Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Experimental and theoretical studies on the influence of unintentionally doped carbon on magnetic properties in ZnMnO:N

Wu Kong-Ping Gu Shu-Lin Zhu Shun-Ming Huang You-Rui Zhou Meng-Ran

Experimental and theoretical studies on the influence of unintentionally doped carbon on magnetic properties in ZnMnO:N

Wu Kong-Ping, Gu Shu-Lin, Zhu Shun-Ming, Huang You-Rui, Zhou Meng-Ran
PDF
Get Citation
  • Mn-N co-doped ZnO film on sapphire substrate is fabricated by metal-organic chemical vapor deposition method with changing the acceptor-doped source and importing the hydrogen and increasing the pressure to suppress carbon (C) approach gradually. X-ray diffraction displays the strong C-axis orientation. Raman sepectrum is employed to analyze vibration modes related to C elements. Hall measurements on the samples by van der Pauw method reveal the transition from n-type to p-type after suppression of C, which is possible due to the complex of (CN)O acting as a shallow donor. The first principles simulation calculation for Mn and N codoped ZnO crystals has been perfermed, and the total density of states reveals the strong p-d interaction and magnetic moment existing in the Mn and N codoped ZnO. The introduction of the complex of (CN)O, causes the p-d interaction to disappear and the magnetic moment to reduce even disappear. Therefore, the formation of magnetic bound polaron of Mn 3d electronics and N 2p local bound electronic determines the magnetic interaction effect, which can be explained from the theoretical predication on the Mn 3d and N 2p ferromagnetic (hole) coupling on the ferromagnetism.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 60990312, 61025020) and the National High Technology Research and Development Program of China (Grant No. 2007AA03Z404).
    [1]

    özgür ü, Alivov Y I, Liu C, Teke A, Reshchikov M A, Do?gan S,Avrutin V, Cho S J, Morko H 2005 J. Appl. Phys. 98 041301

    [2]

    Dietl T, Ohno H, Matsukura F 2000 Science 287 1019

    [3]

    Bi Y J, Guo Z Y, Sun H Q, Lin Z, Dong Y C 2008 Acta Phys. Sin.57 7800 (in Chinese) [毕艳军, 郭志友, 孙慧卿, 林竹, 董玉成 2008 物理学报 57 7800]

    [4]

    Yu Z, Li X, Long X, Cheng XW,Wang J Y, Liu Y, Cao MS,WangF C 2008 Acta Phys. Sin. 57 4539 (in Chinese) [于宙, 李祥, 龙雪, 程兴旺, 王晶云, 刘颖, 曹茂盛, 王富耻 2008 物理学报 57 4539]

    [5]

    Sharma P, Gupta A, Rao K V 2003 Nat. Mater. 2 673

    [6]

    Liu S M, Gu S L, Ye J D, Zhu S M, Liu W, Tang K, Shan Z P,Zhang R, Zheng Y D, Sun X W 2008 Appl. Phys. A 91 535

    [7]

    Wu K P, Gu S L, Tang K, Zhu S M, Xu M X, Zhang R, Zheng YD 2009 J. Appl. Phys. 106 113710

    [8]

    Wu K P, Gu S L, Tang K, Zhu S M, Zhang R, Zheng Y D 2011Thin Solid Films 519 2499

    [9]

    Nickel N H, Friedrich F, Rommeluère J F, Galtier P 2005 Appl.Phys. Lett. 87 211905

    [10]

    Tang K, Gu S L, Zhu S M, Liu J G, Chen H, Ye J D, Zhang RZheng Y D 2009 Appl. Phys. Lett. 95 192106

    [11]

    Chen H, Gu S L, Liu W, Zhu S M, Zheng Y D 2008 J. Appl. Phys.104 113511

    [12]

    Segall M D, Lindan P J D, Probert M J 2002 J. Phys. Cond. Matt.14 2717

    [13]

    Marlo M 2000 Phys. Rev. B 62 2899

    [14]

