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| 锗硅/硅异质结材料的化学气相淀积生长动力学模型 |
| 戴显英, 金国强, 董洁琼, 王船宝, 赵娴, 楚亚萍, 奚鹏程, 邓文洪, 张鹤鸣, 郝跃 |
| 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071 |
| A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materials |
| Dai Xian-Ying, Jin Guo-Qiang, Dong Jie-Qiong, Wang Chuan-Bao, Zhao Xian, Chu Ya-Ping, Xi Peng-Cheng, Deng Wen-Hong, Zhang He-Ming, Hao Yue |
| School of Microelectronic, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University,Xi,an 710071,China |
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摘要： 基于化学气相淀积(CVD)的Grove理论和Fick第一定律,提出并建立了锗硅(SiGe)/硅(Si)异质结材料减压化学气相淀积(RPCVD)生长动力学模型.与以前锗硅/硅异质结材料生长动力学模型仅考虑表面反应控制不同,本模型同时考虑了表面反应和气相传输两种控制机理,并给出了两种控制机理极限情况下的模型.本模型不仅适用于低温锗硅/硅应变异质结材料生长的表征,也适用于表征高温锗硅/硅弛豫异质结材料生长的表征.将模型计算值与实验结果进行了对比,无论是625℃低温下的应变SiGe的生长,还是900℃高温下的弛豫
关键词：
SiGe/Si异质结材料
化学气相淀积生长动力学模型
Grove理论
Fick第一定律
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Abstract： Based on Grove model of CVD(chemical vapor deposition) and Fick’s first law, we propose and build the RPCVD(reduced pressure chemical vapor deposition) growth kinetics model of GeSi/Si heterojunction materials. Different from previous SiGe/Si kinetics model, which only considers surface reaction controlling mechanism, our model simultaneously considers two controlling mechanisms: surface reaction and vapor transport. We also consider the model at these two controlling mechanism limits. This model is suitable for charactering the growth of both strained GeSi/Si heterojunction materials at low temperatures and relaxed GeSi/Si heterojunction materials at high temperatures. The calculated value of the model is compared with experimental results. Whether for the growth of strained SiGe at low temperature of 625 ℃, or for the growth of relaxed SiGe at high temperature of 900 ℃, the model error are both lower than 10%, which is the subject technical target.
Keywords：
SiGe/Si heterojunction materials
chemical vapor deposition growth kinetics model
Grove model
Fick’s first law
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收稿日期: 2010-11-18
出版日期: 2011-06-15
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| 基金: 国家重点基础研究发展计划(批准号:6139801-1)、国防预研基金(批准号:914A08060407DZ0103)资助的课题. |
| 引用本文: |
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戴显英,金国强,董洁琼 等 . 锗硅/硅异质结材料的化学气相淀积生长动力学模型. 物理学报, 2011, 60(6): 065101.
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| Cite this article: |
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Dai Xian-Ying,Jin Guo-Qiang,Dong Jie-Qiong et al. A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materials. Acta Phys. Sin., 2011, 60(6): 065101.
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| URL: |
| http://wulixb.iphy.ac.cn/CN/Y2011/V60/I6/065101 |
| [1] | Dai X Y, Hao D Y, Zhang H M, Hu H Y, Lü Y 2004 J. Xidian Univ. 31 338 (in Chinese)[戴显英、郝冬艳、张鹤鸣、湖辉勇、吕 懿 2004 西安电子科技大学学报 31 338]
|
| [2] | Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese)[宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 物理学报 57 5918]
|
| [3] | Hu H Y, Zhang H M, Dai X Y 2005 Chin. Phys. 14 1439
|
| [4] | Jiang T, Zhang H M, Wang W, Hu H Y, Dai X Ying 2006 Chin. Phys. 15 1339
|
| [5] | Wen S T, Zhang H W, Zhang L W, Chen G R, Lu J X 2010 Acta Phys. Sin. 59 491 (in Chinese)[文书堂、张红卫、张丽伟、陈改荣、卢景霄 2010 物理学报 59 4901]
|
| [6] | Jang S M, Reif R 1991 Appl. Phys. Lett. 59 3162
|
| [7] | Russell N M, Breiland W G 1993 J. Appl. Phys. 73 3525
|
| [8] | Kamins T I, Meyer D J 1991 Appl. Phys. Letts. 59 178
|
| [9] | Jin X J, Liang J W 1996 Acta Electron. Sin. 24 7 (in Chinese) [金晓军、梁骏吾 1996 电子学报 24 7]
|
| [10] | Wang Y Y, Guan X D, Ma J R 1989 Fundamental of Integrated Civcuit Process p256(in Chinese)[王阳元、关旭东、马俊如 1989 集成电路工艺基础 (北京:北京大学出版社) 第256页]
|
| [11] | Grove A S 1966 Industr. Eng. Chem. 58 48
|
| [12] | Gates S M, Kulkarni S K 1991 Appl. Phys. Lett. 58 2963
|
| [13] | Fitch J T 1994 J. Electrochem. Sci. 141 1046
|
| [14] | Kongetira P, Neudeck G, Takoudis C G 1997 J. Vac. Sci. Technol. B 15 1902
|
| [15] | Yu Z, Li D Z, Cheng B W 2000 Chin. J. Semicond. 21 564 (in Chinese)[于 卓、李代宗、成步文 2000 半导体学报 21 564]
|
| [16] | Robbins D J, Glasper J L, Cullis A G 1991 Appl. Phys. 69 3729
|
| [17] | Ye Z Z, Lü J G, Lü B 2008 Semicondnctor Film Technigue and Physics p81 (in Chinese)[叶志镇、吕建国、吕 斌 2008 半导体薄膜技术与物理 (杭州:浙江大学出版社)第81页]
|
| [18] | Hartmann J M 2007 J. Cryst. Growth 305 113
|
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2011, Vol. 60 
