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采用异质叠层方式制备出一定厚度的Ca(Mg1/3Nb2/3)O3/CaTiO3(CMN/CT)叠层薄膜,研究了异质界面对薄膜结构、微观形貌及介电性能的影响及其规律.根据实验测试结果,提出CMN/CT叠层薄膜的模拟等效电路,建立介电常数和介电损耗的理论计算公式.结果表明:CMN/CT异质叠层薄膜具有完全正交钙钛矿结构,结构致密,厚度均匀,薄膜中存在独立的CMN和CT相.异质界面处存在过渡层,随着薄膜中异质界面个数增加,介电常数增大,介电损耗减小.减小界面过渡层的厚度,有利于提高CMN/CT叠层薄膜的介电性能.
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关键词:
- 异质界面 /
- CMN/CT叠层薄膜 /
- 介电性能 /
- 等效电路
[1] Kanno I, Hayashi S, Takayama R, Hirao T 1996 Appl. Phys. Lett. 68 328
[2] [3] Zhou J P, He H C, Shi Z, Nan C W 2006 Appl. Phys. Lett. 88 013111-1
[4] Qu B D, Evstigneev M, Johnson D J, Prince R H 1998 Appl. Phys. Lett. 72 1394
[5] [6] ONeill D, Bowman R M, Gregg J M 2000 Appl. Phys. Lett. 77 1520
[7] [8] Schmidt R, Eerenstein W, Winiecki T, Morrison F D, Midgley P A 2007 Phys. Rev. B 75 245111-1
[9] [10] Zheng F G, Chen J P, Li X W 2006 Acta Phys. Sin. 55 3069 (in Chinese) [郑分刚, 陈建平, 李新婉 2006 物理学报 55 3069]
[11] [12] Erbil A, Kim Y, Gerhardt R A 1996 Phys. Rev. Lett. 77 1629
[13] [14] [15] Tabata H, Tanka H, Kawai T 1994 Appl. Phys. Lett. 65 1971
[16] Zheng F G, Chen J P, Li X W, Shen M R 2006 Mater. Lett. 60 2735
[17] [18] Shen J, Zhou J, Lei Q, Ou G, Chen W 2010 J. Chin. Ceram. Soc. 38 10 (in Chinese) [沈杰, 周静, 雷琼, 欧刚, 陈文 2010 硅酸盐学报 38 10]
[19] [20] [21] Dube D C, Baborowski J, Muralt P, Setter N 1999 Appl. Phys. Lett. 74 3547
[22] Zhu J, Zhou J, Xu L S, Shen J, Yang X Y, Chen W 2008 Synth. React. Inorg. M. 38 168
[23] [24] Wang S Q, Ye H Q 2006 Curr. Opin. Solid State Mater. Sci. 10 27
[25] [26] Yoon S O, Kim D M, Shim S H, Park J K, Kang K S 2006 J. Eur. Ceram. Soc. 26 2025
[27] [28] [29] Chen Y S 2005 Physics (1st Ed.) (Tianjin: Tianjin University Press) pp337339 (in Chinese) [陈宜生 2005 物理学 (第一版) (天津: 天津大学出版社) 第337---339页]
[30] [31] Stengel M, Spaldin N A 2006 Nature 443 679
[32] Campbell D S, Hayes J A 1994 Capacitive and Resistive Elec-tronic Components (Gordon and Breach, Yverdon) p122
[33] [34] Cheng L H, Zheng L Y, Li G R, Zeng J T, Yin Q G 2008 Physica B 403 2588
[35] -
[1] Kanno I, Hayashi S, Takayama R, Hirao T 1996 Appl. Phys. Lett. 68 328
[2] [3] Zhou J P, He H C, Shi Z, Nan C W 2006 Appl. Phys. Lett. 88 013111-1
[4] Qu B D, Evstigneev M, Johnson D J, Prince R H 1998 Appl. Phys. Lett. 72 1394
[5] [6] ONeill D, Bowman R M, Gregg J M 2000 Appl. Phys. Lett. 77 1520
[7] [8] Schmidt R, Eerenstein W, Winiecki T, Morrison F D, Midgley P A 2007 Phys. Rev. B 75 245111-1
[9] [10] Zheng F G, Chen J P, Li X W 2006 Acta Phys. Sin. 55 3069 (in Chinese) [郑分刚, 陈建平, 李新婉 2006 物理学报 55 3069]
[11] [12] Erbil A, Kim Y, Gerhardt R A 1996 Phys. Rev. Lett. 77 1629
[13] [14] [15] Tabata H, Tanka H, Kawai T 1994 Appl. Phys. Lett. 65 1971
[16] Zheng F G, Chen J P, Li X W, Shen M R 2006 Mater. Lett. 60 2735
[17] [18] Shen J, Zhou J, Lei Q, Ou G, Chen W 2010 J. Chin. Ceram. Soc. 38 10 (in Chinese) [沈杰, 周静, 雷琼, 欧刚, 陈文 2010 硅酸盐学报 38 10]
[19] [20] [21] Dube D C, Baborowski J, Muralt P, Setter N 1999 Appl. Phys. Lett. 74 3547
[22] Zhu J, Zhou J, Xu L S, Shen J, Yang X Y, Chen W 2008 Synth. React. Inorg. M. 38 168
[23] [24] Wang S Q, Ye H Q 2006 Curr. Opin. Solid State Mater. Sci. 10 27
[25] [26] Yoon S O, Kim D M, Shim S H, Park J K, Kang K S 2006 J. Eur. Ceram. Soc. 26 2025
[27] [28] [29] Chen Y S 2005 Physics (1st Ed.) (Tianjin: Tianjin University Press) pp337339 (in Chinese) [陈宜生 2005 物理学 (第一版) (天津: 天津大学出版社) 第337---339页]
[30] [31] Stengel M, Spaldin N A 2006 Nature 443 679
[32] Campbell D S, Hayes J A 1994 Capacitive and Resistive Elec-tronic Components (Gordon and Breach, Yverdon) p122
[33] [34] Cheng L H, Zheng L Y, Li G R, Zeng J T, Yin Q G 2008 Physica B 403 2588
[35]
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