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High-mobility In0.53Ga0.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass (SdH) oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.
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Keywords:
- g-factor /
- quantum well /
- magnetoresistance
[1] Chu J H 2005 Physics of Narrow Gap Semiconductors (Beijing: Science Press) p758 (in Chinese) [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社) 第758页]
[2] Datta S, Das B 1990 Appl. Phys. Lett. 56 665
[3] Bychkov Yu A, Rashba E I 1984 JETP lett. 39 78
[4] Zhu B, Gui Y S, Zhou W Z, Shang L Y, Qiu Z J, Guo S L, Zhang F J, Chu J H 2006 Acta. Phys. Sin. 55 2955 (in Chinese) [朱博, 桂永胜, 周文政, 商丽燕, 仇志军, 郭少令, 张福甲, 褚君浩 2006 物理学报 55 2955]
[5] Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H 2004 Acta. Phys. Sin. 53 1186 (in Chinese) [仇志军, 桂永胜, 疏小舟, 戴宁, 郭少令, 褚君浩 2004 物理学报 53 1186]
[6] Engels G, Lange J, Schäpers Th, Lüh H 1997 Phys. Rev. B 55 R1958
[7] Nitta J, Akazaki T, Takayanagi H, Enoki T 1997 Phys. Rev. Lett. 78 1335
[8] Das B, Miller D C, Datta S, Reifenberger R, Hong W P, Bhattacharya P K, Singh J, Jaffe M 1989 Phys. Rev. B 39 1411
[9] Zhu B, Gui Y S, Qiu Z J, Zhou W Z, Yao W, Guo S L, Chu J H, Zhang F J 2006 Acta. Phys. Sin. 55 0786 (in Chinese) [朱博, 桂永胜, 仇志军, 周文政, 姚炜, 郭少令, 褚君浩, 张福甲 2006 物理学报 55 0786]
[10] Gui Y S, Hu C M, Chen Z H, Zheng G Z, Guo S L, Chu J H, Chen J X, Li A Z 2000 Phys. Rev. B 61 7237
[11] Nitta J, Lin Y, Akazaki T, Koga T 2003 Appl. Phys. Lett. 83 4565
[12] Dobers M, Vieren J P, Guldner Y, Bove P, Omnes F, Razeghi M 1989 Phys. Rev. B 40 8075
[13] Savel'ev I G, Kreshchuk A M, Novikov S V, Shik A Y, Remenyi G, Kovács Gy, Pôdör B, Gombos G 1996 J. Phys.: Condens. Matter 8 9025
[14] Das B, Datta S, Reifenberger R 1990 Phys. Rev. B 41 8278
[15] Gao H L, Li D L, Zhou W Z, Shang L Y, Wang B Q, Zhu Z P, Zeng Y P 2007 Acta. Phys. Sin. 56 4955 (in Chinese) [高宏玲, 李东临, 周文政, 商丽燕, 王宝强, 朱战平, 曾一平 2007 物理学报 56 4955]
[16] Shang L Y, Lin T, Zhou W Z, Huang Z M, Li D L, Gao H L, Cui L J, Zeng Y P, Guo S L, Chu J H 2008 Acta. Phys. Sin. 57 2481 (in Chinese) [商丽燕, 林铁, 周文政, 黄志明, 李东临, 高宏玲, 崔利杰, 曾一平, 郭少令, 褚君浩 2008 物理学报 57 2481]
[17] Zhou Y M, Shang L Y, Yu G, Gao K H, Zhou W Z, Lin T, Guo S L, Chu J H, Dai N, Austing D G 2009 J. Appl. Phys. 106 073722
[18] Lee Patrick A, Ramakrishnan T V 1985 Rev. Mod. Phys. 57 287
[19] Coleridge P T, Stoner R, Fletcher R 1989 Phys. Rev. B 39 1120
[20] Studenikin S A, Coleridge P T, Yu G, Poole P J 2005 Semicond. Sci. Technol. 20 1103
[21] Luo J, Munekata H, Fang F F, Stiles P J 1990 Phys. Rev. B 41 7685
[22] Cavalheiro A, da Silva E C F, Takahashi E K, Quivy A A, Leite J R, Meneses E A 2002 Phys. Rev. B 65 075320
[23] Henriques A B 1994 Phys. Rev. B 50 8568
[24] Nicholas R J, Brummell M A, Portal J C, Cheng K Y, Cho A Y, Pearsall T P 1983 Solid State Commun. 45 911
[25] Perea Ernesto H, Mendez Emilio E, Fonstad Clifton G 1980 Appl. Phys. Lett. 36 978
