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Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile

Tang Zheng-Xia Shen Hong-Lie Jiang Feng Fang Ru Lu Lin-Feng Huang Hai-Bin Cai Hong

Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile

Tang Zheng-Xia, Shen Hong-Lie, Jiang Feng, Fang Ru, Lu Lin-Feng, Huang Hai-Bin, Cai Hong
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  • Received Date:  07 January 2010
  • Accepted Date:  25 May 2010
  • Published Online:  05 June 2010

Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile

  • 1. College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China

Abstract: In order to shorten processing time for large grain polycrystalline Si thin films prepared by aluminum induced crystallization, the stack of a-Si/SiO2/Al is deposited by radio frequency magnetron sputtering and annealed at two different irregular temperature profiles. The influence of irregular temperature profile on the processing of amorphous silicon prepared by the aluminum induced crystallization is investigated and the condition is discussed under which whether new nucleation appears when the annealing temperature increases. It turns out that the formation of nucleation is governed by the relationship among the grain radium at low temperature, the distance of depletion region, and the distance of adjacent grains.

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