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Au诱导形成有序Si纳米孔阵列及其应用

王海澎 柯少颖 杨杰 王茺 杨宇

Au诱导形成有序Si纳米孔阵列及其应用

王海澎, 柯少颖, 杨杰, 王茺, 杨宇
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  • 以自组装聚苯乙烯小球(PS)单层膜为掩膜,利用Au对Si表面的催化氧化作用以及KOH溶液对单晶Si的各向异性腐蚀特性,在Si(100)面上制备了一系列尺寸小于100 nm有序可控的Si纳米孔阵列. 扫描电镜(SEM)和原子力显微镜(AFM)等的测试结果显示:当PS小球溶液与甲醇溶液的体积比为9:11时,可形成大面积无缺陷的单层膜;但当体积比过大时,会导致类似双层膜结构的形成;而当体积比过小时,会诱导形成点缺陷和线缺陷. 对PS小球及溅射Au处理过的Si晶片进行KOH溶液腐蚀,随着腐蚀时间变长,纳米孔的横向尺寸和深度增大,其形貌由圆形逐渐变为倒金字塔型,当腐蚀时间超过10 min,纳米孔阵列的有序性遭到破坏. 采用离子束溅射技术在倒金字塔型纳米孔衬底上获得了有序Ge/Si纳米岛,而在圆形纳米孔衬底上获得了有序Ge/Si纳米环. 进一步对有序Ge/Si纳米岛及纳米环的形成机理进行了解释.
    • 基金项目: 国家自然科学基金(批准号:11274266)、国家重点基础研究发展计划(973)项目(批准号:2012CB326401)、云南省应用基础研究计划重点项目(批准号:2013FA029)和云南大学理工项目基金(批准号:2013CG024)资助的课题.
    [1]

    Chou S Y, Wei M S, Krauss P R, Fischer P B 1994 J. Appl. Phys. 76 6673

    [2]

    Shwn Y Z, Christopher S F, Jiang Y, Jakubczyk D, Swiatkiewicz J, Prasad P N 2000 J. Phys. Chem. B 104 7577

    [3]

    Wang H Y, Xu X S 2013 Chin. Phys. B 22 054205

    [4]

    Yang S k, Xu F, Ostendorp S, Wilde G, Zhao H P, Lei Y 2011 Adv. Funct. Mater. 21 2446

    [5]

    Chen Z X, Ren Y, Xiao G H, Li J T, Chen X, Wang X H, Jin C J, Zhang B J 2014 Chin. Phys. B 23 018502

    [6]

    Sun P, Xu L, Zhao W M, Li W, Xu J, Ma Z Y, Wu L C, Huang X F, Chen K J 2008 Acta Phys. Sin. 57 1951 (in Chinese)[孙萍, 徐岭, 赵伟明, 李卫, 徐骏, 马忠元, 吴良才, 黄信凡, 陈坤基 2008 物理学报 57 1951]

    [7]

    Chen L M, Li P G, Fu X L, Zhang H Y, Li H L, Tang W H 2005 Acta Phys. Sin. 54 0582 (in Chinese) [陈雷明, 李培刚, 符秀丽, 张海英, L. H. Li, 唐为华 2005 物理学报 54 0582]

    [8]

    Awad Y, Lavallee E, Lau K M, Beauvais J, Drouin D, Cloutier M, Turcotte D, Yang P, Kelkar P 2004 J. Vac. Sci. Technol. A 22 1040

    [9]

    Hamouda F, Barbillon G, Held S, Agnus G, Gogol P, Maroutian T, Scheuring S, Bartenlian B 2009 Microelectron. Eng. 86 583

    [10]

    Brambley D, Martin B,, Prewett P D 1994 Adv. Mater. Opt. Elec-tron. 4 55

    [11]

    Lan H B, Ding Y C 2012 Nano Today. 7 94

    [12]

    Martin O J F 2003 Microelectron. Eng. 24 67

    [13]

    Yang M F, Yu H Y, Sun X W, Li J S, Li X C, Ke L, Hu J H, Wang F, Jiao Z H 2011 Solid State Communications 151 127

    [14]

    Xiang Y J, Liu D F, Zhang Z X, Song L, Zhao X W, Liu L F, Luo S D, Ma W J Shen J, Zhou W Y, Zhou J J, Wang C Y, Wang G, Wu X C 2006 Chin. Phys. B 15 2080

    [15]