[26] Vehse Deborah L, Hummel S G, Cox H M, DeRosa F, Allen S J, Jr. 1986 Phys. Rev. B 33 5862
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[1] Chu J H 2005 Physics of Narrow Gap Semiconductors (Beijing: Science Press) p758 (in Chinese) [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社) 第758页]
[2] Datta S, Das B 1990 Appl. Phys. Lett. 56 665
[3] Bychkov Yu A, Rashba E I 1984 JETP lett. 39 78
[4] Zhu B, Gui Y S, Zhou W Z, Shang L Y, Qiu Z J, Guo S L, Zhang F J, Chu J H 2006 Acta. Phys. Sin. 55 2955 (in Chinese) [朱博, 桂永胜, 周文政, 商丽燕, 仇志军, 郭少令, 张福甲, 褚君浩 2006 物理学报 55 2955]
[5] Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H 2004 Acta. Phys. Sin. 53 1186 (in Chinese) [仇志军, 桂永胜, 疏小舟, 戴宁, 郭少令, 褚君浩 2004 物理学报 53 1186]
[6] Engels G, Lange J, Schäpers Th, Lüh H 1997 Phys. Rev. B 55 R1958
[7] Nitta J, Akazaki T, Takayanagi H, Enoki T 1997 Phys. Rev. Lett. 78 1335
[8] Das B, Miller D C, Datta S, Reifenberger R, Hong W P, Bhattacharya P K, Singh J, Jaffe M 1989 Phys. Rev. B 39 1411
[9] Zhu B, Gui Y S, Qiu Z J, Zhou W Z, Yao W, Guo S L, Chu J H, Zhang F J 2006 Acta. Phys. Sin. 55 0786 (in Chinese) [朱博, 桂永胜, 仇志军, 周文政, 姚炜, 郭少令, 褚君浩, 张福甲 2006 物理学报 55 0786]
[10] Gui Y S, Hu C M, Chen Z H, Zheng G Z, Guo S L, Chu J H, Chen J X, Li A Z 2000 Phys. Rev. B 61 7237
[11] Nitta J, Lin Y, Akazaki T, Koga T 2003 Appl. Phys. Lett. 83 4565
[12] Dobers M, Vieren J P, Guldner Y, Bove P, Omnes F, Razeghi M 1989 Phys. Rev. B 40 8075
[13] Savel'ev I G, Kreshchuk A M, Novikov S V, Shik A Y, Remenyi G, Kovács Gy, Pôdör B, Gombos G 1996 J. Phys.: Condens. Matter 8 9025
[14] Das B, Datta S, Reifenberger R 1990 Phys. Rev. B 41 8278
[15] Gao H L, Li D L, Zhou W Z, Shang L Y, Wang B Q, Zhu Z P, Zeng Y P 2007 Acta. Phys. Sin. 56 4955 (in Chinese) [高宏玲, 李东临, 周文政, 商丽燕, 王宝强, 朱战平, 曾一平 2007 物理学报 56 4955]
[16] Shang L Y, Lin T, Zhou W Z, Huang Z M, Li D L, Gao H L, Cui L J, Zeng Y P, Guo S L, Chu J H 2008 Acta. Phys. Sin. 57 2481 (in Chinese) [商丽燕, 林铁, 周文政, 黄志明, 李东临, 高宏玲, 崔利杰, 曾一平, 郭少令, 褚君浩 2008 物理学报 57 2481]
[17] Zhou Y M, Shang L Y, Yu G, Gao K H, Zhou W Z, Lin T, Guo S L, Chu J H, Dai N, Austing D G 2009 J. Appl. Phys. 106 073722
[18] Lee Patrick A, Ramakrishnan T V 1985 Rev. Mod. Phys. 57 287
[19] Coleridge P T, Stoner R, Fletcher R 1989 Phys. Rev. B 39 1120
[20] Studenikin S A, Coleridge P T, Yu G, Poole P J 2005 Semicond. Sci. Technol. 20 1103
[21] Luo J, Munekata H, Fang F F, Stiles P J 1990 Phys. Rev. B 41 7685
[22] Cavalheiro A, da Silva E C F, Takahashi E K, Quivy A A, Leite J R, Meneses E A 2002 Phys. Rev. B 65 075320
[23] Henriques A B 1994 Phys. Rev. B 50 8568
[24] Nicholas R J, Brummell M A, Portal J C, Cheng K Y, Cho A Y, Pearsall T P 1983 Solid State Commun. 45 911
[25] Perea Ernesto H, Mendez Emilio E, Fonstad Clifton G 1980 Appl. Phys. Lett. 36 978
[26] Vehse Deborah L, Hummel S G, Cox H M, DeRosa F, Allen S J, Jr. 1986 Phys. Rev. B 33 5862
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