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物理学报. 2008, 57(3): 1872-1877.
doi: 10.7498/aps.57.1872.
一种N沟VDMOS电离辐射界面陷阱电流传导性研究
- 收稿日期: 2007-06-06
- 修回日期: 2007-07-24
- 刊出日期: 2008-03-20
English Abstract
Study of conductive property for a N-VDMOS interface trap under X-ray radiation
- Received Date:
06 June 2007
- Accepted Date:
24 July 2007
- Published Online:
20 March 2008
Abstract: An N-channel VDMOS I-V curve is measured after X-ray radiation under condition of different power dissipation. It is found that the property of new interface traps induced by X-ray radiation of self-annealing VDMOS sample does not conform to existing theory reasonably well. Based on measured data，we advance the viewpoint that the interface trap has current conductive property besides being charged up, and the conduction is assumed to be the generation or recombination current caused by new interface traps, which can not be simply identified quantitatively from the I-V curve.
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Keywords:
- interface trap /
- subthreshold current /
- X-ray radiation /
- VDMOS
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