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采用高分辨探测系统,在不同的入射角θin和出射角θout的条件下,测量了1—2MeV4He+入射在Al(100)面和Si(110),(100)面中的背散射能谱。得到了背散射能谱振荡峰的间距ΔE与cosθin/cosθout的直线关系,从而获得了1—2MeV4He+在这三个晶面中的振荡半波长及阻止本领。实验得到的半波长与理论计算值在误差范围内一致,晶面沟道方向的阻止本领略大于随机方向的阻止本领。Using a detection system with high resolution, backscattering spectra for 1-2 MeV 4He+ incident along Al (100) and Si(l00) and (110) planes are measured at a variety of entrance (θin) and exit (θout) angles. The energy intervals between the peaks in the energy spectra are plotted as a function of cosθin/cosθout Half wavelength and stopping power for 1-2 MeV 4He+ in these three channeling planes are obtained. The experimental half wavelength is in agreement with the calculated value within the limit of error and the planar channeled stopping power is slightly greater than the random stopping power.
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