Acta Physica Sinica
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Acta Physica Sinica  2017, Vol. 66 Issue (15): .     DOI: 10.7498/aps.66.158501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode
Shi Qiang1,2, Li Lu-Ping1,2, Zhang Yong-Hui1,2, Zhang Zi-Hui1,2, Bi Wen-Gang1,2
1, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China;
2. Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China

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