    Cheng S L, Lin Y H, Lee S W, Lee T, Chen H, Hu J C, Chen L T 2012 Appl. Surf. Sci. 263 430

    [16]

    Chen X, Liang Z H, Chen Z X, Yang W M, Chen T F, Jin C J, Zhang B J 2013 Chin. Phys. B 22 048101

    [17]

    Park K H, Lee S, Koh H K, Lacerda R, Teo K B K, Milne W I 2005 J. Appl. Phys. 97 024311

    [18]

    Sakamoto S, Philippe L, Bechelany M, Michler J, Asoh H, Ono S 2008 Nanotechnology 19 405304

    [19]

    Cheung C L, Nikolic R J, Reinhardt C E, Wang T F 2006 Nanotechnology 17 1339

    [20]

    Ma Y J, Cui J, Fan Y L, Zhong Z Y, Jiang Z M 2011 Nanoscale Research Letters 6 205

    [21]

    Fuhrmann B, Leipner H S, Hoche H R, Schubert L, Werner P, Gosele U 2005 Nano Letters 5 2524

    [22]

    Ma Y J, Zhong Z Y, Yang X J, Fan Y L, Jiang Z M 2013 Nanotechnology 24 015304

    [23]

    Weekes S M, Ogrin F Y, Murray W A, Keatley P S 2007 Langmuir. 23 1057

    [24]

    Eidelloth W, Sandstorm R L 1991 Appl. Phys. Lett. 59 1632

    [25]

    Lu Z C, Zhou M 2011 Journal of Colloid and Interface Science 361 429

    [26]

    Stavroulakis P I, Christou N, Bagnall D 2009 Mater. Sci. Eng. B 165 186

    [27]

    Lindroos V, Tilli M, Lehto A, Motooka T 2010 Handbook of silicon based MEMS materials and technologies (Burlington: William Andrew) pp375-407

    [28]

    Yun M 2000 Journal-Korean Physical Society. 37 605

    [29]

    Shikida M, Sato K, Tokoro K, Uchikawa D 2000 Sens. Actuator A 80 179

    [30]

    Seidel H, Csepregi L, Heuberger A, Baumgartel H 1990 J. Electrochem. Soc. 137 3612

    [31]

    Hollinger G, Himpsel F J 1984 Appl. Phys. Lett. 44 93

    [32]

    Sundaravel B, Sekar K, Kuri G, Satyam P V, Dev B N, Bera Santanu, Narasimhan S V, Chakraborty P, Caccavale F 1999 Appl. Surf. Sci. 137 103

    [33]

    Lu Z H, Sham T K, Norton P R 1993 Solid State Commun. 85 957

    [34]

    Hiraki A, Nicolet M A, Mayer J W 1971 Appl. Phys. Lett. 18 178

    [35]

    Cros A, Derrien J, Salvan F 1981 Surf. Sci. 110 471

    [36]

    Robinson J T, Ratto F, Moutanabbir O, Heun S, Locatelli A, Mentes T O, Aballe L, Dubon O D 2007 Nano Lett. 7 2655

    [37]

    Tu K N, Mayer J W, Feldman L C(translated by Huang X F, Du J F, Chen K J)1997 Electronic Thin Film Sciences (Beijing: Science Press) pp113–114 (in Chinese) [杜经宁, 迈耶J W, 费尔德曼L C著 (黄信凡, 杜家方, 陈坤基译) 1997 电子薄膜科学 (北京: 科学出版社) 第113第–114页]

    [38]

    Zhang Y J, Wang X H, Wang Y X, Liu H L, Yang J H 2008 Journal of Alloys and Compounds 452 473

    [39]

    Schulli T U, Vastola G, Richard M I, Malachias A, Renaud G, Uhlık F, Montalenti F, Chen G, Miglio L, Schaffler F, Bauer G 2009 Phys. Rev. Lett. 102 025502

    [40]

    Katsaros G, Tersoff J, Stoffel M, Rastelli A, Acosta-Diaz P, Kar G S, Costantini G, Schmidt O G, Kern K 2008 Phys. Rev. Lett. 101 096103

    [41]

    Gruetzmacher D, Fromherz T, Dais C, Stangl J, Mueller E, Ekinci Y, Solak H H, Sigg H, Lechner T R, Wintersberger E, Bimer S, Holy V, Bauer G 2007 Nano Lett. 7 3150

    [42]

    Zhong Z Y, Chen P X, Jiang Z M, Bauer G 2008 Appl. Phys. Lett. 93 043106

  • [1]