    Yuan D, Huang D H, Luo H F,Wang F H 2010 Acta Phys. Sin. 596457 (in Chinese) [袁娣, 黄多辉, 罗华锋, 王藩侯 2010 物理学报 59 6457]

    [15]

    Duan M Y, Xu M, Zhou H P, Chen Q Y, Hu Z G, Dong C J 2007Acta Phys. Sin. 56 5359 (in Chinese) [段满益, 徐明, 周海平, 陈青云, 胡志刚, 董成军 2007 物理学报 56 5359]

    [16]

    Ye J D, Gu S L, Zhu S M, Zhang R, Zheng Y D 2006 Appl. Phys.Lett. 88 101905

    [17]

    Tang K, Gu S L, Zhu S M, Liu W, Ye J D, Zhu J M, Zhang R,Zheng Y D, Sun X W 2008 Appl. Phys. Lett. 93 132107

    [18]

    Li X, Keyes B, Asher S, Zhang S B, Wei S H, Coutts T J, LimpijumnongS, van de Walle C G 2005 Appl. Phys. Lett. 86 122107

    [19]

    Li X, Asher S E, Limpijumnong S, Zhang S B,Wei S H, Barnes TM, Coutts T J, Noufi R 2006 J. Vac. Sci. Technol. A 24 1213

    [20]

    Zhang S B, Northrup J E 1991 Phys. Rev. Lett. 67 2339

    [21]

    Wang Q, Sun Q, Jena P, Kawazoe Y 2004 Phys. Rev. B 70 052408

    [22]

    Dietl T, Andrearczyk T, Lipinska A, Kiecana M, Tay M, Wu Y H2007 Phys. Rev. B 76 155312

    [23]

    Dietl T 2006 Nat. Mater. 5 673

    [24]

    Zhang S B, Wei S H, Zunger A 2001 Phys. Rev. B 63 075205

    [25]

    Yadav M K, Sanyal B, Mookerjee A 2009 J. Magn. Magn. Mater.321 273

    [26]

    Liu Q H, Sun Z H, Yan W Y, Zhong W J, Pan Z Y, Hao L Y, WeiS Q 2007 Phys. Rev. B 76 245210

    [27]

    Liu E Z, He Y, Jiang J Z 2006 Appl. Phys. Lett. 89 122504

    [28]

    Hsu H S, Huang J C A, Huang Y H, Liao Y F, Lin M Z, Lee C H2006 Appl. Phys. Lett. 89 122504

  • [1]

    özgür ü, Alivov Y I, Liu C, Teke A, Reshchikov M A, Do?gan S,Avrutin V, Cho S J, Morko H 2005 J. Appl. Phys. 98 041301

    [2]

    Dietl T, Ohno H, Matsukura F 2000 Science 287 1019

    [3]

    Bi Y J, Guo Z Y, Sun H Q, Lin Z, Dong Y C 2008 Acta Phys. Sin.57 7800 (in Chinese) [毕艳军, 郭志友, 孙慧卿, 林竹, 董玉成 2008 物理学报 57 7800]

    [4]

    Yu Z, Li X, Long X, Cheng XW,Wang J Y, Liu Y, Cao MS,WangF C 2008 Acta Phys. Sin. 57 4539 (in Chinese) [于宙, 李祥, 龙雪, 程兴旺, 王晶云, 刘颖, 曹茂盛, 王富耻 2008 物理学报 57 4539]

    [5]

    Sharma P, Gupta A, Rao K V 2003 Nat. Mater. 2 673

    [6]

    Liu S M, Gu S L, Ye J D, Zhu S M, Liu W, Tang K, Shan Z P,Zhang R, Zheng Y D, Sun X W 2008 Appl. Phys. A 91 535

    [7]

    Wu K P, Gu S L, Tang K, Zhu S M, Xu M X, Zhang R, Zheng YD 2009 J. Appl. Phys. 106 113710

    [8]

    Wu K P, Gu S L, Tang K, Zhu S M, Zhang R, Zheng Y D 2011Thin Solid Films 519 2499

