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An optical emission spectroscopy study on the high rate growth of microcrystalline silicon films

Han Xiao-Yan Geng Xin-Hua Hou Guo-Fu Zhang Xiao-Dan Li Gui-Jun Yuan Yu-Jie Wei Chang-Chun Sun Jian Zhang De-Kun Zhao Ying

An optical emission spectroscopy study on the high rate growth of microcrystalline silicon films

Han Xiao-Yan, Geng Xin-Hua, Hou Guo-Fu, Zhang Xiao-Dan, Li Gui-Jun, Yuan Yu-Jie, Wei Chang-Chun, Sun Jian, Zhang De-Kun, Zhao Ying
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  • Received Date:  14 February 2008
  • Accepted Date:  15 July 2008
  • Published Online:  05 January 2009

An optical emission spectroscopy study on the high rate growth of microcrystalline silicon films

  • 1. 南开大学光电子薄膜器件与技术研究所,光电子薄膜器件与技术天津市重点实验室,光电信息技术科学教育部重点实验室,天津 300071

Abstract: The growth process of microcrystalline silicon thin films deposited at high growth rate was monitored online by optical emission spectroscopy. The properties of the material were studied by Raman and FTIR spectroscopy. The results indicated that the I[SiH*]/I[Hβ*] ratio decreased during the process, particularly at low total gas flows, which was consistent with the Raman results. The I[Hβ*]/I[Hα*]ratio detected after the plasma glowed for 5 minutes showed that the electronic temperature first decreased then increased with the increasing Ftotal. The FTIR spectra showed that the microstructure defect fraction R first decreased then increased with increasing Ftotal. This means that the electronic temperature in hydrogen plasma plays an important role in determining the properties of the microcrystalline silicon thin films.

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