Model of electron mobility in inversion layer of strained Si/Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub> n type metal-oxide-semiconductor field-effect transistors
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (1): 017202    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors
Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China
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