-
讨论了一种具有超快时间响应特性的新光电阴极, 即大梯度指数掺杂透射式GaAs 负电子亲和势 (NEA) 光电阴极, 模拟了它的量子效率、时间分辨和空间分辨能力等特性. 理论分析结果表明, 由于大梯度指数掺杂设计方式, 在吸收层内形成较大的内建电场, 因此光生电子在GaAsNEA阴极内的渡越时间大大缩短, 当GaAs吸收层厚度～0.9 m时, 其响应时间达到～ 10 ps, 说明这种新NEA阴极具有远优于传统均匀掺杂NEA阴极的超快响应特性. 同时在整个光谱响应范围内, 量子效率达到约10%-20%, 空间分辨力显著高于以往的计算结果. 分析结果表明,在保证较高的量子效率条件下, 这种新阴极能够突破常规GaAsNEA阴极的时间分辨率极限, 提高GaAsNEA阴极本身的分辨力, 有望用于超快摄影、电子加速器和自由电子激光器的电子源等领域, 进一步扩展NEA光电阴极的应用范围.A new-type GaAs photocathode with ultrafast time response, that is, the large exponential-doping transmission-mode GaAs photocathode, is discussed in detail. The response characteristics, including quantum yield, time and spatial resolution, are numerically simulated. The analysis results show that the transit response time of the photo-excited electrons for the GaAs photocathode is extremely shortened, because the built-in electric field in GaAs layer formed by the large exponential-doping mode is benefitcial to the photoelectron transport process of GaAs photocathodes. The response time can reach about 10 ps when the thickness of GaAs dgorption layer is around, which shows that the novel NEA cathode has a better feature of temporal response than that of traditional GaAs photocathode. In addition, the quantum yield will reach ～10%-20% in the whole special response range, and the spatial resolution is improved obviously. The analysis results indicate that with high quantum efficiency guaranteed, the large exponential-doping NEA cathode overcomes the limitation of time response of traditional GaAs NEA cathode and improves the spatial resolution, which indicates that the new NEA cathode is expected to meet the demands of high-speed device and photoelectron device, and promote the further development and applications of NEA cathodes.
-
Keywords:
- large exponential-doping /
- built-in electric field /
- quantum yield /
- time and spatial resolution
[1] Zuic I, Fabian J, Samma S D 2004 Rev. Mod. Phys. 76 323
[2] Guo L J, Wiistenberg J P, Oleksiy A, Bauer M, Aeschlimann M 2005 Acta Phys．Sin 54 3200 (in Chinese) [郭立俊, J. P. Wtlstenberg, A. Oleksiy, M. Bauer, M. Aeschlimann 2005 物理学报 54 3200]
[3] Zhou L W, Li Y, Zhang Z Q, Monastyrskl M A, Schelev M Y 2005 Acta Phys. Sin. 54 3591 (in Chinese) [周立伟, 李元, 张智诠, M. A. Monastyrski, M. Y. Schelev 2005 物理学报 54 3591]
