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等离子体源离子注入与沉积技术作为一种可生产高结合力、高致密度涂层的真空镀膜技术，具有广阔的应用前景，尤其适用于高载荷工况下服役的功能涂层制备. 该技术中金属等离子体源是关键，而现有的脉冲阴极弧源结构复杂，且由于伴随金属液滴而需要增加过滤装置. 本文研究了另一种简单结构的金属等离子体源备选-高功率脉冲磁控溅射源（HPPMS）的放电特性，采用等离子体发射光谱仪探索了不同的耦合高压对HPPMS放电靶电流特性和等离子体特性的作用. 发现耦合高压对HPPMS放电有明显的促进作用，相同靶电压下的放电强度大幅增加，相对于金属放电，耦合高压对气体放电的促进作用更加明显，但在自溅射为主的高压放电阶段对金属放电的促进作用明显增强. 讨论了耦合高压对HPPMS放电的增强机制，发现耦合高压自辉光放电、耦合高压和HPPMS电压构成双向负压形成的空心阴极效应，以及耦合高压鞘层改善的双极扩散效应都对HPPMS放电的增强有明显作用.Plasma source ion implantation and deposition, as an effective technology to produce functional coatings with high adhesion and density, possesses the wide application prospect, especially in the deposition of coatings that work in high loading service conditions. The key component of this technology is the metal plasma source, which is now based on pulsed cathodic arc with complex source structure and magnetic filtration because of the macro-droplets in the ion flux. In this paper, we present another metal plasma source, high power pulsed magnetron sputtering (HPPMS), and investigate the discharge characteristics at different coupling high-voltages by optical emission spectroscopy. The results show that significant improvements are found in the discharge target current and main particles in the plasma. The improvement in gas discharge by the coupling high-voltage is greater than in metal discharge which could increase obviously in the self-sputtering stage with higher target voltage discharge. Last but not least, in this paper we discuss the discharge enhancing mechanism of coupling high-voltage. It is found that the self-excited glow discharge of coupling high-voltage, the hollow-cathodic effect induced by face-to-face negative voltages of HPPMS and coupling high-voltage, and the enhanced ambipolar diffusion of the coupling high-voltage can all play a considerable role in HPPMS discharge.
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Keywords:
- high power pulsed magnetron sputtering /
- coupling high-voltage /
- discharge target current /
- plasma optical emission spectroscopy
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[14] Tian X B, Wu Z Z, Gong C Z 2010 China Patent 201010213894.4 2010-06 (in Chinese)[田修波, 吴忠振, 巩春志 2010 中国专利 201010213894.4 2010-06]
[15] Wu Z Z, Tian X B, Shi J W, Gong C Z, Yang S Q, Chu P K 2011 Rev. Sci. Instrum. 69 033511
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[18] Duan W Z 2010 M.S. Dissertation (Harbin: Harbin Institute of Technology) (in Chinese)[段伟赞 2010 硕士学位论文 (哈尔滨: 哈尔滨工业大学)]
[19] Tian X B, Wu Z Z, Shi J W, Li X P, Gong C Z, Yang S Q 2010 Chin. Vac. 47 44 (in Chinese)[田修波, 吴忠振, 石经纬, 李希平, 巩春志, 杨士勤 2010 真空 47 44]
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[21] Duan W Z 2011 M.S. Dissertation (Harbin: Harbin Institute of Technology) (in Chinese)[段伟赞 2011 硕士学位论文 (哈尔滨: 哈尔滨工业大学)]
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[23] Poucques L D, Imbert J C, Boisse-Laporte C, Bretagne J, Ganciu M, Teul-Gay L, Touzeau M 2006 Czech. J. Phys. 56 B1300
[24] Kadlec S 2007 Plasma Processes Polym. 4 S419
[25] Gong C Z, Zhu Z T, Shi J W, Yang S Q, Tian X B, Chu P K 2010 Surf. Coat. Technol. 204 2996
[26] Oks E, Anders A 2010 Rev. Sci. Instrum. 81 02B306
[27] Wu Z Z, Tian X B, Wang Z M, Gong C Z, Yang S Q 2011 Chin. J. Vac. Sci. Technol. 31 459(in Chinese)[吴忠振, 田修波, 王泽明, 巩春志, 杨士勤 2011 真空科学与技术学报 31 459]
[28] Mu Z X, Mu X D, Wang C, Jia L, Dong C 2011 Acta Phys. Sin. 60 015204(in Chinese)[牟宗信, 牟晓东, 王春, 贾莉, 董闯 2011 物理学报 60 015204]
[29] Wang Z M 2010 M.S. Dissertation (Harbin: Harbin Institute of Technology) (in Chinese)[王泽明 2011 硕士学位论文 (哈尔滨: 哈尔滨工业大学)]
