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二硫化钼(MoS2)是已知的二维半导体材料中光电性能最优秀的材料之一. 单原子层厚的MoS2是禁带宽度为1.8 eV 的二维直接带隙半导体材料, 可以用来发展新型的纳米电子器件和光电功能器件. 本论文利用玻尔兹曼平衡方程输运理论研究低温时MoS2系统的电输运性质, 计算得到了MoS2电子迁移率的解析表达式. 研究发现, 低温时MoS2 的迁移率与衬底材料的介电常数的平方成正比; 与系统的电子浓度对带电杂质的浓度的比率ne/ni 成线性关系. 因此, 选用介电常数高的衬底材料, 适当提高MoS2系统的载流子浓度, 同时降低杂质的浓度, 可以有效提高MoS2系统的迁移率. 研究结果为探索以MoS2为基础的新型纳米光电器件的研究和实际应用提供了理论依据.The two-dimensional, single-layer MoS2 with a direct band-gap of 1.8 eV, which makes it very suitable for nanoelectronic applications, such as field-effect transistors, has aroused great interest because of its distinctive electronic, optical, and catalytic properties. In this paper, we present a detailed theoretical study of the electronic transport property of single-layer MoS2 on the basis of the usual momentum-balance equation. We obtain the analytical electric mobility at low temperature. It shows that the electric mobility of MoS2 is linear with respect to substrate dielectric constant squared and the rate between the electron density and charged impurity density at low temperature. It is found that by using relatively high dielectric constant materials as substrates, reducing impurity densities and increasing carrier densities high mobilities in MoS2-substrate wafer systems can be achieved.
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Keywords:
- MoS2 /
- mobility /
- electronic transport /
- balance-equation
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[15] Mahan G D 2000 Many-Particle Physics (New York: Kluwer Academic/Plenum Publishers) p325
[16] Zhang X L, Hayward D O, Mingos D M 2002 Catalysis Lett. 84 225
[17] Hwang E H, Adam S, Sarma S D 2007 Phys. Rev. Lett. 98 186806
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[1] Castro Neto A H, Novoselov K 2011 Rep. Prog. Phys. 74 082501
[2] Liu W L, Chen C, Shen Q W 2008 Chin. Phys. Lett. 25 227
[3] Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nature Nanotechnol. 6 147
[4] Wang H, Yu L L, Lee Y H 2012 Nano Lett. 12 4674
[5] Kim S, Konar A, Hwang W S Lee J H, Lee J Y, Yang J Y, Jung C H, Kim H S, Yoo J B, Choi J Y, Jin Y W, Lee S Y, Jena D D, Choi W, Kim K 2012 Nature Commun. 3 1011
[6] Mak K F, C Lee H G, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805
[7] Yin Z Y, Li H, Li H, Jiang L, Shi Y M, Sun Y H, Lu G, Zhang Q, Chen X D, Zhang H 2012 ACS Nano 6 74
[8] Alam K, Lake R K 2012 IEEE Trans. Electron DEC. 59 3250
[9] Wang Q H, Kourosh K Z, Kis A, Coleman J N, Strano M S 2012 Nature Nanotechnol. 7 699
[10] Lee H S, Min S W, Chang Y G, Park M K, Nam T W, Kim H, Kim J H, Ryu S M, Im S 2012 Nano Lett. 12 3695
[11] Yang H J, Heo J S, Park S J, Song H J, Seo D H 2012 Science 336 1140
[12] Wu M S, Xu B, Liu G, Ouyang C Y 2012 Acta Phys. Sin. 61 227102 (in Chinese) [吴木生, 徐波, 刘刚, 欧阳楚英 2012 物理学报 61 227102]
[13] Ye L X 2007 Semiconductor Physics (Vol. 1) (BeiJing: Higher Education Press) (in Chinese) [叶良修 2007 半导体物理学 (上卷) (北京高等教育出版社)]
[14] Lei X L, Ting C S 1985 J. Phys. C 18 77
[15] Mahan G D 2000 Many-Particle Physics (New York: Kluwer Academic/Plenum Publishers) p325
[16] Zhang X L, Hayward D O, Mingos D M 2002 Catalysis Lett. 84 225
[17] Hwang E H, Adam S, Sarma S D 2007 Phys. Rev. Lett. 98 186806
[18] Novoselov K S, Geim A K, Morozov S V, Zhang D Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[19] Zhang J F, Yue H, Zhang J C, Ni J Y 2008 Sci. China F 51 780
[20] Ando T 1982 Rev. Mod. Phys. 54 437
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