吴锦雷 2007 物理学报 56 3479]
[10] Wang D D, Xing G Z, Gao M, Yang L L, Yang J H, Wu T 2011 J. Phys. Chem. C 115 22729
[11] Liu Y D, Liang H W, Xu L, Zhao J Z, Bian J M, Luo Y, Liu Y, Li W C, Wu G G, Du G T 2010 J. Appl. Phys. 108 113507
[12] Li F M, Bo L T, Ma S Y, Huang X L, Ma L G, LiuJ, Zhang X L, Yang F C, Zhao Q 2012 Superlattices Microstruct. 51 332
[13] Serhane R, Messaci S A, Lafane S, Khales H, Aouimeur W, Bey A H, Boutkedjirt T 2014 Appl. Sur. Sci. 288 572
[14] Liu A, Liu G X, Shan F K, Zhu H H, Shin B C, Lee W J, Cho C R 2013 Chin. Phys. Lett. 30 127301
[15] Jiang J, Zhu L P, Wu Y Z, Zeng Y J, He H P, Lin J M, Ye Z Z 2012 Mater. Lett. 68 258
[16] Lina M C, Wua M K, Chen M J, Yanga J R, Shiojirid M 2012 Mater. Chem. Phys. 135 88
[17] Cui X Z, Zhang T C, Mei Z X, Liu Z L, Liu Y P, Guo Y, Xue Q K, Du X L 2008 J. Crys. Growth 310 5428
[18] Cao M M, Zhao X R, Duan L B, Liu J R, Guan M M, Guo W R 2014 Chin. Phys. B 23 047805
[19] Li F M, Zhu C T, Man S Y, Sun A M, Song H S, Li X B, Wang X 2013 Mater. Sci. Semicon. Process. 16 1079
[20] Ma L G, Ma S Y, Chen H X, Ai X Q, Huang X L 2011 Appl. Sur. Sci. 257 10036
[21] Peng X, Xu J, Zang H, Wang B, Wang Z 2008 J. Lumin. 128 297
[22] Kulyk B, Sahraoui B, Figà V, Turko B, Rudyk V, Kapustianyk V 2009 J. Alloys. Compd. 481 819
[23] Zhu M W, Xia J H, Hong R J, Abu-Samra H, Huang H, Staedler T, Gong J, Sun C, Jiang X 2008 J. Cryst. Growth 310 816
[24] Kishida S, Tokutaka H, Nakanishi S, Watanabe Y, Fujimoto H, Nishimori K, Ishihara N, Futo W, Torigoe S, Harada H 1989 Jpn. J. Appl. Phys. 28 951
[25] Huang X H, Zhang C, Tay C B, Venkatesan T, Chua S J 2013 Appl. Phys. Lett. 102 111106
[26] Janotti A, van de Walle C G 2009 Rep. Prog. Phys. 72 126501
[27] Shen Q H, Gao Z W, Ding H Y, Zhang G H, Pan N, Wang X P 2012 Acta Phys. Sin. 61 167105 (in Chinese) [沈庆鹤, 高志伟, 丁怀义, 张光辉, 潘楠, 王晓平 2012 物理学报 61 167105]
[28] Xu J P, Liu P, Shi S B, Zhang X S, Wang L S, Ren Z R, Ge L, Li L 2012 Appl. Surf. Sci. 258 7118
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