[4] Phillips C C, Hughes A E, Sibbert W 1984 J. Phys. D: Appl. Phys. 17 1713
[5] Jones L B, Rozhkov S A, Bakin V V, Kosolobov S N, Militsyn B L, Scheibler H E, Smith S L, Tereldiov A S 2009 18th International Spin Physics Symposium Spin. Phys. 1149 1057
[6] Aulenbacher K, Schuler J, Harrach D V, Reichert E, Röthgen J, Subashev A, Tioukine V, Yashin Y 2002 J. Appl. Phys. 92 7536
[7] Guo L H, Li J M, Hou X 1990 Solid State Electronics 33 435
[8] Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) [邹继军, 常本康, 杨智 2007 物理学报 56 2992]
[9] Escher J S, Schade H 1973 J. Appl. Phys. 44 5309
[10] Fisher D G, Enstrom R E 1972 J. Appl. Phys. 43 3815
[11] Freeman K R, Hobson G S 1972 IEEE Trans. ED-19 62
[12] Vergara G, Herrera-Gómez A, Spicer W E 1997 J. Appl. Phys. 83(9) 1809
[13] Zou J J, Chang B K, Yang Z, Zhang Y J, Qiao J L 2007 Acta Phys. Sin. 58 5842 ( in Chinese) [邹继军, 常本康, 杨智, 张益军, 乔建良 2009 物理学报 58 5842]
-
[1] Zuic I, Fabian J, Samma S D 2004 Rev. Mod. Phys. 76 323
[2] Guo L J, Wiistenberg J P, Oleksiy A, Bauer M, Aeschlimann M 2005 Acta Phys．Sin 54 3200 (in Chinese) [郭立俊, J. P. Wtlstenberg, A. Oleksiy, M. Bauer, M. Aeschlimann 2005 物理学报 54 3200]
[3] Zhou L W, Li Y, Zhang Z Q, Monastyrskl M A, Schelev M Y 2005 Acta Phys. Sin. 54 3591 (in Chinese) [周立伟, 李元, 张智诠, M. A. Monastyrski, M. Y. Schelev 2005 物理学报 54 3591]
[4] Phillips C C, Hughes A E, Sibbert W 1984 J. Phys. D: Appl. Phys. 17 1713
[5] Jones L B, Rozhkov S A, Bakin V V, Kosolobov S N, Militsyn B L, Scheibler H E, Smith S L, Tereldiov A S 2009 18th International Spin Physics Symposium Spin. Phys. 1149 1057
[6] Aulenbacher K, Schuler J, Harrach D V, Reichert E, Röthgen J, Subashev A, Tioukine V, Yashin Y 2002 J. Appl. Phys. 92 7536
[7] Guo L H, Li J M, Hou X 1990 Solid State Electronics 33 435
[8] Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) [邹继军, 常本康, 杨智 2007 物理学报 56 2992]
[9] Escher J S, Schade H 1973 J. Appl. Phys. 44 5309
[10] Fisher D G, Enstrom R E 1972 J. Appl. Phys. 43 3815
[11] Freeman K R, Hobson G S 1972 IEEE Trans. ED-19 62
[12] Vergara G, Herrera-Gómez A, Spicer W E 1997 J. Appl. Phys. 83(9) 1809
[13] Zou J J, Chang B K, Yang Z, Zhang Y J, Qiao J L 2007 Acta Phys. Sin. 58 5842 ( in Chinese) [邹继军, 常本康, 杨智, 张益军, 乔建良 2009 物理学报 58 5842]
-
