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提出采用圆形电子注和双排矩形梳状慢波结构作为W波段宽频带行波管注波互作用回路. 对该慢波回路的"冷"态特性、输入输出结构等方面进行了模拟仿真和分析, 研究结果表明, 该结构色散特性较好, 带宽较宽; 通过调整双排矩形梳状慢波结构之间的距离和电子注通道半径的尺寸, 圆形电子注系统取得了和带状注系统相同的耦合阻抗; 且该结构传输特性较好, 优化后整管的驻波比能在较宽的频带内保持在2以下. 此外, 对该慢波系统的大信号理论计算和PIC粒子模拟结果一致. 在50 mW驱动功率下, 输出功率在10 GHz带宽内大于40 W, 增益高于29 dB.
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关键词:
- 双排矩形梳状慢波结构 /
- W 波段 /
- 宽频带 /
- 行波管
[1] Gerum W, Lippert G, Malzahn P 2001 IEEE Trans. Electron Devices 48 72
[2] Liao F J 2003 Acta Electronica Sin. 31 1361 (in Chinese) [廖复疆 2003 电子学报 31 1361]
[3] Linde G J, Ngo M T, Danly B G 2008 IEEE Transactions on Aerospace and Electronic Systems 44 1102
[4] Liang D W 1999 Telecommunication Engineering 6 93 (in Chinese) [梁德文 1999 电讯技术 6 93]
[5] Kory C L, Read M E, Ives R L 2009 IEEE Trans. Electron Devices 56 713
[6] Theiss A J, Meadows C L, Freeman R 2010 IEEE Trans. Plasma Sci. 38 1239
[7] Gao P, Booske J H, Yang Z H 2010 Acta Phys. Sin. 59 8484 ( in Chinese) [高鹏, Booske J H, 杨中海 2010 物理学报 59 8484]
[8] Lu Z G, Wei Y Y, Gong Y B 2007 Acta Phys. Sin. 56 3318 (in Chinese) [路志刚, 魏彦玉, 宫玉彬 2007 物理学报 56 3318]
[9] Kory C, Ives L, Read M 2005 13th Int. Conf.Terahertz Electron, Williamsburg, pp.85---86
[10] Sengele S, Jiang H, Booske J H 2009 IEEE Trans. Electron Devices 56 730
[11] Ives R L 2004 IEEE Trans. Plasma Sci. 32 1277
[12] Smirnova E I, Carlsten B E, Earley L M 2008 IEEE Trans. Plasma Sci. 36 763
[13] Feng J J, Hu Y F, Cai J 2010 IEEE International Vacuum Electronics Conference California, USA, pp.501---502
[14] Wang Z C, Lu D J, Wang L 2008 Journal of Electronics and Information Technology 30 2792 (in Chinese) [王自成, 陆德坚, 王莉 2008 电子与信息学报 30 2792]
[15] Zhu Y P 1997 Radar and Ecm 4 16 (in Chinese) [朱乙平 1997 雷达与对抗 4 16]
[16] Shin Y M, Barnett L R, Gamzina D 2009 Appl. Phys. Lett. 95 181505
[17] Shin Y M, Barnett L R, Luhmann N C 2008 Appl. Phys. Lett. 93 221504
[18] Shin Y M, Barnett L R, Luhmann N C 2009 IEEE Trans. Electron Devices 56 706
[19] Shin Y M, Barnett L R 2008 Appl. Phys. Lett. 92 091501
[20] Tang T, Gong H R, Gong Y B 2010 High Power Laser and Particle Beam 5 1103 (in Chinese) [唐涛, 巩华荣, 宫玉斌 2010 强激光与粒子束 5 1103]
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[1] Gerum W, Lippert G, Malzahn P 2001 IEEE Trans. Electron Devices 48 72
[2] Liao F J 2003 Acta Electronica Sin. 31 1361 (in Chinese) [廖复疆 2003 电子学报 31 1361]
[3] Linde G J, Ngo M T, Danly B G 2008 IEEE Transactions on Aerospace and Electronic Systems 44 1102
[4] Liang D W 1999 Telecommunication Engineering 6 93 (in Chinese) [梁德文 1999 电讯技术 6 93]
[5] Kory C L, Read M E, Ives R L 2009 IEEE Trans. Electron Devices 56 713
[6] Theiss A J, Meadows C L, Freeman R 2010 IEEE Trans. Plasma Sci. 38 1239
[7] Gao P, Booske J H, Yang Z H 2010 Acta Phys. Sin. 59 8484 ( in Chinese) [高鹏, Booske J H, 杨中海 2010 物理学报 59 8484]
[8] Lu Z G, Wei Y Y, Gong Y B 2007 Acta Phys. Sin. 56 3318 (in Chinese) [路志刚, 魏彦玉, 宫玉彬 2007 物理学报 56 3318]
[9] Kory C, Ives L, Read M 2005 13th Int. Conf.Terahertz Electron, Williamsburg, pp.85---86
[10] Sengele S, Jiang H, Booske J H 2009 IEEE Trans. Electron Devices 56 730
[11] Ives R L 2004 IEEE Trans. Plasma Sci. 32 1277
[12] Smirnova E I, Carlsten B E, Earley L M 2008 IEEE Trans. Plasma Sci. 36 763
[13] Feng J J, Hu Y F, Cai J 2010 IEEE International Vacuum Electronics Conference California, USA, pp.501---502
[14] Wang Z C, Lu D J, Wang L 2008 Journal of Electronics and Information Technology 30 2792 (in Chinese) [王自成, 陆德坚, 王莉 2008 电子与信息学报 30 2792]
[15] Zhu Y P 1997 Radar and Ecm 4 16 (in Chinese) [朱乙平 1997 雷达与对抗 4 16]
[16] Shin Y M, Barnett L R, Gamzina D 2009 Appl. Phys. Lett. 95 181505
[17] Shin Y M, Barnett L R, Luhmann N C 2008 Appl. Phys. Lett. 93 221504
[18] Shin Y M, Barnett L R, Luhmann N C 2009 IEEE Trans. Electron Devices 56 706
[19] Shin Y M, Barnett L R 2008 Appl. Phys. Lett. 92 091501
[20] Tang T, Gong H R, Gong Y B 2010 High Power Laser and Particle Beam 5 1103 (in Chinese) [唐涛, 巩华荣, 宫玉斌 2010 强激光与粒子束 5 1103]
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