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## THE APPROXIMATE EXPRESSIONS OF THE FOUR LAYER ASYMMETRIC WAVEGUIDE CHARACTERISTICS

WANG DE-NING, PAN HUI-ZHEN
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• #### 摘要

本文在四层不对称波导的归一化电场方程和本征方程基础上,导出了归一化有效折射b表达式和限制因子Γx等的近似关系式,并提出了不对称近场和远场高斯分布的近似表达式。应用上述分析,研究了四层不对称波导的动态特性。文中导出了注入载流子分布,增益分布的解析表达式,可方便地计算模增益,阈值电流密度,最佳有源区厚度和最佳阈值电流密度。并进一步研究了结构参数对器件的影响。

#### Abstract

In this paper, based on the normalized electronic field and the eigenvalue equation for the four layer asymmetric structure, the approximate expressions of the normalized effective index and the radiation confirement factor were introduced, and the approximate equations for the near field and far field asymmetric Gaussian Profile were deduced.Using the above-mentioned analysis, the dynamic characteristics of the four layer asymmetric waveguide was investigated. From this, the analytic expressions of the injected carrier concentration profile and the gain profile were obtained, and the modal gain, the threshold current density, the optimal active layer thickness, and the optimal threshold current density can be calculated.The calculated results of a series of relation were discussed. We study further the structure parameter effect on the device.

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##### 出版历程
• 收稿日期:  1983-09-16
• 刊出日期:  2005-03-28

## 四层不对称波导的一些近似关系式

• 1. 中国科学院上海冶金研究所

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