    Chou S Y, Wei M S, Krauss P R, Fischer P B 1994 J. Appl. Phys. 76 6673

    [2]

    Shwn Y Z, Christopher S F, Jiang Y, Jakubczyk D, Swiatkiewicz J, Prasad P N 2000 J. Phys. Chem. B 104 7577

    [3]

    Wang H Y, Xu X S 2013 Chin. Phys. B 22 054205

    [4]

    Yang S k, Xu F, Ostendorp S, Wilde G, Zhao H P, Lei Y 2011 Adv. Funct. Mater. 21 2446

    [5]

    Chen Z X, Ren Y, Xiao G H, Li J T, Chen X, Wang X H, Jin C J, Zhang B J 2014 Chin. Phys. B 23 018502

    [6]

    Sun P, Xu L, Zhao W M, Li W, Xu J, Ma Z Y, Wu L C, Huang X F, Chen K J 2008 Acta Phys. Sin. 57 1951 (in Chinese)[孙萍, 徐岭, 赵伟明, 李卫, 徐骏, 马忠元, 吴良才, 黄信凡, 陈坤基 2008 物理学报 57 1951]

    [7]

    Chen L M, Li P G, Fu X L, Zhang H Y, Li H L, Tang W H 2005 Acta Phys. Sin. 54 0582 (in Chinese) [陈雷明, 李培刚, 符秀丽, 张海英, L. H. Li, 唐为华 2005 物理学报 54 0582]

    [8]

    Awad Y, Lavallee E, Lau K M, Beauvais J, Drouin D, Cloutier M, Turcotte D, Yang P, Kelkar P 2004 J. Vac. Sci. Technol. A 22 1040

    [9]

    Hamouda F, Barbillon G, Held S, Agnus G, Gogol P, Maroutian T, Scheuring S, Bartenlian B 2009 Microelectron. Eng. 86 583

    [10]

    Brambley D, Martin B,, Prewett P D 1994 Adv. Mater. Opt. Elec-tron. 4 55

    [11]

    Lan H B, Ding Y C 2012 Nano Today. 7 94

    [12]

    Martin O J F 2003 Microelectron. Eng. 24 67

    [13]

    Yang M F, Yu H Y, Sun X W, Li J S, Li X C, Ke L, Hu J H, Wang F, Jiao Z H 2011 Solid State Communications 151 127

    [14]

    Xiang Y J, Liu D F, Zhang Z X, Song L, Zhao X W, Liu L F, Luo S D, Ma W J Shen J, Zhou W Y, Zhou J J, Wang C Y, Wang G, Wu X C 2006 Chin. Phys. B 15 2080

    [15]

    Cheng S L, Lin Y H, Lee S W, Lee T, Chen H, Hu J C, Chen L T 2012 Appl. Surf. Sci. 263 430

    [16]

    Chen X, Liang Z H, Chen Z X, Yang W M, Chen T F, Jin C J, Zhang B J 2013 Chin. Phys. B 22 048101

    [17]

    Park K H, Lee S, Koh H K, Lacerda R, Teo K B K, Milne W I 2005 J. Appl. Phys. 97 024311

    [18]

    Sakamoto S, Philippe L, Bechelany M, Michler J, Asoh H, Ono S 2008 Nanotechnology 19 405304

    [19]

    Cheung C L, Nikolic R J, Reinhardt C E, Wang T F 2006 Nanotechnology 17 1339

    [20]

    Ma Y J, Cui J, Fan Y L, Zhong Z Y, Jiang Z M 2011 Nanoscale Research Letters 6 205

    [21]

    Fuhrmann B, Leipner H S, Hoche H R, Schubert L, Werner P, Gosele U 2005 Nano Letters 5 2524

    [22]

    Ma Y J, Zhong Z Y, Yang X J, Fan Y L, Jiang Z M 2013 Nanotechnology 24 015304

    [23]

    Weekes S M, Ogrin F Y, Murray W A, Keatley P S 2007 Langmuir. 23 1057

    [24]

    Eidelloth W, Sandstorm R L 1991 Appl. Phys. Lett. 59 1632

    [25]

    Lu Z C, Zhou M 2011 Journal of Colloid and Interface Science 361 429

    [26]

    Stavroulakis P I, Christou N, Bagnall D 2009 Mater. Sci. Eng. B 165 186

    [27]

    Lindroos V, Tilli M, Lehto A, Motooka T 2010 Handbook of silicon based MEMS materials and technologies (Burlington: William Andrew) pp375-407

