Research on the optimal thickness of transmission-mode exponential-doping GaAs photocathode

Yang Zhi; Zou Ji-Jun; Chang Ben-Kang

doi:10.7498/aps.59.4290

Abstract

The difference between the diffusion drift length of photoelectrons in exponential-doping GaAs photocathode and that in uniform-doping GaAs photocathode is studied. According to quantum equations, the optimized thickness of transmission-mode exponential-doping GaAs photocathode is simulated to be 20 μm. Two transmission-mode exponential-doping GaAs samples with the thickness of 16 and 20 μm are activated by (Cs,O) alternation technique. Integral sensitivities of the two samples are 1228 and 1547 μA/lm, respectively. The ratio of integral sensitivities of the two samples is 0796∶1, which agrees with the simulation result.

Keywords:

Authors and contacts

1.
南京理工大学电子工程与光电技术学院，南京 210094

References

[1]	［1］Reilly D J, Taylor M J, Petta R J, Marcus C M, Hanson M P, Gossard A C 2008 Science 321 1350
[2]	［2］Liu Z, Sun Y, Peterson S, Pianetta P 2008 Appl. Phys. Lett. 92 241107
[3]	［3］Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541
[4]	［4］Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 6109 (in Chinese) ［邹继军、常本康、杨智 2007 物理学报 56 610］
[5]	［5］Ding H B, Pang W N , Liu Y B , Shang R C 2005 Acta Phys. Sin. 54 4097 (in Chinese) ［丁海兵、庞文宁、刘义保、尚仁成 2005 物理学报 54 4097］
[6]	［6］Spindt C J, Besser R S, Cao R 1989 Appl. Phys. Lett. 54 1148
[7]	［7］Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) ［邹继军、常本康、杨智 2007 物理学报 56 2992］
[8]	［8］Niu J, Yang Z, Chang B K, Qiao J L, Zhang Y J 2009 Acta Phys. Sin. 58 5002 (in Chinese) ［牛军、杨智、常本康、乔建良、张益军 2009 物理学报 58 5002］
[9]	［9］Schneider J E， Sen P, Pickard D S J 1998 J.Vac. Sci. Techn. 16 3192
[10]	］Guo L J, Wüstenberg J P, Andreyev O, Michael B, Martin A 2005 Acta Phys. Sin. 54 3200 (in Chinese) ［郭立俊、Wüstenberg J P, Andreyev O, Michael B, Martin A 2005 物理学报 54 3200］
[11]	］Machuca F, Liu Z, Sun Y, Pianetta P, Spicer W E, Pease R F W 2003 J. Vac. Sci. Techn. B 21 1863
[12]	］Fisher D G, Enstrom R E, Escher J S 1972 J. Appl. Phys. 43 3815
[13]	］Su C Y, Spicer W E, Lindau I 1983 J. Appl. Phys. 54 1413
[14]	］Spicer W E, Herrera-Gomez A 1993 Proc. SPIE 2022 18
[15]	］James L W, Moll J L 1969 Phys. Rev. 183 740
[16]	］Zou J J, Chang B K, Chen H L, Liu L 2007 J. Appl. Phys. 101 033126
[17]	］Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Beijing: Publishing House of Electronics Industry) p114 (in Chinese) ［刘恩科、朱秉升、罗晋生 2003 半导体物理学(北京:电子工业出版社) 第114页］
[18]	］Turnbull A A, Evans G B 1968 J. Appl. Phys. 1 155