    [9]

    Nickel N H, Friedrich F, Rommeluère J F, Galtier P 2005 Appl.Phys. Lett. 87 211905

    [10]

    Tang K, Gu S L, Zhu S M, Liu J G, Chen H, Ye J D, Zhang RZheng Y D 2009 Appl. Phys. Lett. 95 192106

    [11]

    Chen H, Gu S L, Liu W, Zhu S M, Zheng Y D 2008 J. Appl. Phys.104 113511

    [12]

    Segall M D, Lindan P J D, Probert M J 2002 J. Phys. Cond. Matt.14 2717

    [13]

    Marlo M 2000 Phys. Rev. B 62 2899

    [14]

    Yuan D, Huang D H, Luo H F,Wang F H 2010 Acta Phys. Sin. 596457 (in Chinese) [袁娣, 黄多辉, 罗华锋, 王藩侯 2010 物理学报 59 6457]

    [15]

    Duan M Y, Xu M, Zhou H P, Chen Q Y, Hu Z G, Dong C J 2007Acta Phys. Sin. 56 5359 (in Chinese) [段满益, 徐明, 周海平, 陈青云, 胡志刚, 董成军 2007 物理学报 56 5359]

    [16]

    Ye J D, Gu S L, Zhu S M, Zhang R, Zheng Y D 2006 Appl. Phys.Lett. 88 101905

    [17]

    Tang K, Gu S L, Zhu S M, Liu W, Ye J D, Zhu J M, Zhang R,Zheng Y D, Sun X W 2008 Appl. Phys. Lett. 93 132107

    [18]

    Li X, Keyes B, Asher S, Zhang S B, Wei S H, Coutts T J, LimpijumnongS, van de Walle C G 2005 Appl. Phys. Lett. 86 122107

    [19]

    Li X, Asher S E, Limpijumnong S, Zhang S B,Wei S H, Barnes TM, Coutts T J, Noufi R 2006 J. Vac. Sci. Technol. A 24 1213

    [20]

    Zhang S B, Northrup J E 1991 Phys. Rev. Lett. 67 2339

    [21]

    Wang Q, Sun Q, Jena P, Kawazoe Y 2004 Phys. Rev. B 70 052408

    [22]

    Dietl T, Andrearczyk T, Lipinska A, Kiecana M, Tay M, Wu Y H2007 Phys. Rev. B 76 155312

    [23]

    Dietl T 2006 Nat. Mater. 5 673

    [24]

    Zhang S B, Wei S H, Zunger A 2001 Phys. Rev. B 63 075205

    [25]

    Yadav M K, Sanyal B, Mookerjee A 2009 J. Magn. Magn. Mater.321 273

    [26]

    Liu Q H, Sun Z H, Yan W Y, Zhong W J, Pan Z Y, Hao L Y, WeiS Q 2007 Phys. Rev. B 76 245210

    [27]

    Liu E Z, He Y, Jiang J Z 2006 Appl. Phys. Lett. 89 122504

    [28]

    Hsu H S, Huang J C A, Huang Y H, Liao Y F, Lin M Z, Lee C H2006 Appl. Phys. Lett. 89 122504

