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Jin Cheng-Cheng, Ding Ling-Ling, Song Zi-Xin, Tao Hai-Jun. Improvement of performance of perovskite solar cells through BaTiO3 doping regulated built-in electric field. Acta Physica Sinica,
2024, 73(3): 038801.
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Deng Wen-Juan, Zhu Bin, Wang Zhuang-Fei, Peng Xin-Cun, Zou Ji-Jun. Resolution characteristics of varying doping and varying composition AlxGa1–xAs/GaAs reflective photocathodes. Acta Physica Sinica,
2022, 71(15): 157901.
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Liu Na, Hu Bian, Wei Hong-Peng, Liu Hong. Electrically controlled quantum spin Hall in narrow zigzag graphene nanoribbon. Acta Physica Sinica,
2018, 67(11): 117301.
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Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang. Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica,
2017, 66(6): 067903.
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Li Li-Ming, Ning Feng, Tang Li-Ming. First-principles study of effects of quantum confinement and strain on the electronic properties of GaSb nanowires. Acta Physica Sinica,
2015, 64(22): 227303.
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Zhao Feng-Qi, Zhang Min, Li Zhi-Qiang, Ji Yan-Ming. Effects of optical phonon and built-in electric field on the binding energy of bound polarons in a wurtzite In0.19Ga0.81N/GaN quantum well. Acta Physica Sinica,
2014, 63(17): 177101.
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Chen Xin-Long, Zhao Jing, Chang Ben-Kang, Xu Yuan, Zhang Yi-Jun, Jin Mu-Chun, Hao Guang-Hui. Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodes. Acta Physica Sinica,
2013, 62(3): 037303.
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Liu Zhu, Zhao Zhi-Fei, Guo Hao-Min, Wang Yu-Qi. Band structure and optical absorption in InAs/GaSb quantum well. Acta Physica Sinica,
2012, 61(21): 217303.
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2012, 61(18): 187901.
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Ma Xiao-Feng, Wang Yi-Zhe, Zhou Cheng-Yue. Structural and optical properties of a-Si ∶H/SiO2 multiple quantum wells. Acta Physica Sinica,
2011, 60(6): 068102.
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Yu Feng, Wang Pei-Ji, Zhang Chang-Wen. Electronic structure and optical properties of Al-doped SnO2. Acta Physica Sinica,
2011, 60(2): 023101.
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Wan Wen-Jian, Yao Ruo-He, Geng Kui-Wei. Electronic structure of CuAlS2 doped with Mg and Zn. Acta Physica Sinica,
2011, 60(6): 067103.
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Lin Qi, Chen Yu-Hang, Wu Jian-Bao, Kong Zong-Min. Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons. Acta Physica Sinica,
2011, 60(9): 097103.
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Zhao Jing, Zhang Yi-Jun, Chang Ben-Kang, Xiong Ya-Juan, Zhang Jun-Ju, Shi Feng, Cheng Hong-Chang, Cui Dong-Xu. Research on quantum efficient fitting and structure of high performance transmission-mode GaAs photocathode. Acta Physica Sinica,
2011, 60(10): 107802.
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Du Xiao-Qing, Wang Xiao-Hui, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Zhang Yi-Jun, Guo Xiang-Yang. Comparison between gradient-doping and uniform-doping GaN photocathodes. Acta Physica Sinica,
2011, 60(4): 047901.
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Zhang Yi-Jun, Niu Jun, Zhao Jing, Zou Ji-Jun, Chang Ben-Kang. Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes. Acta Physica Sinica,
2011, 60(6): 067301.
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Yang Zhi, Zou Ji-Jun, Chang Ben-Kang. Research on the optimal thickness of transmission-mode exponential-doping GaAs photocathode. Acta Physica Sinica,
2010, 59(6): 4290-4295.
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Niu Jun, Yang Zhi, Chang Ben-Kang, Qiao Jian-Liang, Zhang Yi-Jun. Study on the model of quantum efficiency of reflective varied doping GaAs photocathode. Acta Physica Sinica,
2009, 58(7): 5002-5006.
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Zou Ji-Jun, Chang Ben-Kang, Yang Zhi, Zhang Yi-Jun, Qiao Jian-Liang. Resolution characteristic of exponential-doping GaAs photocathodes. Acta Physica Sinica,
2009, 58(8): 5842-5846.
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Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing. Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica,
2007, 56(6): 3453-3457.
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