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物理学报. 1985, 34(3): 332-340.
doi: 10.7498/aps.34.332.
GaAs及其它半导体欧姆接触模型
- 收稿日期: 1984-01-06
- 刊出日期: 2005-03-28
摘要: n型GaAs欧姆接触的比接触电阻ρc与有源层浓度ND有反比关系,这已为很多实验事实所证明。文献中对这一现象有各种解释。本文对文献中的各种解释模型进行了分析,指出不足之处。提出ρc应由两部分ρ(c1)和ρ(c2)组成。ρ(c1)是合金与其下在合金化后形成的高掺杂层间的比接触电阻。此外,在这高掺杂层与原来有源层间有
English Abstract
A MODEL OF OHMIC CONTACT OF GaAs AND OTHER SEMICONDUCTOR
- Received Date:
06 January 1984
- Published Online:
28 March 2005
Abstract: An inverse proportionality between the specific contact resistance ρc of n-type GaAs and its carrier concentration ND has been shown by a lot of experimental facts. In this paper, a comment is made on the various viewpoints about this phenomenon in the literatures and their shortages are pointed out as well. According to the band structure of ohmic contact, a new model, assuming that ρc consists of two parts (ρ(c1) and ρ(c2)), is put forward. ρ(c1) occurs between the contact metal and its underlying highly doped semiconductor layer (NDc) after alloying. ρc2 is brought about by a barrier appeared due to the concentration difference between the NDc and the active layer ND. If the alloying process is optimized and thus the NDc is very high, then ρ(c1) is very small and ρ(c2) gives the main contribution to ρc. In this case an inverse proportionality between ρc and NDcan be found, if NDc (Nc is the effective state density). When ND> Nc, ρ(c2) can be neglected due to the disappearance of the barrier. In this case, ρc is determined by ρc1, which should depend only on NDc. Based on the above description, a theoretical deduction was carried out and the result not only can explain the experimental data of n-type GaAs ohmic contact very well, but also the experimental facts of p-type Si ohmic contact presented in the literatures. We believe that this model can also be extended to the case of other III-V compound semiconductors, such as p-type GaAs and P-type InP etc.
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