Cs-Te photocathode preparation with Te intermittent and Cs continuous deposition based on improved preparation success rate and quantum efficiency

Li Xu-Dong; Jiang Zeng-Gong; Gu Qiang; Zhang Meng; Lin Guo-Qiang; Zhao Ming-Hua; Guo Li

doi:10.7498/aps.71.20220818

Abstract

In order to prepare high-quantum-efficiency semiconductor Cs-Te photocathode which can produce a high-quality electron source, based on the INFN-LASA Cs-Te photocathode preparation method, the Cs-Te photocathode preparation method with Te intermittent, Cs continuous deposition is developed. The Cs-Te photocathode with quantum efficiency greater than 5% under 265 nm UV irradiation is successfully prepared in the photocathode preparation device of SINAP and SARI, and the fabrication success rate reaches 100%. As long as the preparation chamber vacuum degree is better than 10^–8 Pa, the Cs-Te photocathode with high quantum efficiency can be prepared by this preparation method, which will not be different due to the changes of preparation equipment and operators.

Keywords:

Authors and contacts

1.
Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China
2.
Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201808, China

Corresponding author: Li Xu-Dong, lixudong@sari.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11905276, 12075302), the Natural Science Foundation of Shanghai, China (Grant No. 22ZR1470300), and the Shanghai Municipal Science and Technology Major Project, China (Grant No. 2017SHZDZX02).

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References

[1]	Michelato P 1997 Nucl. Instrum. Meth. A 393 455 Google Scholar
[2]	Musumeci P, Navarro J G, Rosenzweig J B, Cultrera L, Bazarov I, Maxson J, Karkare S, Padmore H 2018 Nucl. Instrum. Meth. A 907 209 Google Scholar
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Cited By

图 1 SINAP光阴极制备装置

Figure 1. SINAP photocathode preparation device.

DownLoad: Full-Size Img PowerPoint

图 2 SARI光阴极制备装置

Figure 2. SARI photocathode preparation device.

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图 3 Ta蒸发舟

Figure 3. Ta evaporation boat.

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图 4 Te, Cs顺序沉积制备Cs-Te光阴极的步骤及Mo基底上的Cs-Te光阴极

Figure 4. The Cs-Te photocathode preparation steps with Te, Cs sequential deposition and the Cs-Te photocathode on Mo substrate.

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图 5 Te和Cs源的沉积厚度、反射率、量子效率和真空度随时间的变化

Figure 5. The variation of deposition thickness, reflectivity, quantum efficiency and vacuum degree of Te and Cs evaporation sources with time.

DownLoad: Full-Size Img PowerPoint

图 6 Cs-Te光阴极的热退火研究

Figure 6. Thermal annealing study of Cs-Te photocathode.

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图 7 基底和非基底上的Cs-Te光阴极, 几次制备过程中电流(光电流+暗电流)变化

Figure 7. The Cs-Te photocathode on substrate and non-substrate, the current (photocurrent + dark current) variation during several preparation processes.

DownLoad: Full-Size Img PowerPoint

图 8 开缝的SS304管

Figure 8. The SS304 pipe with slit.

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图 9 Te断续、Cs持续沉积制备Cs-Te光阴极过程

Figure 9. The Cs-Te photocathode preparation process with Te intermittent, Cs continuous deposition.

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图 10 Te和Cs源的沉积厚度、反射率、量子效率和真空度随时间的变化

Figure 10. The variation of deposition thickness, reflectivity, quantum efficiency and vacuum degree of Te and Cs evaporation sources with time.

DownLoad: Full-Size Img PowerPoint

图 11 Te, Cs顺序沉积与Te断续、Cs持续沉积制备Cs-Te光阴极对比

Figure 11. The comparison of Cs-Te photocathode preparation between with Te, Cs sequential deposition and Te intermittent, Cs continuous deposition.

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图 12 热退火Cs-Te光阴极时, 量子效率与温度的关系

Figure 12. The relationship between quantum efficiency and temperature during thermal annealing of Cs-Te photocathode.

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图 13 制备过程中光电流收集电路及制备好的Cs-Te光阴极

Figure 13. Photocurrent collection circuit during the photocathode preparation process and Cs-Te photocathode.

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图 14 Cs-Te光阴极制备过程中, 量子效率变化

Figure 14. The quantum efficiency changes during the Cs-Te photocathode preparation process.

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图 15 光阴极制备过程中, 光电流收集电路及制备好的Cs-Te光阴极

Figure 15. Photocurrent collection circuit during the photocathode preparation process and Cs-Te photocathode.

DownLoad: Full-Size Img PowerPoint

图 16 基底在室温和100 ℃时, 光阴极制备过程中Cs-Te光阴极量子效率变化

Figure 16. The change of the quantum efficiency of Cs-Te photocathode during the preparation process at substrate room temperature and 100 ℃.