Cited By

[1]	［1］Reilly D J, Taylor M J, Petta R J, Marcus C M, Hanson M P, Gossard A C 2008 Science 321 1350
[2]	［2］Liu Z, Sun Y, Peterson S, Pianetta P 2008 Appl. Phys. Lett. 92 241107
[3]	［3］Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541
[4]	［4］Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 6109 (in Chinese) ［邹继军、常本康、杨智 2007 物理学报 56 610］
[5]	［5］Ding H B, Pang W N , Liu Y B , Shang R C 2005 Acta Phys. Sin. 54 4097 (in Chinese) ［丁海兵、庞文宁、刘义保、尚仁成 2005 物理学报 54 4097］
[6]	［6］Spindt C J, Besser R S, Cao R 1989 Appl. Phys. Lett. 54 1148
[7]	［7］Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) ［邹继军、常本康、杨智 2007 物理学报 56 2992］
[8]	［8］Niu J, Yang Z, Chang B K, Qiao J L, Zhang Y J 2009 Acta Phys. Sin. 58 5002 (in Chinese) ［牛军、杨智、常本康、乔建良、张益军 2009 物理学报 58 5002］
[9]	［9］Schneider J E， Sen P, Pickard D S J 1998 J.Vac. Sci. Techn. 16 3192
[10]	］Guo L J, Wüstenberg J P, Andreyev O, Michael B, Martin A 2005 Acta Phys. Sin. 54 3200 (in Chinese) ［郭立俊、Wüstenberg J P, Andreyev O, Michael B, Martin A 2005 物理学报 54 3200］
[11]	］Machuca F, Liu Z, Sun Y, Pianetta P, Spicer W E, Pease R F W 2003 J. Vac. Sci. Techn. B 21 1863
[12]	］Fisher D G, Enstrom R E, Escher J S 1972 J. Appl. Phys. 43 3815
[13]	］Su C Y, Spicer W E, Lindau I 1983 J. Appl. Phys. 54 1413
[14]	］Spicer W E, Herrera-Gomez A 1993 Proc. SPIE 2022 18
[15]	］James L W, Moll J L 1969 Phys. Rev. 183 740
[16]	］Zou J J, Chang B K, Chen H L, Liu L 2007 J. Appl. Phys. 101 033126
[17]	］Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (Beijing: Publishing House of Electronics Industry) p114 (in Chinese) ［刘恩科、朱秉升、罗晋生 2003 半导体物理学(北京:电子工业出版社) 第114页］
[18]	］Turnbull A A, Evans G B 1968 J. Appl. Phys. 1 155

