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A PRELIMINARY STUDY ON THE RELAXATION OF Si(111) SURFACE ATOMS

ZHANG KAI-MING YE LING

A PRELIMINARY STUDY ON THE RELAXATION OF Si(111) SURFACE ATOMS

ZHANG KAI-MING, YE LING
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  • Received Date:  27 January 1979
  • Published Online:  29 July 2005

A PRELIMINARY STUDY ON THE RELAXATION OF Si(111) SURFACE ATOMS

  • 1. 复旦大学现代物理研究所

Abstract: In this paper the Extended Hucker Method is adopted and the Cluster model is used to calculated the surface relaxation of the Si (111) plane. The calculation shows that the surface atoms will be displaced inward with respect to their "ideal" positions by an amount of 0.10?. This expectation is in better agreement with the experimental results than previous empirical evaluations and theoretical calculations.

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