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[1]	Michelato P 1997 Nucl. Instrum. Meth. A 393 455 Google Scholar
[2]	Musumeci P, Navarro J G, Rosenzweig J B, Cultrera L, Bazarov I, Maxson J, Karkare S, Padmore H 2018 Nucl. Instrum. Meth. A 907 209 Google Scholar
[3]	向蓉, 全胜文, 林林, 丁原涛, 鲁向阳, 焦飞, 王桂梅, 赵夔 2004 高能物理与核物理 28 771 Google Scholar Xiang R, Quan S W, Lin L, Ding Y T, Lu X Y, Jiao F, Wang G M, Zhao K 2004 High Energy Phys. Nuc. 28 771 Google Scholar
[4]	Xiang R, Arnold A, Buettig H, Janssen D, Justus M, Lehnert U, Michel P, Murcek P, Schamlott A, Schneider Ch, Schurig R, Staufenbiel F, Teichert J 2010 Phys. Rev. Spec. Top-Ac. 13 043501 Google Scholar
[5]	Bossert J, Ganter R, Schaer M, et al. 2014 Proceedings of the 36th International Free Electron Laser Conference Basel, Switzerland, August 25–29, 2014 THP046
[6]	Aryshev A, Shevelev M, Honda Y, Terunuma N, Urakawa J. 2017 Appl. Phys. Lett. 111 033508 Google Scholar
[7]	Panuganti H, Piot P 2017 Appl. Phys. Lett. 110 093505 Google Scholar
[8]	Pierce C M, Bae J K, Galdi A, Cultrera L, Bazarov I, Maxson J 2021 Appl. Phys. Lett. 118 124101 Google Scholar
[9]	Kong S H, Kinross-Wright J, Nguyen D C, Sheffield R L, Weber M E 1995 Nucl. Instrum. Meth. A 358 284 Google Scholar
[10]	Schreiber S, Lederer S, Michelato P, et al. 2018 Proceedings of the 38 th International Free-Electron Laser Conference New Mexico, USA, August 20–25 2018 WEP003
[11]	Huang P, Qian H, Chen Y, et al. 2019 Proceedings of the 39th International Free Electron Laser Conference Hamburg, Germany, August 26–30 2019 WEP062
[12]	Loisch G, Chen Y, Koschitzki C, et al. 2022 Appl. Phys. Lett. 120 104102 Google Scholar
[13]	Filippetto D, Qian H, Sannibale F 2015 Appl. Phys. Lett. 107 042104 Google Scholar
[14]	Wisniewski E E, Velazquez D, Yusof Z, Spentzouris L, Terry J, Sarkar T J, Harkay K 2013 Nucl. Instrum. Meth. A 711 60 Google Scholar
[15]	Wisniewski E, Antipov S, Conde M, et al. 2015 Proceedings of the 6th International Particle Accelerator Conference VA, USA, May 3–8 2015 WEPTY013
[16]	Terunuma N, Murata A, Fukuda M, et al. 2010 Nucl. Instrum. Meth. A 613 1 Google Scholar
[17]	Tamba T, Miyamatsu J, Sakaue K, et al. 2019 Proceedings of the 10th International Particle Accelerator Conference Melbourne, Australia, May 19–24 2019 TUPTS111
[18]	Kong S H, Kinross-Wright J, Nguyen D C, Sheffield R L 1995 J. Appl. Phys. 77 6031 Google Scholar
[19]	Michelato P, Di Bona A, Pagani C, et al. 1996 Proceedings of the 5th European Particle Accelerator Conference Barcelona, Spain, June 10–14 1996 p1475
[20]	Dai J, Quan S W, Chang C, Liu K X, Zhao K 2012 Chin. Phys. C 36 475 Google Scholar
[21]	Monaco L, Michelato P, Sertore D, et al. 2019 Proceedings of the 39th International Free Electron Laser Conference Hamburg, Germany, August 26–30 2019 WEA04
[22]	Chevallay E, Divall Csatari M, Doebert S, et al. 2012 Proceedings of the 3rd International Particle Accelerator Conference LA, USA, May 20–25 2012 TUPPD066
[23]	Gaowei M, Sinsheimer J, Strom D, et al. 2019 Phys. Rev. Accel. Beams. 22 073401 Google Scholar
[24]	牛军, 张益军, 常本康, 等 2011 物理学报 60 044209 Google Scholar Niu J, Zhang Y J, Chang B K, et al. 2011 Acta Phys. Sin. 60 044209 Google Scholar
[25]	郝广辉, 韩攀阳, 李兴辉, 等 2020 物理学报 69 108501 Google Scholar Hao G H, Han P Y, Li X H, et al. 2020 Acta Phys. Sin. 69 108501 Google Scholar
[26]	王国建, 刘燕文, 李芬, 等 2021 物理学报 70 218503 Google Scholar Wang J G, Liu Y W, Li F, et al. 2021 Acta Phys. Sin. 70 218503 Google Scholar
[27]	Michelato P, Pagani C, Sertore D, di Bona A, Valeri S 1997 Nucl. Instrum. Meth. A 393 464 Google Scholar
[28]	Sertore D, Michelato P, Monaco L, et al. 2014 J. Vac. Sci. Technol. A 32 031602 Google Scholar

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