[1] 李亚莎, 刘世冲, 刘清东, 夏宇, 胡豁然, 李光竹. 外电场下含有缔合缺陷的ZnO/ ${\boldsymbol{\beta }}$ -Bi2O3界面电学性能. 物理学报, 2022, 71(2): 026801. doi: 10.7498/aps.71.20210635[2] 李旭东, 姜增公, 顾强, 张猛, 林国强, 赵明华, 郭力. 基于制备成功率和量子效率提升的Te断续、Cs持续沉积制备Cs-Te光阴极. 物理学报, 2022, 71(17): 178501. doi: 10.7498/aps.71.20220818 [3] 邓文娟, 朱斌, 王壮飞, 彭新村, 邹继军. 变掺杂变组分AlxGa1–xAs/GaAs反射式光电阴极分辨力特性. 物理学报, 2022, 71(15): 157901. doi: 10.7498/aps.71.20220244 [4] 李亚莎, 刘世冲, 刘清东, 夏宇, 胡豁然, 李光竹. 外电场下含有缔合缺陷的ZnO/β-Bi2O3界面电学性能研究. 物理学报, 2021, (): . doi: 10.7498/aps.70.20210635 [5] 乔建良, 徐源, 高有堂, 牛军, 常本康. 反射式变掺杂负电子亲和势GaN光电阴极量子效率研究. 物理学报, 2017, 66(6): 067903. doi: 10.7498/aps.66.067903 [6] 曹汝楠, 徐飞, 朱佳斌, 葛升, 王文贞, 徐海涛, 徐闰, 吴杨琳, 马忠权, 洪峰, 蒋最敏. 平面型钙钛矿太阳能电池温度相关的光伏性能时间响应特性. 物理学报, 2016, 65(18): 188801. doi: 10.7498/aps.65.188801 [7] 赵聪, 孟庆裕, 孙文军. Eu3+掺杂CaMoO4微米荧光粉发光性质的研究. 物理学报, 2015, 64(10): 107803. doi: 10.7498/aps.64.107803 [8] 丁美斌, 娄朝刚, 王琦龙, 孙强. GaAs量子阱太阳能电池量子效率的研究. 物理学报, 2014, 63(19): 198502. doi: 10.7498/aps.63.198502 [9] 叶松, 王向贤, 侯宜栋, 张志友, 杜惊雷. 自组装银膜增强8-羟基喹啉铝(Alq3)光致发光的实验和理论研究. 物理学报, 2014, 63(8): 087802. doi: 10.7498/aps.63.087802 [10] 邓文娟, 彭新村, 邹继军, 江少涛, 郭栋, 张益军, 常本康. 变组分AlGaAs/GaAs透射式光电阴极分辨力特性分析. 物理学报, 2014, 63(16): 167902. doi: 10.7498/aps.63.167902 [11] 赵凤岐, 张敏, 李志强, 姬延明. 纤锌矿In0.19Ga0.81N/GaN量子阱中光学声子和内建电场对束缚极化子结合能的影响. 物理学报, 2014, 63(17): 177101. doi: 10.7498/aps.63.177101 [12] 陈鑫龙, 赵静, 常本康, 徐源, 张益军, 金睦淳, 郝广辉. 指数掺杂反射式GaAlAs和GaAs光电阴极比较研究. 物理学报, 2013, 62(3): 037303. doi: 10.7498/aps.62.037303 [13] 黄诗浩, 李成, 陈城钊, 郑元宇, 赖虹凯, 陈松岩. N型掺杂应变Ge发光性质. 物理学报, 2012, 61(3): 036202. doi: 10.7498/aps.61.036202 [14] 王晓晖, 常本康, 钱芸生, 高频, 张益军, 郭向阳, 杜晓晴. 梯度掺杂与均匀掺杂GaN光电阴极的对比研究. 物理学报, 2011, 60(4): 047901. doi: 10.7498/aps.60.047901 [15] 张益军, 牛军, 赵静, 邹继军, 常本康. 指数掺杂结构对透射式GaAs光电阴极量子效率的影响研究. 物理学报, 2011, 60(6): 067301. doi: 10.7498/aps.60.067301 [16] 牛军, 杨智, 常本康, 乔建良, 张益军. 反射式变掺杂GaAs光电阴极量子效率模型研究. 物理学报, 2009, 58(7): 5002-5006. doi: 10.7498/aps.58.5002 [17] 邹继军, 常本康, 杨智, 张益军, 乔建良. 指数掺杂GaAs光电阴极分辨力特性分析. 物理学报, 2009, 58(8): 5842-5846. doi: 10.7498/aps.58.5842 [18] 申 晔, 邢怀中, 俞建国, 吕 斌, 茅惠兵, 王基庆. 极化诱导的内建电场对Mn δ掺杂的GaN/AlGaN量子阱居里温度的调制. 物理学报, 2007, 56(6): 3453-3457. doi: 10.7498/aps.56.3453 [19] 邹继军, 常本康, 杨 智. 指数掺杂GaAs光电阴极量子效率的理论计算. 物理学报, 2007, 56(5): 2992-2997. doi: 10.7498/aps.56.2992 [20] 邵嘉平, 胡 卉, 郭文平, 汪 莱, 罗 毅, 孙长征, 郝智彪. 高In组分InxGa1－xN/GaN多量子阱材料电致荧光谱的研究. 物理学报, 2005, 54(8): 3905-3909. doi: 10.7498/aps.54.3905
计量
- 文章访问数: 4198
- PDF下载量: 320
- 被引次数: 0
下载:
