MEAM势与Tersoff势比较研究碳化硅熔化与凝固行为

周耐根; 洪涛; 周浪

doi:10.7498/aps.61.028101

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摘要

运用分子动力学方法对比模拟研究了碳化硅的体熔化、表面熔化和晶体生长过程.分别采用MEAM 势和Tersoff势两种势函数描述碳化硅.结果表明:体熔化时,两种势函数描述的SiC的原子平均能量、Lindemann指数和结构有序参数与温度的变化关系相似,但MEAM势对应的体熔点(4250 K)比Tersoff势(4750 K) 的要高.表面熔化时,两种势函数描述的SiC在相同的过热度下熔化速度相近;而在相同的温度条件下,MEAM 作用的SiC表面熔化速度更快.这是由于MEAM势SiC的热力学熔点(3338 K)低于Tersoff势SiC的热力学熔点(3430 K)的缘故.两种势函数作用的SiC在晶体生长方面差异很大.MEAM势SiC的晶体生长速度与过冷度有关, 过冷度约为400 K时晶体生长速度最快.但Tersoff势SiC晶体却在过冷度为01000 K的范围内均不能生长. 综合考虑,MEAM势比Tersoff势能更好地描述碳化硅的熔化和凝固行为.

关键词:

碳化硅 /
势函数 /
熔化 /
晶体生长

作者及机构信息

1.
南昌大学材料科学与工程学院, 南昌 330031

基金项目: 国家自然科学基金(批准号:10502024)资助的课题.

参考文献

[1]	Morkoc S S, Gao G B, Lin M E, Sverdlov B, Burns M 1994 J. Appl. Phys. 76 1363
[2]	Lely J A 1955 Ber.Deut.Keram.Ges 32 229
[3]	Straughan V E, Mayer E F 1960 (Pergamon Press) pp84—93
[4]	Muller S G, Glass R C, Hobgood H M, Tsvetkov V F, Brady M, Henshall D, Malta D, Singh R, Palmour J, Carter C H 2001 Materials Science and Engineering B-Solid State Materials for Advanced Technology 80 327
[5]	Lei Y, Chen Z N 1997 Acta Phys. Sin. 46 0511(in Chinese) [雷雨,程兆年 1997 物理学报 46 0511]
[6]	Kluge M D, Ray J R 1988 Phys. Rev. B 39 1738
[7]	Baskes M I 1992 Phys. Rev. B 46 2727
[8]	Erhart P, Albe K 2005 Phys. Rev. B 71 035211
[9]	Tersoff J 1989 Phys. Rev. B 39 5566
[10]	Tang M J, Yip S 1995 Phys. Rev. B 52 15150
[11]	Tang M J, Yip S 2009 J. Appl. Phys. 76 2719
[12]	Prskalo A P, Schmauder S, Ziebert C, Ye J, Ulrich S 2010 Surface and Coatings Technology 204 2081
[13]	Huang H C, Ghoniem N M,Wong J K, Baskes M 1995 Modelling Simul. Mater. Sci. Eng. 3 615
[14]	Shen H J 2007 J. Mater. Sci. 42 6382
[15]	Chatterjee A,Kalia R K, Nakano A, Omeltchenko A, Tsuruta K, Vashishta P, Loong C K,Winterer M, Klein S 2000 Appl.Phys.Lett. 77 1132
[16]	Baskes M I 1987 Phys. Rev. L 59 2666
[17]	Baskes M I, Nelson J S, Wright A F 1989 Phys. Rev. B 40 6085
[18]	Brenner D W 1990 Phys. Rev. B 42 9458
[19]	Lindemann F 1910 J. Physik. Z. 11 609
[20]	Zhou Y Q, Karplus M, Ball K D, Stephen Berry R 2002 J. Chem. Phys. 116 2323
[21]	Wang H L, Wang X X, Liang H Y 2005 Acta Metall. Sin. 41 568 (in Chinese) [王海龙,王秀喜,梁海弋 2005 金属学报 41 568]
[22]	Ding F, Bolton K, Rosen A 2005 European Physical Journal D 34 275
[23]	Mishin Y, Mehl M J, Papaconstantopoulos D A, Voter A F, Kress J D 2001 Phys. Rev. B 63 224106
[24]	Sorkin V, Polturak E, Adler J 2003 Phys. Rev. B 68 174103
[25]	Lutsko J F, Wolf D, Phillpot S R, Yip S 1989 Phys. Rev. B 40 2841
[26]	Massalski T B, Okamoto H, Subramanian P R, Kacprzak L 1990 Binary Alloy Phase Diagrams (Volume 1) (USA:ASM International) p1485

施引文献

[1]	Morkoc S S, Gao G B, Lin M E, Sverdlov B, Burns M 1994 J. Appl. Phys. 76 1363
[2]	Lely J A 1955 Ber.Deut.Keram.Ges 32 229
[3]	Straughan V E, Mayer E F 1960 (Pergamon Press) pp84—93
[4]	Muller S G, Glass R C, Hobgood H M, Tsvetkov V F, Brady M, Henshall D, Malta D, Singh R, Palmour J, Carter C H 2001 Materials Science and Engineering B-Solid State Materials for Advanced Technology 80 327
[5]	Lei Y, Chen Z N 1997 Acta Phys. Sin. 46 0511(in Chinese) [雷雨,程兆年 1997 物理学报 46 0511]
[6]	Kluge M D, Ray J R 1988 Phys. Rev. B 39 1738
[7]	Baskes M I 1992 Phys. Rev. B 46 2727
[8]	Erhart P, Albe K 2005 Phys. Rev. B 71 035211
[9]	Tersoff J 1989 Phys. Rev. B 39 5566
[10]	Tang M J, Yip S 1995 Phys. Rev. B 52 15150
[11]	Tang M J, Yip S 2009 J. Appl. Phys. 76 2719
[12]	Prskalo A P, Schmauder S, Ziebert C, Ye J, Ulrich S 2010 Surface and Coatings Technology 204 2081
[13]	Huang H C, Ghoniem N M,Wong J K, Baskes M 1995 Modelling Simul. Mater. Sci. Eng. 3 615
[14]	Shen H J 2007 J. Mater. Sci. 42 6382
[15]	Chatterjee A,Kalia R K, Nakano A, Omeltchenko A, Tsuruta K, Vashishta P, Loong C K,Winterer M, Klein S 2000 Appl.Phys.Lett. 77 1132
[16]	Baskes M I 1987 Phys. Rev. L 59 2666
[17]	Baskes M I, Nelson J S, Wright A F 1989 Phys. Rev. B 40 6085
[18]	Brenner D W 1990 Phys. Rev. B 42 9458
[19]	Lindemann F 1910 J. Physik. Z. 11 609
[20]	Zhou Y Q, Karplus M, Ball K D, Stephen Berry R 2002 J. Chem. Phys. 116 2323
[21]	Wang H L, Wang X X, Liang H Y 2005 Acta Metall. Sin. 41 568 (in Chinese) [王海龙,王秀喜,梁海弋 2005 金属学报 41 568]
[22]	Ding F, Bolton K, Rosen A 2005 European Physical Journal D 34 275
[23]	Mishin Y, Mehl M J, Papaconstantopoulos D A, Voter A F, Kress J D 2001 Phys. Rev. B 63 224106
[24]	Sorkin V, Polturak E, Adler J 2003 Phys. Rev. B 68 174103
[25]	Lutsko J F, Wolf D, Phillpot S R, Yip S 1989 Phys. Rev. B 40 2841
[26]	Massalski T B, Okamoto H, Subramanian P R, Kacprzak L 1990 Binary Alloy Phase Diagrams (Volume 1) (USA:ASM International) p1485

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MEAM势与Tersoff势比较研究碳化硅熔化与凝固行为

1. 南昌大学材料科学与工程学院, 南昌 330031

基金项目:

国家自然科学基金(批准号:10502024)资助的课题.

收稿日期: 2011-04-12

修回日期: 2011-05-07

刊出日期: 2012-01-05

摘要: 运用分子动力学方法对比模拟研究了碳化硅的体熔化、表面熔化和晶体生长过程.分别采用MEAM 势和Tersoff势两种势函数描述碳化硅.结果表明:体熔化时,两种势函数描述的SiC的原子平均能量、Lindemann指数和结构有序参数与温度的变化关系相似,但MEAM势对应的体熔点(4250 K)比Tersoff势(4750 K) 的要高.表面熔化时,两种势函数描述的SiC在相同的过热度下熔化速度相近;而在相同的温度条件下,MEAM 作用的SiC表面熔化速度更快.这是由于MEAM势SiC的热力学熔点(3338 K)低于Tersoff势SiC的热力学熔点(3430 K)的缘故.两种势函数作用的SiC在晶体生长方面差异很大.MEAM势SiC的晶体生长速度与过冷度有关, 过冷度约为400 K时晶体生长速度最快.但Tersoff势SiC晶体却在过冷度为01000 K的范围内均不能生长. 综合考虑,MEAM势比Tersoff势能更好地描述碳化硅的熔化和凝固行为.

关键词:

碳化硅 /
势函数 /
熔化 /
晶体生长

A comparative study between MEAM and Tersoff potentials on the characteristics of melting and solidification of carborundum

1.
School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China

Fund Project:

Project supported by the National Natural Science Foundation of China (Grant No. 10502024).

Received Date: 12 April 2011

Accepted Date: 07 May 2011

Published Online: 05 January 2012

Abstract: Molecular dynamic simulations of bulk melting, surface melting and crystal growth of SiC are carried out. The atomic interactions in SiC are calculated by MEAM and Tersoff potentials separately. The results show that the bulk melting of SiC with MEAM potential exhibits its relations to temperature similar to that with Tersoff potential, while can be indicated by the mean atomic energy, Lindemann index and structure order parameter. The difference between them is the bulk melt point: MEAM is 4250 K, while Tersoff is 4750 K. At the same superheat degree, the velocities of surface melting of SiC separately, with MEAM and Tersoff potentials are in substantial agreement. But at the same absolute temperature, the surface melting of SiC with MEAM potential is faster than that which the Tersoff potential, which is due to the difference in thermodynamic melting point. The Measured value of the thermodynamic melting point of MEAM is 3338 K compared with 3430 K of Tersoff. On the crystal growth side, the crystal growth velocity of SiC with MEAM potential is related to the undercooling. The fastest velocity corresponds to the undercooling of 400 K. However, the crystal of SiC with Tersoff potential cannot grow in the undercooling of 0 K1000 K. Overall, the MEAM potential is better than Tersoff potential in the sense of describing the melting and solidification of carborundum.

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