纳米器件电流噪声的散射理论统一模型研究

摘要
参考文献
相关文章

全文: PDF (1225 KB) HTML (0 KB) 导出: BibTeX | EndNote (RIS) Supporting Info

摘要：传统散射理论在研究器件噪声特性时,并没有考虑非相干输运和库仑作用对散粒噪声的抑制,而在实际纳米器件中这两种效应不可忽略.本文基于散射区等效接触端模型推导了考虑上述两种效应的电流噪声散射理论统一模型,该模型适用于从相干输运到非相干输运的整个输运区,并同时考虑了泡利不相容原理和库仑作用对散粒噪声的抑制.本文也提出了一种基于统一模型的电流噪声数值模拟方法,该方法所得散射区特性与散射区等效接触端模型特性一致.
关键词：电流噪声散射理论统一模型

	服务

	把本文推荐给朋友
	加入引用管理器
	E-mail Alert
	RSS
	作者相关文章
	唐冬和
	杜磊
	王婷岚
	陈华
	贾晓菲

Abstract： In the study of the noise characteristics of devices by traditional scattering theory,the incoherent transport and the effect of Coulomb interaction on shot noise are not taken into account, which may not be ignored in real nanoscale devices. Based on the equivalent contact model of the scattering region, we derive a unified scattering theory model for current noise, including the effects mentioned above. Our model covers the whole range of transport regime from coherent transport to incoherent transport. Our model also includes the effects of Pauli exclusion and Coulomb interaction on shot noise. Then, a numerical simulation approach is presented for our model. The approach coincides with the equivalent contact model in the property of the scattering region.
Keywords： current noise scattering theory unified model

收稿日期: 2010-11-12 出版日期: 2011-09-15

PACS:	72.70. +m
	72.10. -d
	73.23. -b

基金: 国家自然科学基金(批准号:60376023)资助的课题.

引用本文:

唐冬和,杜磊,王婷岚等 . 纳米器件电流噪声的散射理论统一模型研究. 物理学报, 2011, 60(9): 097202.

Cite this article:

Tang Dong-He,Du Lei,Wang Ting-Lan et al. A unified scattering theory model for current noise in nanoscale devices. Acta Phys. Sin., 2011, 60(9): 097202.

URL:

http://wulixb.iphy.ac.cn/CN/Y2011/V60/I9/097202

[1]	Landauer R 1957 Ibm. J. Res. Dev. 1 223
[2]	Büttiker M 1986 Phys. Rev. Lett. 57 1761
[3]	Büttiker M 1990 Phys. Rev. Lett. 65 2901
[4]	Martin T,Landauer R 1992 Phys. Rev. B 45 1742
[5]	Do V,Dollfus P,Nguyen V 2007 Phys. Rev. B 76 125309
[6]	Zhang Z Y,Wang T H 2004 Acta Phy. Sin. 53 942 (in Chinese) [张志勇、王太宏 2004 物理学报 53 942]
[7]	An X T,Li Y X,Liu J J 2007 Acta Phy. Sin. 56 4105 (in Chinese) [安兴涛、李玉现、刘建军 2007 物理学报 56 4105]
[8]	Venugopal R,Paulsson M,Goasguen S,Datta S,Lundstrom M 2003 J. Appl. Phys. 93 5613
[9]	Büttiker M 1991 Physica B: Condensed Matter 175 199
[10]	Betti A,Fiori G,Iannaccone G 2010 Phys. Rev. B 81 035329
[11]	Büttiker M 1992 Phys. Rev. B 46 12485
[12]	Blanter Y,Büttiker M 2000 Physics Reports 336 1
[13]	Martin M,Rengel R,Pascual E,Lusakowski J,Knap W,Gonzalez T 2008 Physica Status Solidi (C) 5 123
[14]	Van der Ziel A 1986 Noise in solid state devices and circuits(New York:Wiley) 16 and 75—78
[15]	Datta S 1995 Electronic transport in mesoscopic systems(London:Cambridge University Press) 307—311
[16]	Svizhenko A,Anantram M 2003 IEEE Trans. Electr. Dev. 50 1459
[17]	Naveh Y,Averin D,Likharev K 1998 Phys. Rev. B 58 15371
[18]	González T,Mateos J,Pardo D,Bulashenko O,Reggiani L 1999 Phys. Rev. B 60 2670