Effect of Te doping on oxidation resistance and electronic structure of two-dimensional InSe

Miao Rui-Xia; Xie Miao-Chun; Cheng Kai; Li Tian-Tian; Yang Xiao-Feng; Wang Ye-Fei; Zhang De-Dong

doi:10.7498/aps.72.20230004

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Miao Rui-Xia, Xie Miao-Chun, Cheng Kai, Li Tian-Tian, Yang Xiao-Feng, Wang Ye-Fei, Zhang De-Dong. Effect of Te doping on oxidation resistance and electronic structure of two-dimensional InSeJ. Acta Physica Sinica, 2023, 72(12): 123101. DOI: 10.7498/aps.72.20230004

Citation:

Miao Rui-Xia, Xie Miao-Chun, Cheng Kai, Li Tian-Tian, Yang Xiao-Feng, Wang Ye-Fei, Zhang De-Dong. Effect of Te doping on oxidation resistance and electronic structure of two-dimensional InSeJ. Acta Physica Sinica, 2023, 72(12): 123101. DOI: 10.7498/aps.72.20230004

Citation:

Miao Rui-Xia, Xie Miao-Chun, Cheng Kai, Li Tian-Tian, Yang Xiao-Feng, Wang Ye-Fei, Zhang De-Dong. Effect of Te doping on oxidation resistance and electronic structure of two-dimensional InSeJ. Acta Physica Sinica, 2023, 72(12): 123101. DOI: 10.7498/aps.72.20230004