-
[1] Hu H Y, Zhang H M, Jia X Z 2007 Chinese Journal of Semiconductors 28 36
[2] Shu Zh Y, Yang H D 2006 Chin. Phys. 15 1374
[3] Song J J, Zhang H M, Xuan R X, Hu H Y, Dai X Y 2009 Acta Phys. Sin. 58 7947 (in Chinese) [宋建军、张鹤鸣、宣荣喜、胡辉勇、戴显英 2009 物理学报 58 7947]
[4] Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese) [宋建军、张鹤鸣、胡辉勇、宣荣喜、戴显英 2009 物理学报 58 4958]
[5] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 2064 (in Chinese) [宋建军、张鹤鸣、胡辉勇、戴显英、宣荣喜 2010 物理学报 59 2064]
[6] Philippe D 1997 J. Appl. Phys. 82 3911
[7] Siddhartha D, Hans K, Vassil P, Stephan E U, Siegfried S 2005 IEEE Transactions on. Electron Devices 52 527
[8] Karlheinz S 1982 Semiconductor Physics: An Introduction p163
[9] Phuong H N, Hofmann K R 2003 J. Appl Phys. 94 375
[10] Ye L X 1992 Monte Carlo Simulation of Small-Size Devices (Beijing: Science Press) p36 9 (in Chinese) [叶良修 1992 小尺寸半导体器件的蒙特卡罗模拟.第一版(北京:科学出版社)第369页]
[11] Tang J Y, Hess K 1983 J. Appl Phys. 54 5145
[12] Vogelsang Th, Hofman K R 1992 IEEE Transactions on. Electron Devices 39 2641
[13] Soline R Nicolas C, Frederic A, Guy F 2003 J. Appl. Phys. 94 5088
[14] Liu E K, Zhu B S, Luo J S 1994 Semiconductor Physics (Beijing: Defense Industry Press) p98 (in Chinese) [刘恩科、 朱秉升、 罗晋生 1994 半导体物理学(北京:国防工业出版社)第98页]
[15] Karlowatz G, Ungersboeck E, Wessner W, Kosina H 2006 IEEE 63
-
[1] Hu H Y, Zhang H M, Jia X Z 2007 Chinese Journal of Semiconductors 28 36
[2] Shu Zh Y, Yang H D 2006 Chin. Phys. 15 1374
[3] Song J J, Zhang H M, Xuan R X, Hu H Y, Dai X Y 2009 Acta Phys. Sin. 58 7947 (in Chinese) [宋建军、张鹤鸣、宣荣喜、胡辉勇、戴显英 2009 物理学报 58 7947]
[4] Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese) [宋建军、张鹤鸣、胡辉勇、宣荣喜、戴显英 2009 物理学报 58 4958]
[5] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 2064 (in Chinese) [宋建军、张鹤鸣、胡辉勇、戴显英、宣荣喜 2010 物理学报 59 2064]
[6] Philippe D 1997 J. Appl. Phys. 82 3911
[7] Siddhartha D, Hans K, Vassil P, Stephan E U, Siegfried S 2005 IEEE Transactions on. Electron Devices 52 527
[8] Karlheinz S 1982 Semiconductor Physics: An Introduction p163
[9] Phuong H N, Hofmann K R 2003 J. Appl Phys. 94 375
[10] Ye L X 1992 Monte Carlo Simulation of Small-Size Devices (Beijing: Science Press) p36 9 (in Chinese) [叶良修 1992 小尺寸半导体器件的蒙特卡罗模拟.第一版(北京:科学出版社)第369页]
[11] Tang J Y, Hess K 1983 J. Appl Phys. 54 5145
[12] Vogelsang Th, Hofman K R 1992 IEEE Transactions on. Electron Devices 39 2641
[13] Soline R Nicolas C, Frederic A, Guy F 2003 J. Appl. Phys. 94 5088
[14] Liu E K, Zhu B S, Luo J S 1994 Semiconductor Physics (Beijing: Defense Industry Press) p98 (in Chinese) [刘恩科、 朱秉升、 罗晋生 1994 半导体物理学(北京:国防工业出版社)第98页]
[15] Karlowatz G, Ungersboeck E, Wessner W, Kosina H 2006 IEEE 63
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