    [28]

    Yun M 2000 Journal-Korean Physical Society. 37 605

    [29]

    Shikida M, Sato K, Tokoro K, Uchikawa D 2000 Sens. Actuator A 80 179

    [30]

    Seidel H, Csepregi L, Heuberger A, Baumgartel H 1990 J. Electrochem. Soc. 137 3612

    [31]

    Hollinger G, Himpsel F J 1984 Appl. Phys. Lett. 44 93

    [32]

    Sundaravel B, Sekar K, Kuri G, Satyam P V, Dev B N, Bera Santanu, Narasimhan S V, Chakraborty P, Caccavale F 1999 Appl. Surf. Sci. 137 103

    [33]

    Lu Z H, Sham T K, Norton P R 1993 Solid State Commun. 85 957

    [34]

    Hiraki A, Nicolet M A, Mayer J W 1971 Appl. Phys. Lett. 18 178

    [35]

    Cros A, Derrien J, Salvan F 1981 Surf. Sci. 110 471

    [36]

    Robinson J T, Ratto F, Moutanabbir O, Heun S, Locatelli A, Mentes T O, Aballe L, Dubon O D 2007 Nano Lett. 7 2655

    [37]

    Tu K N, Mayer J W, Feldman L C(translated by Huang X F, Du J F, Chen K J)1997 Electronic Thin Film Sciences (Beijing: Science Press) pp113–114 (in Chinese) [杜经宁, 迈耶J W, 费尔德曼L C著 (黄信凡, 杜家方, 陈坤基译) 1997 电子薄膜科学 (北京: 科学出版社) 第113第–114页]

    [38]

    Zhang Y J, Wang X H, Wang Y X, Liu H L, Yang J H 2008 Journal of Alloys and Compounds 452 473

    [39]

    Schulli T U, Vastola G, Richard M I, Malachias A, Renaud G, Uhlık F, Montalenti F, Chen G, Miglio L, Schaffler F, Bauer G 2009 Phys. Rev. Lett. 102 025502

    [40]

    Katsaros G, Tersoff J, Stoffel M, Rastelli A, Acosta-Diaz P, Kar G S, Costantini G, Schmidt O G, Kern K 2008 Phys. Rev. Lett. 101 096103

    [41]

    Gruetzmacher D, Fromherz T, Dais C, Stangl J, Mueller E, Ekinci Y, Solak H H, Sigg H, Lechner T R, Wintersberger E, Bimer S, Holy V, Bauer G 2007 Nano Lett. 7 3150

    [42]

    Zhong Z Y, Chen P X, Jiang Z M, Bauer G 2008 Appl. Phys. Lett. 93 043106

  • 引用本文:
    Citation:
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  • 收稿日期:  2013-11-21
  • 修回日期:  2014-01-20
  • 刊出日期:  2014-05-05

Au诱导形成有序Si纳米孔阵列及其应用

  • 1. 云南大学光电信息材料研究所, 昆明 650091
    基金项目: 

    国家自然科学基金(批准号:11274266)、国家重点基础研究发展计划(973)项目(批准号:2012CB326401)、云南省应用基础研究计划重点项目(批准号:2013FA029)和云南大学理工项目基金(批准号:2013CG024)资助的课题.

摘要: 以自组装聚苯乙烯小球(PS)单层膜为掩膜,利用Au对Si表面的催化氧化作用以及KOH溶液对单晶Si的各向异性腐蚀特性,在Si(100)面上制备了一系列尺寸小于100 nm有序可控的Si纳米孔阵列. 扫描电镜(SEM)和原子力显微镜(AFM)等的测试结果显示:当PS小球溶液与甲醇溶液的体积比为9:11时,可形成大面积无缺陷的单层膜;但当体积比过大时,会导致类似双层膜结构的形成;而当体积比过小时,会诱导形成点缺陷和线缺陷. 对PS小球及溅射Au处理过的Si晶片进行KOH溶液腐蚀,随着腐蚀时间变长,纳米孔的横向尺寸和深度增大,其形貌由圆形逐渐变为倒金字塔型,当腐蚀时间超过10 min,纳米孔阵列的有序性遭到破坏. 采用离子束溅射技术在倒金字塔型纳米孔衬底上获得了有序Ge/Si纳米岛,而在圆形纳米孔衬底上获得了有序Ge/Si纳米环. 进一步对有序Ge/Si纳米岛及纳米环的形成机理进行了解释.

English Abstract

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