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摘要: 本文用Monte Carlo模拟计算了孤立薄膜和同一材料厚样中同样厚度表层的X射线强度分布函数,然后提出一简单关系式确定有衬底薄膜的X射线出射强度,以校正膜厚测定中Z.A.P.影响,使膜厚测定的准确度比前人有所提高。对GaAS,Si衬底上的Ta2O5膜、ZrO2膜的测厚结果与椭圆术测定结果一致。
Abstract: Monte Carlo method has been used to evaluate the X-ray intensity distribution funetion in freestanding thin films and in surface layer of same thickness of the same material. A simple equation of the X-ray emitting intensity from a thin film on substrate has been proposed to correct the influence of Z. A. P. on the determination of film thickness. The accuracy of the present measurement is higher than that of methods previously. developed. Experimental results are presented for Ta2O5 film on GaAs and for ZrO2 on Si. They are in agreement with those obtained by ellipsometry.