[1] Kamath A, Patil T, Adari R, Bhattacharya I, Ganguly S, Aldhaheri R W, Hussain M A, Dipankar S 2012 IEEE Electron Device Lett. 33 1690
[2] Hidetoshi I, Daisuke S, Manabu Y, Yasuhiro U, Hisayoshi M, Tetsuzo U, Tsuyaoshi T, Daisuke U 2008 IEEE Transactions on Electron Devices 29 1087
[3] Johnson J. W., Zhang A. P., Luo W B, Fan R, Pearton S. J., Park S. S., Park Y. J., Chyi J I 2003 IEEE Electron. Device Lett. 24 32
[4] Huang T D, Zhu X L, Wong K M, Lau K M 2012 IEEE Electron Device Lett. 33 212
[5] Corrion A L, Poblenz C, Wu F, Speck J S 2008 Journal Appl. Phy.130 093529
[6] Hidetoshi I, Daisuke S, Manabu Y, Yasuhiro U, Hisayoshi M, Tetsuzo U, Tsuyoshi T, Daisuke U 2008 IEEE Electron Device Lett. 29 1087
[7] Zhou C H, Jiang Q M, Huang S, Chen K J 2012 IEEE Electron Device Lett. 33 1132
[8] Corrion A L, Poblenz C, Wu F, Speck J S 2008 Journal of Appl. Phys.130 093529
[9] Lee J H, Yoo J K, Kang H S, Lee J H 2012 IEEE Electron Device Lett. 33 1171
[10] Lee H S, Daniel P, Sun M, Gao X, Guo S P, Tomas P 2012 IEEE Electron Device Lett. 33 982
[11] Duan B X, Yang Y T 2012 Sci. China Inf. Sci. 55 473
[12] Duan B X, Yang Y T 2012 Micro & Nano Letter 7 9
[13] Subramaniam A, Takashi E, Lawrence S, Hiroyasu I 2006 Japanese Journal of Applied Physics 45 L220
[14] Ando Y., Okamoto Y., Miyamoto H., Nakayama T., Inoue T., Kuzuhara M 2003 IEEE Electron Device Lett. 24 289
[15] Benbakhti B, Rousseau M, De Jaeger J C 2007 Microelectronics Journal 38 7
[16] Jin D, Joh J, Krishnan S, Tipirneni N, Pendharkar S, del Alamo J A 2013 IEEE International Electron Devices Meeting Washington DC. USA Dec. 9-11, 2013, p 6.2.16.2.4
[17] Injun H, Jongseob K, Soogine C, Hyun-Sik C, Sun-Kyu H, Jaejoon O, Jai Kwang S, U-In C 2013 IEEE Electron Device Lett. 34 12 1494
[18] Arulkumaran S, Liu Z H, Ng G I, Cheong W C, Zeng R, Bu J, Wang H, Radhakrishnan K, Tan C L 2007 Thin Solid Films. 515 4517
[19] Chen X B, Johnny K O S 2001 IEEE Transactions on Electron Devices 48 344
[20] Duan B X, Zhang B, Li Z J 2006 IEEE Electron Device Lett. 27 377
[21] Duan B X, Yang Y T, Zhang B, Hong X F 2009 IEEE Electron Device Lett. 30 1329
[22] Duan B X, Yang Y T, Zhang B 2009 IEEE Electron Device Lett. 30 305
[23] Duan B X, Yang Y T 2011 IEEE Transactions on Electron Devices 58 2057
[24] Duan B X, Yang Y T, Zhang B 2010 Solid-State Electronics 54 685
[25] Duan B X, Yang Y T, Chen K J 2012 Acta Phys. Sin. 61 247302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 物理学报 61 247302]
[26] Duan B X, Yang Y T, Kevin J. Chen 2012 Acta Phys. Sin. 61 227302 (in Chinese) [段宝兴, 杨银堂, 陈敬 2012 物理学报 61 227302]
[27] Di S, Jie L, Zhiqun C, Wilson C. W. T, Kei May L, Kevin J. Chen. 2007 IEEE Electron Device Lett. 28 189
[28] Udrea F, Popescu A, Milne W I 1998 Electronics Letters 34 808
[29] Smorchkova I P, Elsass C R, Ibbetson J P, Heying B, Fini P, Den Baars S P, Speck J S, Mishra U K 1999 Journal of Applied Physics 86 4520
[30] Yifei Z, Smorchkova I P, Elsass C R, Stacia K, Ibbetson J P, Jasprit S 2000 Appl. Phys. Lett.87 7981
[31] Ibbetson J P, Fini P T, Ness K D, DenBaars S P, SpeckJ S, Mishra U K 2000 Appl. Phys. Lett. 77 250
[32] Duan B X, Yang Y T 2014 Acta Phys. Sin. 63 057302
[33] DESSIS, ISE TCAD Manuals Release 10., Integrated Systems Engineering, Zurich, Switzerland, 2004