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Mechanism of NBTI degradation in ultra deep submicron PMOSFET’s

Li Zhong-He Liu Hong-Xia Hao Yue

Mechanism of NBTI degradation in ultra deep submicron PMOSFET’s

Li Zhong-He, Liu Hong-Xia, Hao Yue
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  • Abstract views:  3586
  • PDF Downloads:  2246
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  • Received Date:  20 May 2005
  • Accepted Date:  04 July 2005
  • Published Online:  15 February 2006

Mechanism of NBTI degradation in ultra deep submicron PMOSFET’s

  • 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071

Abstract: The mechanism of negative bias temperature instability (NBTI) degradation in ultra deep submicron PMOSFET's is investigated. We mainly focus on the threshold voltage shift under subsequent positive bias temperature (PBT) stress after the preceding NBT. It's experimentally demonstrated that trapped holes from inversion channel and the diffusion of hydrogen molecules in the gate oxide are the major causes of NBTI degradation in PMOSFET's. When the condition is switched to PBT stress the trapped holes can be rapidly detrapped, but only a part of hydrogen molecules can diffuse back to the interface of gate oxide and substrate and repassivate silicon dangling bond, this is responsible for the threshold voltage being only partially recovered during PBT annealing.

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