[30] Anders A, Andersson J Ehiasarian A P 2007 J. Appl. Phys. 102 113303
[31] Anders A 2010 J. Vac. Sci. Technol. A 28 783
[32] Wu Z Z, Tian X B, Wei Y Q, Gong C Z, Yang S Q, Pan F, Chu P K 2013 Surf. Coat. Technol. 236 320
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[1] Conrad J R, Castagna T, Am B 1986 Phys. Soc. 31 1479
[2] Li X, Tang Z A, Ma G J, Wu Z M, Deng X L 2003 Chin. Phys. Lett. 20 692
[3] Man B Y, Zhang Y H, L G H, Liu A H, Zhang Q G, Guzman L, Adami M, Miotello A 2005 Acta Phys. Sin. 54 837(in Chinese)[满宝元, 张运海, 吕国华, 刘爱华, 张庆刚, Guzman L, Adami M, Miotello A 2005 物理学报 54 837]
[4] Bilek M M M, McKenziea D R, Tarranta R N, Limb S H M, McCulloch D G 2002 Surf. Coat. Technol. 156 136
[5] Zhang G L, Wang J L, Liu Y F, Liu C Z, Yang S Z 2004 Chin. Phys. 13 1309
[6] Liu J, Liu B W, Xia Y, Li C B, Liu S 2012 Acta Phys. Sin. 61 148102(in Chinese)[刘杰, 刘邦武, 夏洋, 李超波, 刘肃 2012 物理学报 61 148102]
[7] Anders A 1997 Surf. Coat. Technol. 93 158
[8] Anders S, Anders A, Dickinson M R, MacGilt R A, Brown I G 1996 Proc. of XVⅡth Int. Symp. Disch. El. Insul. Vacuum Berkeley, USA, July 2-6, 1996 p904
[9] Kouznetsov V, Maca'k K, Schneider J M, Helmersson U, Petrov I 1999 Surf. Coat. Technol. 122 290
[10] Bohlmark J, Gudmundsson J T, Alami J, Latteman M, Helmersson U 2005 IEEE Trans. Plasma Sci. 33 346
[11] Bohlmark J, Lattemann M, Gudmundsson J T, Ehiasarian A P, Gonzalvo Y A, Brenning N, Helmersson U 2006 Thin Solid Films 515 1522
[12] Horwat D, Anders A 2008 J. Phys. D: Appl. Phys. 41 135210
[13] Ehiasarian A P, Gonzalvo Y A, Whitmore T D 2007 Plasma Processes Polym. 4 S309
[14] Tian X B, Wu Z Z, Gong C Z 2010 China Patent 201010213894.4 2010-06 (in Chinese)[田修波, 吴忠振, 巩春志 2010 中国专利 201010213894.4 2010-06]
[15] Wu Z Z, Tian X B, Shi J W, Gong C Z, Yang S Q, Chu P K 2011 Rev. Sci. Instrum. 69 033511
[16] Wu Z Z, Tian X B, Gong C Z, Yang S Q 2013 Rare Metal Mater. Eng. 42 405 (in Chinese)[吴忠振, 田修波, 巩春志, 杨士勤2013 稀有金属材料与工程 42 405]
[17] Wu Z Z, Tian X B, Wang Z M, Gong C Z, Yang S Q, Tan C M 2011 Appl. Surf. Sci. 258 242
[18] Duan W Z 2010 M.S. Dissertation (Harbin: Harbin Institute of Technology) (in Chinese)[段伟赞 2010 硕士学位论文 (哈尔滨: 哈尔滨工业大学)]
[19] Tian X B, Wu Z Z, Shi J W, Li X P, Gong C Z, Yang S Q 2010 Chin. Vac. 47 44 (in Chinese)[田修波, 吴忠振, 石经纬, 李希平, 巩春志, 杨士勤 2010 真空 47 44]
[20] Carsten E, George C, Chan G, Buscher W, Hieftje G M 2008 Spectrochim. Acta B 7 619
[21] Duan W Z 2011 M.S. Dissertation (Harbin: Harbin Institute of Technology) (in Chinese)[段伟赞 2011 硕士学位论文 (哈尔滨: 哈尔滨工业大学)]
[22] Kirsch B, Hanamura S, Wineforder J D 1984 Spectrochim. Acta B 39 955
[23] Poucques L D, Imbert J C, Boisse-Laporte C, Bretagne J, Ganciu M, Teul-Gay L, Touzeau M 2006 Czech. J. Phys. 56 B1300
[24] Kadlec S 2007 Plasma Processes Polym. 4 S419
[25] Gong C Z, Zhu Z T, Shi J W, Yang S Q, Tian X B, Chu P K 2010 Surf. Coat. Technol. 204 2996
[26] Oks E, Anders A 2010 Rev. Sci. Instrum. 81 02B306
[27] Wu Z Z, Tian X B, Wang Z M, Gong C Z, Yang S Q 2011 Chin. J. Vac. Sci. Technol. 31 459(in Chinese)[吴忠振, 田修波, 王泽明, 巩春志, 杨士勤 2011 真空科学与技术学报 31 459]
[28] Mu Z X, Mu X D, Wang C, Jia L, Dong C 2011 Acta Phys. Sin. 60 015204(in Chinese)[牟宗信, 牟晓东, 王春, 贾莉, 董闯 2011 物理学报 60 015204]
[29] Wang Z M 2010 M.S. Dissertation (Harbin: Harbin Institute of Technology) (in Chinese)[王泽明 2011 硕士学位论文 (哈尔滨: 哈尔滨工业大学)]
[30] Anders A, Andersson J Ehiasarian A P 2007 J. Appl. Phys. 102 113303
[31] Anders A 2010 J. Vac. Sci. Technol. A 28 783
[32] Wu Z Z, Tian X B, Wei Y Q, Gong C Z, Yang S Q, Pan F, Chu P K 2013 Surf. Coat. Technol. 236 320
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