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以自旋为编码单元的硅基半导体量子计算与传统微电子工艺兼容,易拓展且可以同位素纯化提高退相干时间,因而备受关注。本研究工作通过分子束外延生长了高质量非掺杂型Si/SiGe异质结并测试了二维电子气迁移率。球差电镜观察到原子级尖锐界面,原子力显微镜表征显示其表面均方根粗糙度仅为0.44 nm,低温下迁移率达到20.21×104 cm2·V-1·s-1。不同栅压下载流子浓度和迁移率的幂指数为1.026,材料丁格比值在7到12之间,表明载流子主要受到背景杂质散射和半导体/氧化物的界面散射。
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关键词:
- Si/SiGe异质结 /
- 二维电子气 /
- 霍尔迁移率 /
- 硅基量子计算
Silicon-based semiconductor quantum dot quantum computing coding with spin is compatible with traditional microelectronic processes, easy to expand, and can be isotope purified to improve the decoherence time, so it has attracted much attention. There are fewer reports on the work related to undoped Si/SiGe heterostructures grown by molecular beam epitaxy compared with chemical vapor deposition. An undoped Si/SiGe heterostructure has been grown by molecular beam epitaxy. The scanning transmission electron microscopy and energy-dispersive spectroscopy mapping results show an atomic-scale interface with a characteristic length of 0.53 nm. The surface root-mean-square roughness measured by atomic force microscope is 0.44 nm. The X-ray diffraction data show that the Si quantum well is fully strained and the in-plane strain is 1.03%. In addition, the performance of the two-dimensional electron gas was evaluated by low-temperature Hall measurements, which were conducted in the Hall-bar shaped field-effect transistor. It shows a peak mobility of 20.21×104 cm2·V-1·s-1 when the carrier density is about 6.265×1011 cm-2 at 250 mK. The percolation density is 1.465×1011 cm-2. The effective mass of the two-dimensional electron gas is approximately 0.19 m0. The power exponential relationship (1.026) between carrier density and mobility at different gate voltages, along with the Dingle ratio (7-12) of the two-dimensional electron gas, indicates that the electrons are scattered by background impurities and semiconductor/oxide interfaces charges. The atomically sharp interface of Si/SiGe heterostructures created by molecular beam epitaxy is beneficial for researching the valley physics properties in silicon. The structural and transport characterizations in this paper lay the foundation for the optimization of Si-based semiconductor quantum dot quantum computing materials.-
Keywords:
- Si/SiGe Heterojunction /
- Two-dimensional electronic gas /
- Hall mobility /
- Si-based Quantum computing
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