Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Effect of nitrogen pressure on structure and optical band gap of copper nitride thin films

Xu Hui Li Yan-Feng Li Ming-Jun Xiao Jian-Rong

Effect of nitrogen pressure on structure and optical band gap of copper nitride thin films

Xu Hui, Li Yan-Feng, Li Ming-Jun, Xiao Jian-Rong
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  4144
  • PDF Downloads:  1246
  • Cited By: 0
Publishing process
  • Received Date:  20 June 2006
  • Accepted Date:  07 December 2006
  • Published Online:  20 July 2007

Effect of nitrogen pressure on structure and optical band gap of copper nitride thin films

  • 1. (1)中南大学物理科学与技术学院,长沙 410083; (2)中南大学物理科学与技术学院,长沙 410083;桂林工学院数理系,桂林 541004

Abstract: Copper nitride (Cu3N) thin films were deposited on glass substrates by reactive radio frequency magnetron sputtering under different radio frequency power (P) and nitrogen partial pressure r(r=N2/[N2+Ar]). The thickness, crystalline structure and surface morphology of films were characterized by profilometer, X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The optical transmission spectrum was obtained by an ultraviolet-visible (UV-VIS) spectrophotometer and the optical band gap (Eg) was calculated. The results suggest that the films' deposition rate increases with P and r. The surface of the films reveals a compact structure, and the grain size of Cu3N is about 30nm. Meanwhile, with increasing r, the grain size and optical band gap of Cu3N increase, of which Eg ranges from 1.47 to 1.82eV, and the films' growth prefers the (111) direction at low r and the (100) direction at high r.

Catalog

    /

    返回文章
    返回