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A new model is presented to predict the radiation response for complementary metal oxide semiconductor（CMOS）devices at low dose rate in space environment. In comparison with the linear system response theory model, the prediction results for CMOS devices at low dose rate radiation by using the new model are more close to actually experiment data, and the experimental results for different dose rate of radiation verify the accuracy of the model. Finally, the radiation effects on sensitive parameters of CMOS devices at low dose rate in space environment are predicted by making use of the new model.
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Keywords:
- ionizing radiation /
- total dose /
- low dose rate /
- prediction method
[1] ［1］Brown D B， Johnston A H 1987 IEEE Trans. Nucl. Sci. 34 1720
[2] ［2］Stapor W J, Meyers J P, Kinnison J D， Carkuff B G 1992 IEEE Trans. Nucl. Sci. 39 1876
[3] ［3］Pavan P, Tu R H， Minami ER 1994 IEEE Trans. Nucl. Sci. 41 2619
[4] ［4］ Zhang T Q, Liu J L, Li J J, Wang J P, Zhang Z X, Xu N J, Zhao Y F, Hu Y H 1999 Acta Phys. Sin. 48 2299 （in Chinese）［张廷庆、刘家璐、李建军、王剑平、张正选、徐娜军、赵元富、胡浴红 1999 物理学报 48 2299］
[5] ［5］ He B P, Wang G Z, Zhou H, Gong J C, Luo Y H 2003 Acta phys. Sin. 52 188 （in Chinese）［何宝平、王桂珍、周辉、龚建成、罗尹虹 2003 物理学报 52 188］
[6] ［6］MIL-STD 883D Test method 10194, issued January 1992 by the Defense electronics support center, Dayton, OH.
[7] ［7］Carriere T, Beaucour J, Gach A 1994 IEEE Trans. Nucl. Sci. 42 1567
[8] ［8］Winokur P S 1982 IEEE Trans. Nucl. Sci. 29 2102
[9] ［9］Winokur PS, Kerris K G, Harper L 1983 IEEE Trans. Nucl. Sci. 30 4326
[10] ］Schrimpf R D, Wahle P J 1988 IEEE Trans. Nucl. Sci. 35 1536
[11] ］Shvetzov-Shilovsky I N, Belyakov V V, Cherepko S V 1996 IEEE Trans. Nucl. Sci. 43 3182
[12] ］Zupac D, Galloway K F, Schrimpf R D 1993 J. Appl. Phys. 77 2910
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[1] ［1］Brown D B， Johnston A H 1987 IEEE Trans. Nucl. Sci. 34 1720
[2] ［2］Stapor W J, Meyers J P, Kinnison J D， Carkuff B G 1992 IEEE Trans. Nucl. Sci. 39 1876
[3] ［3］Pavan P, Tu R H， Minami ER 1994 IEEE Trans. Nucl. Sci. 41 2619
[4] ［4］ Zhang T Q, Liu J L, Li J J, Wang J P, Zhang Z X, Xu N J, Zhao Y F, Hu Y H 1999 Acta Phys. Sin. 48 2299 （in Chinese）［张廷庆、刘家璐、李建军、王剑平、张正选、徐娜军、赵元富、胡浴红 1999 物理学报 48 2299］
[5] ［5］ He B P, Wang G Z, Zhou H, Gong J C, Luo Y H 2003 Acta phys. Sin. 52 188 （in Chinese）［何宝平、王桂珍、周辉、龚建成、罗尹虹 2003 物理学报 52 188］
[6] ［6］MIL-STD 883D Test method 10194, issued January 1992 by the Defense electronics support center, Dayton, OH.
[7] ［7］Carriere T, Beaucour J, Gach A 1994 IEEE Trans. Nucl. Sci. 42 1567
[8] ［8］Winokur P S 1982 IEEE Trans. Nucl. Sci. 29 2102
[9] ［9］Winokur PS, Kerris K G, Harper L 1983 IEEE Trans. Nucl. Sci. 30 4326
[10] ］Schrimpf R D, Wahle P J 1988 IEEE Trans. Nucl. Sci. 35 1536
[11] ］Shvetzov-Shilovsky I N, Belyakov V V, Cherepko S V 1996 IEEE Trans. Nucl. Sci. 43 3182
[12] ］Zupac D, Galloway K F, Schrimpf R D 1993 J. Appl. Phys. 77 2910
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