[1]	Lü Xing, Fu Rong-Guo, Chang Ben-Kang, Guo Xin, Wang Zhi. Improvement and structure optimization of transmission-mode GaAs photocathode performance. Acta Physica Sinica, 2024, 73(3): 037801. doi: 10.7498/aps.73.20231542
[2]	Liu Jing-Yu, Li Wen-Yu, Liu Zhi-Xing, Shu Jing-Yi, Zhao Guo-Zhong. Transmission polarization converter based on V-shaped metasurface in terahertz region. Acta Physica Sinica, 2022, 71(23): 230701. doi: 10.7498/aps.71.20221259
[3]	Wang Jian-Tao, Xiao Wen-Bo, Xia Qing-Gan, Wu Hua-Ming, Li Fan, Huang Le. Influence of back electrode material, structure and thickness on performance of perovskite solar cells. Acta Physica Sinica, 2021, 70(19): 198404. doi: 10.7498/aps.70.20211037
[4]	Mou Huan, Li Bao-Quan, Cao Yang. Transmission-type miniature micro-beam modulated X-ray source based on space application. Acta Physica Sinica, 2016, 65(14): 140703. doi: 10.7498/aps.65.140703
[5]	Yang Xi-Yuan, Zhang Jin-Ping, Wu Yu-Rong, Liu Fu-Sheng. Simulation studies on the influence of nanofilm thickness on the elastic properties of B2-NiAl. Acta Physica Sinica, 2015, 64(1): 016803. doi: 10.7498/aps.64.016803
[6]	Zhang Yun, Xie Zi-Li, Wang-Jian, Tao Tao, Zhang Rong, Liu Bin, Chen Peng, Han Ping, Shi Yi, Zheng You-Dou. Mosaic structure in epitaxial GaN filmvarying with thickness. Acta Physica Sinica, 2013, 62(5): 056101. doi: 10.7498/aps.62.056101
[7]	Lu Fei-Ping, Li Jian-Feng, Sun Shuo. Influence of the functional layer thickness on the light output property of tandem organic light emitting diode：a numerical study. Acta Physica Sinica, 2013, 62(24): 247201. doi: 10.7498/aps.62.247201
[8]	Tian Jing, Yang Xing, Liu Shang-Jun, Lian Xiao-Juan, Chen Jin-Wei, Wang Rui-Lin. Effect of thickness on the properties of Cu(Inx,Ga1-x)Se2 back conduct Mo thin films prepared by DC sputtering. Acta Physica Sinica, 2013, 62(11): 116801. doi: 10.7498/aps.62.116801
[9]	Chen Yi-Ling, Zhang Chen, He Fa, Wang Da, Wang Yue, Feng Qing-Rong. Thickness dependence of critical current density in MgB2 films fabricated by hybrid physical-chemical vapor deposition. Acta Physica Sinica, 2013, 62(19): 197401. doi: 10.7498/aps.62.197401
[10]	Chen Xin-Long, Zhao Jing, Chang Ben-Kang, Xu Yuan, Zhang Yi-Jun, Jin Mu-Chun, Hao Guang-Hui. Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodes. Acta Physica Sinica, 2013, 62(3): 037303. doi: 10.7498/aps.62.037303
[11]	Cai Zhi-Peng, Yang Wen-Zheng, Tang Wei-Dong, Hou Xun. Theoretical analysis of response characteristics for the large exponential-doping transmission-mode GaAs photocathodes. Acta Physica Sinica, 2012, 61(18): 187901. doi: 10.7498/aps.61.187901
[12]	Zhao Jing, Chang Ben-Kang, Zhang Yi-Jun, Zhang Jun-Ju, Shi Feng, Cheng Hong-Chang, Cui Dong-Xu. Comparison between transmission-mode extended blue GaAs photocathodes in optical structure. Acta Physica Sinica, 2012, 61(3): 037803. doi: 10.7498/aps.61.037803
[13]	Niu Jun, Zhang Yi-Jun, Chang Ben-Kang, Xiong Ya-Juan. Adsorption efficiency of cesium in activation process for GaAs photocathode. Acta Physica Sinica, 2011, 60(4): 044209. doi: 10.7498/aps.60.044209
[14]	Yu Huang-Zhong, Wen Yuan-Xin. Influence of the thickness and cathode material on the performance of the polymer solar cell. Acta Physica Sinica, 2011, 60(3): 038401. doi: 10.7498/aps.60.038401
[15]	Du Xiao-Qing, Wang Xiao-Hui, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Zhang Yi-Jun, Qiao Jian-Liang. Study of spectral response for transmission-modeNEA GaN photocathodes. Acta Physica Sinica, 2011, 60(5): 057902. doi: 10.7498/aps.60.057902
[16]	Zhang Yi-Jun, Niu Jun, Zhao Jing, Zou Ji-Jun, Chang Ben-Kang. Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes. Acta Physica Sinica, 2011, 60(6): 067301. doi: 10.7498/aps.60.067301
[17]	Zou Ji-Jun, Chang Ben-Kang, Yang Zhi, Zhang Yi-Jun, Qiao Jian-Liang. Resolution characteristic of exponential-doping GaAs photocathodes. Acta Physica Sinica, 2009, 58(8): 5842-5846. doi: 10.7498/aps.58.5842
[18]	Zou Ji-Jun, Chang Ben-Kang, Yang Zhi, Gao Pin, Qiao Jian-Liang, Zeng Yi-Ping. Stability of GaAs photocathodes under different intensities of illumination. Acta Physica Sinica, 2007, 56(10): 6109-6113. doi: 10.7498/aps.56.6109
[19]	Zou Ji-Jun, Chang Ben-Kang, Yang Zhi. Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes. Acta Physica Sinica, 2007, 56(5): 2992-2997. doi: 10.7498/aps.56.2992
[20]	Wu Xian－Yong, Xia Zhong－Fu, An Zhen－Lian, Zhang Peng－Feng. Influence of thickness on charge storage and dynamic properties of nonpolar film electrets. Acta Physica Sinica, 2004, 53(12): 4325-4329. doi: 10.7498/aps.53.4325

Catalog

Vol. 59, Issue 6 - 2010-03-20

Metrics

Abstract views: 8349
PDF Downloads: 750
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板