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CaCu3Ti4O12介电损耗较大且损耗机理尚不明确, 因此限制了其应用.本文采用固相法和共沉淀法合成CaCu3Ti4O12陶瓷, 利用宽带介电温谱研究在交流小信号作用下, 双Schottky势垒耗尽层边缘深陷阱的电子松弛过程、 载流子松弛过程以及CaCu3Ti4O12陶瓷的介电损耗性能. 研究发现, 在低频下以跳跃电导和直流电导的响应为主, 而高频下主要为深陷阱能级的松弛过程所致, 特别是活化能为0.12 eV的深陷阱浓度, 这是决定CaCu3Ti4O12陶瓷高频区介电损耗的重要因素.降低直流电导, 有利于降低低频区介电损耗; 而高频区介电损耗的降低, 需要降低深陷阱浓度或增大晶粒尺寸. 共沉淀法制备的CaCu3Ti4O12陶瓷, 有效降低直流电导及控制深陷阱浓度, 介电损耗降低明显.
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关键词:
- CaCu3Ti4O12陶瓷 /
- 介电损耗 /
- 松弛过程 /
- Schottky势垒
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[23] He L, Neaton J B, Vanderbilt D, Cohen M H 2003 Phys. Rev. B 67 012103
[24] Chen L, Wang C L 2007 J. Magn. Magn. Mater. 31 266
[25] Jonscher A K 2008 Dielectric Relaxation in Solids (Xi'an:Xi'an Jiaotong University Press) p161 (in Chinese) [A. K. 琼克 2008固体中的介电弛豫(西安:西安交通大学出版社)第161页]
[26] Yang Y, Li S T 2009 Acta Phys. Sin. 58 6376 (in Chinese) [杨雁, 李盛涛 2009 物理学报 58 6376]
[27] Jonscher A K 1975 Nature 256 566
[28] Marchin L, Guillemet F S, Durand B, Levchenko A, Navrotsky A, Lebey T 2008 J. Am. Ceram. Soc. 91 485
-
[1] Subramanian M A, Li D, Duan N, Reisner B A, Sleight A W 2000 J. Solid State Chem. 151 323
[2] Home C C, Vogt T, Shapiro S M, Wakimoto S, Ramirez A P 2001 Science 293 673
[3] Sinclair D C, Adams T B, Morrison F D, West A R 2002 Appl. Phys. Lett. 80 2153
[4] Adams T B, Sinelair D C, West A R 2002 Adv. Mater. 14 1321
[5] Patterson E A, Kwon S, Huang C C, Cann D P 2005 Appl. Phys. Lett. 87 182911
[6] Choi S W, Hong S H, Kim Y M 2007 J. Am. Ceram. Soc. 90 4009
[7] Shao S F, Zhang J L, Zheng P, Wang C L, Li J C, Zhao M L 2007 Appl. Phys. Lett. 91 042905
[8] Mu CH, Liu P, He Y, Zhou J P, Zhang H W 2009 J. Alloys Compd. 471 137
[9] Guillemet F S, Lebey T, Boulos M, Durand B 2006 J. Eur. Ceram. Soc. 26 1245
[10] Marchin L, Guillemet F S, Durand B 2008 Prog. Solid State Chem. 36 151
[11] Cheng B, Lin Y H, Yuan J, Cai J, Nan C W, Xiao X, He J 2009 J. Appl. Phys. 106 034111
[12] Marco A L C, Flavio L S, Edson R L, Alexandre J C L 2008 Appl. Phys. Lett. 93 182912
[13] Adams T B, Sinclair D C, West A R 2006 Phys. Rev. B 73 094124
[14] Lin Y H, Cai J, Li M, Nan C W, He J 2006 Appl. Phys. Lett. 88 172902
[15] Chen K, Li G L, Gao F, Liu J, Liu J M, Zhu J S 2007 J. Appl. Phys. 101 074101
[16] Deng G, Yamada T, Muralt P 2007 Appl. Phys. Lett. 91 202903
[17] Li M, Feteira A, Sinclair D C, West A R 2006 Appl. Phys. Lett. 88 232903
[18] Yang Y, Li S T 2010 J. Inorg. Mater. 25 835 (in Chinese) [杨雁, 李盛涛 2010无机材料学报 25 835]
[19] Li J Y, Zhao X T, Li S T, Mohammad A 2010 J. Appl. Phys. 108 104104
[20] Chung S, Kim I, Kang S 2004 Nat. Mater. 3 774
[21] Kant C, Rudolf T, Mayr F, Krohns S, Lunkenheimer P, Ebbinghaus S G, Loidl A 2008 Phys. Rev. B 77 045131
[22] He L, Neaton J B, Cohen M H, Vanderbilt D, Homes C C 2002 Phys. Rev. B 65 214112
[23] He L, Neaton J B, Vanderbilt D, Cohen M H 2003 Phys. Rev. B 67 012103
[24] Chen L, Wang C L 2007 J. Magn. Magn. Mater. 31 266
[25] Jonscher A K 2008 Dielectric Relaxation in Solids (Xi'an:Xi'an Jiaotong University Press) p161 (in Chinese) [A. K. 琼克 2008固体中的介电弛豫(西安:西安交通大学出版社)第161页]
[26] Yang Y, Li S T 2009 Acta Phys. Sin. 58 6376 (in Chinese) [杨雁, 李盛涛 2009 物理学报 58 6376]
[27] Jonscher A K 1975 Nature 256 566
[28] Marchin L, Guillemet F S, Durand B, Levchenko A, Navrotsky A, Lebey T 2008 J. Am. Ceram. Soc. 91 485
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