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Influence of boron on the properties of intrinsic microcrystalline silicon thin films

Sun Fu-He Zhang Xiao-Dan Wang Guang-Hong Xu Sheng-Zhi Yue Qiang Wei Chang-Chun Sun Jian Geng Xin-Hua Xiong Shao-Zhen Zhao Ying

Influence of boron on the properties of intrinsic microcrystalline silicon thin films

Sun Fu-He, Zhang Xiao-Dan, Wang Guang-Hong, Xu Sheng-Zhi, Yue Qiang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen, Zhao Ying
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  • Received Date:  27 May 2008
  • Accepted Date:  14 July 2008
  • Published Online:  20 February 2009

Influence of boron on the properties of intrinsic microcrystalline silicon thin films

  • 1. 南开大学光电子薄膜器件与技术研究所,光电子薄膜器件与技术天津市重点实验室,光电信息技术科学教育部重点实验室,天津 300071

Abstract: A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) in a single-chamber under different boron-contamination conditions. The influence of boron on the properties of intrinsic microcrystalline silicon thin film was studied. The results show that the dark conductivity decreases with the increase of boron contamination and the photosensitivity shows the opposite change. The activation energy varies due to different degrees of boron contamination on these thin films. The boron contamination decreases the crystalline volume fraction and weakens the (220) prefered orientation intensity. However, the effect of contamination is less serious to the material, prepared at relatively high power and high hydrogen dilution, which has higher crystalline volume fraction and stronger (220) preferred orientation.

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