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锗硅/硅异质结材料的化学气相淀积生长动力学模型 |
戴显英, 金国强, 董洁琼, 王船宝, 赵娴, 楚亚萍, 奚鹏程, 邓文洪, 张鹤鸣, 郝跃 |
西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071 |
A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materials |
Dai Xian-Ying, Jin Guo-Qiang, Dong Jie-Qiong, Wang Chuan-Bao, Zhao Xian, Chu Ya-Ping, Xi Peng-Cheng, Deng Wen-Hong, Zhang He-Ming, Hao Yue |
School of Microelectronic, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University,Xi,an 710071,China |
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摘要: 基于化学气相淀积(CVD)的Grove理论和Fick第一定律,提出并建立了锗硅(SiGe)/硅(Si)异质结材料减压化学气相淀积(RPCVD)生长动力学模型.与以前锗硅/硅异质结材料生长动力学模型仅考虑表面反应控制不同,本模型同时考虑了表面反应和气相传输两种控制机理,并给出了两种控制机理极限情况下的模型.本模型不仅适用于低温锗硅/硅应变异质结材料生长的表征,也适用于表征高温锗硅/硅弛豫异质结材料生长的表征.将模型计算值与实验结果进行了对比,无论是625℃低温下的应变SiGe的生长,还是900℃高温下的弛豫
关键词:
SiGe/Si异质结材料
化学气相淀积生长动力学模型
Grove理论
Fick第一定律
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Abstract: Based on Grove model of CVD(chemical vapor deposition) and Fick’s first law, we propose and build the RPCVD(reduced pressure chemical vapor deposition) growth kinetics model of GeSi/Si heterojunction materials. Different from previous SiGe/Si kinetics model, which only considers surface reaction controlling mechanism, our model simultaneously considers two controlling mechanisms: surface reaction and vapor transport. We also consider the model at these two controlling mechanism limits. This model is suitable for charactering the growth of both strained GeSi/Si heterojunction materials at low temperatures and relaxed GeSi/Si heterojunction materials at high temperatures. The calculated value of the model is compared with experimental results. Whether for the growth of strained SiGe at low temperature of 625 ℃, or for the growth of relaxed SiGe at high temperature of 900 ℃, the model error are both lower than 10%, which is the subject technical target.
Keywords:
SiGe/Si heterojunction materials
chemical vapor deposition growth kinetics model
Grove model
Fick’s first law
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收稿日期: 2010-11-18
出版日期: 2011-06-15
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基金: 国家重点基础研究发展计划(批准号:6139801-1)、国防预研基金(批准号:914A08060407DZ0103)资助的课题. |
引用本文: |
戴显英,金国强,董洁琼 等 . 锗硅/硅异质结材料的化学气相淀积生长动力学模型. 物理学报, 2011, 60(6): 065101.
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Cite this article: |
Dai Xian-Ying,Jin Guo-Qiang,Dong Jie-Qiong et al. A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materials. Acta Phys. Sin., 2011, 60(6): 065101.
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URL: |
http://wulixb.iphy.ac.cn/CN/Y2011/V60/I6/065101 |
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