  • [1] Yu Zhou, Li Xiang, Long Xue, Cheng Xing-Wang, Liu Ying, Cao Mao-Sheng, Wang Fu-Chi, Wang Jing-Yun. Study of synthesis and magnetic properties of Mn-doped ZnO diluted magnetic semiconductors. Acta Physica Sinica, 2008, 57(7): 4539-4544. doi: 10.7498/aps.57.4539
    [2] Shi Li-Bin, Xiao Zhen-Lin. Origin of ferromagnetic properties in Ni doped ZnO by the first principles study. Acta Physica Sinica, 2011, 60(2): 027502. doi: 10.7498/aps.60.027502
    [3] Cheng Xing-Wang, Li Xiang, Gao Yuan-Ling, Yu Zhou, Long Xue, Liu Ying. Synthesis and magnetic, optical properties of Co doped ZnO room-temperature ferromagnetic semiconductor. Acta Physica Sinica, 2009, 58(3): 2018-2022. doi: 10.7498/aps.58.2018
    [4] Zeng Yong-Zhi, Zhu Zi-Zhong, Lin Qiu-Bao, Li Ren-Quan. Electronic and magnetic properties of 3d transition-metal-doped Ⅲ-Ⅴ semiconductors:first-principle calculations. Acta Physica Sinica, 2006, 55(2): 873-878. doi: 10.7498/aps.55.873
    [5] Li Zhi-Wen, Qi Yun-Kai, Gu Jian-Jun, Sun Hui-Yuan. Influence of annealing ambience on the magnetic properties of doped ZnO films. Acta Physica Sinica, 2012, 61(13): 137501. doi: 10.7498/aps.61.137501
    [6] Lin Zhu, Guo Zhi-You, Bi Yan-Jun, Dong Yu-Cheng. Ferromagnetism and the optical properties of Cu-doped AlN from first-principles study. Acta Physica Sinica, 2009, 58(3): 1917-1923. doi: 10.7498/aps.58.1917
    [7] Wu Dong-Jiang, Wang Ye-An, Qin Fu-Wen, Wu Ai-Min, Xu Yin, Gu Biao. Analysis of diluted magnetic semiconductor GaMnN grown by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition. Acta Physica Sinica, 2008, 57(1): 508-513. doi: 10.7498/aps.57.508
    [8] Pan Feng-Chun, Xu Jia-Nan, Yang Hua, Lin Xue-Ling, Chen Huan-Ming. Ferromagnetism of undoped anatase TiO2 based on the first-principles calculations. Acta Physica Sinica, 2017, 66(5): 056101. doi: 10.7498/aps.66.056101
    [9] Yao Zhong-Yu, Sun Li, Pan Meng-Mei, Sun Shu-Juan, Liu Han-Jun. First-principles study on half-metallic ferromagnetism of half-Heusler alloys VLiBi and CrLiBi. Acta Physica Sinica, 2018, 67(21): 217501. doi: 10.7498/aps.67.20181129
    [10] Wang Yi, Sun Lei, Han De-Dong, Liu Li-Feng, Kang Jin-Feng, Liu Xiao-Yan, Zhang Xing, Han Ru-Qi. Room-temperature ferromagnetism in Co-doped ZnO diluted magnetic semiconductor. Acta Physica Sinica, 2006, 55(12): 6651-6655. doi: 10.7498/aps.55.6651
    [11] Gu Jian-Jun, Sun Hui-Yuan, Liu Li-Hu, Qi Yun-Kai, Xu Qin. Influence of structural phase transition on Ferromagnetism in Fe-doped TiO2 thin films. Acta Physica Sinica, 2012, 61(1): 017501. doi: 10.7498/aps.61.017501
    [12] Li Ming-Biao, Zhang Tian-Xian, Shi Li-Bin. Magnetic properties of N-doped(1120) ZnO thin films. Acta Physica Sinica, 2011, 60(9): 097504. doi: 10.7498/aps.60.097504
    [13] Wang Shi-Wei, Zhu Ming-Yuan,  Zhong Min, Liu Cong, Li Ying, Hu Ye-Min, Jin Hong-Ming. Effects of pulsed magnetic field on Mn-doped ZnO diluted magnetic semiconductor prepared by hydrothermal method. Acta Physica Sinica, 2012, 61(19): 198103. doi: 10.7498/aps.61.198103
    [14] Wei Zhi-Ren, Li Jun, Liu Chao, Lin Lin, Zheng Yi-Bo, Ge Shi-Yan, Zhang Hua-Wei, Dong Guo-Yi, Dou Jun-Hong. Effect of Cu on the magnetism of Zn1-xFexO DMS. Acta Physica Sinica, 2006, 55(10): 5521-5524. doi: 10.7498/aps.55.5521
    [15] Zhu Meng-Yao, Lu Jun, Ma Jia-Lin, Li Li-Xia, Wang Hai-Long, Pan Dong, Zhao Jian-Hua. Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films. Acta Physica Sinica, 2015, 64(7): 077501. doi: 10.7498/aps.64.077501
    [16] Zhu Ming-Yuan, Liu Cong, Bo Wei-Qiang, Shu Jia-Wu, Hu Ye-Min, Jin Hong-Ming, Wang Shi-Wei, Li Ying. Synthesis of Cr-doped ZnO diluted magnetic semiconductor by hydrothermal method under pulsed magnetic field. Acta Physica Sinica, 2012, 61(7): 078106. doi: 10.7498/aps.61.078106
    [17] Wang Ai-Ling, Wu Zhi-Min, Wang Cong, Hu Ai-Yuan, Zhao Ruo-Yu. First-priciples study on Mn-doped LiZnAs, a new diluted magnetic semiconductor. Acta Physica Sinica, 2013, 62(13): 137101. doi: 10.7498/aps.62.137101
    [18] Fan Ji-Yu, Feng Yu, Lu Di, Zhang Wei-Chun, Hu Da-Zhi, Yang Yu-E, Tang Ru-Jun, Hong Bo, Ling Lang-Sheng, Wang Cai-Xia, Ma Chun-Lan, Zhu Yan. Magnetic and eletronic transport properties in n-type diluted magnetic semiconductor Ge0.96–xBixFe0.04Te film. Acta Physica Sinica, 2019, 68(10): 107501. doi: 10.7498/aps.68.20190019
    [19] Chen Shan, Wu Qing-Yun, Chen Zhi-Gao, Xu Gui-Gui, Huang Zhi-Gao. Ferromagnetism of C doped ZnO: first-principles calculation and Monte Carlo simulation. Acta Physica Sinica, 2009, 58(3): 2011-2017. doi: 10.7498/aps.58.2011
    [20] Ji Yang, Zhao Jian-Hua, Yang Wei, Luo Hai-Hui, Ruan Xue-Zhong, Wang Wei-Zhu. Electronic noise of diluted magnetic semiconductor (Ga,Mn)As around Curie point. Acta Physica Sinica, 2009, 58(12): 8560-8565. doi: 10.7498/aps.58.8560
  • Citation:
Metrics
  • Abstract views:  1560
  • PDF Downloads:  548
  • Cited By: 0
Publishing process
  • Received Date:  27 September 2011
  • Accepted Date:  24 October 2011
  • Published Online:  05 March 2012

