Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET
Acta Physica Sinica
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Acta Phys. Sin.  2005, Vol. 54 Issue (1): 348-353    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET
Liu Zhong-Li1, Zhang Guo-Qiang1, Li Ning1, Fan Kai1, Zheng Zhong-Shan2, Zhang En-Xia3, Yi Wan-Bing3, Chen Meng3, Wang Xi3
(1)中国科学院半导体研究所微电子研究与发展中心,北京 100083; (2)中国科学院半导体研究所微电子研究与发展中心,北京 100083;济南大学物理系,济南 250022; (3)中国科学院上海微系统与信息技术研究所,上海 200050
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