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INVESTIGATION OF DIFFUSION MARKER IN THE FORMATION OF TiSi2 THIN FILMS

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INVESTIGATION OF DIFFUSION MARKER IN THE FORMATION OF TiSi2 THIN FILMS

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  • Received Date:  10 November 1986
  • Published Online:  05 June 1987

INVESTIGATION OF DIFFUSION MARKER IN THE FORMATION OF TiSi2 THIN FILMS

  • 1. 北京师范大学低能核物理研究所

Abstract: By means of Xe ion implantation as a diffusion marker, we have deterinined that Si is the dominant diffusion element in the formation of TiSi2 thin film. Applying the equation of Kioson and Tu with the result of our experiment, diffusion coefficients of Si and Ti in forming TiSi2 at 600℃ has been calculated.

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