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Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors

Li Bin Liu Hong-Xia Yuan Bo Li Jin Lu Feng-Ming

Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors

Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming
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  • Received Date:  02 April 2010
  • Accepted Date:  09 April 2010
  • Published Online:  15 January 2011

Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors

  • 1. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China

Abstract: In order to describe the electron mobility enhancement in inversion layer in strained-Si on Si1-xGex n type metal-oxide-semiconductor field-effect transistors (nMOSFETs), a new physically-based electron mobility model is presented in the paper. This model can not only show the dependence of acoustic phonon-limited mobility and surface roughness-limited mobility on transverse electrical field normal to the semiconductor-insulator interface, but also explains the electron mobility enhancement mechanism due to scattering suppression caused by germanium (Ge) content. The expression of the new model is simple and can simulate the mobility for any Ge content. Numerical analysis results show that this model fits the reported experimental data very well. In addition, this model can be easily included in the device simulator ISE and gives good agreement with simulated results of device simulator with built-in model.

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