Experimental and theoretical studies on the influence of unintentionally doped carbon on magnetic properties in ZnMnO:N

  • 1. School of Electrical and Information Engineering, Anhui University of Science and Technology, Huainan 232001, China;
  • 2. School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 60990312, 61025020) and the National High Technology Research and Development Program of China (Grant No. 2007AA03Z404).

Abstract: Mn-N co-doped ZnO film on sapphire substrate is fabricated by metal-organic chemical vapor deposition method with changing the acceptor-doped source and importing the hydrogen and increasing the pressure to suppress carbon (C) approach gradually. X-ray diffraction displays the strong C-axis orientation. Raman sepectrum is employed to analyze vibration modes related to C elements. Hall measurements on the samples by van der Pauw method reveal the transition from n-type to p-type after suppression of C, which is possible due to the complex of (CN)O acting as a shallow donor. The first principles simulation calculation for Mn and N codoped ZnO crystals has been perfermed, and the total density of states reveals the strong p-d interaction and magnetic moment existing in the Mn and N codoped ZnO. The introduction of the complex of (CN)O, causes the p-d interaction to disappear and the magnetic moment to reduce even disappear. Therefore, the formation of magnetic bound polaron of Mn 3d electronics and N 2p local bound electronic determines the magnetic interaction effect, which can be explained from the theoretical predication on the Mn 3d and N 2p ferromagnetic (hole) coupling on the ferromagnetism.

Reference (28)

Catalog

    /

    返回文章
    返回