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Key issues for high-efficiency silicon thin film solar cells prepared by RF-PECVD under high-pressure-depletion conditions

Hou Guo-Fu Xue Jun-Ming Yuan Yu-Jie Zhang Xiao-Dan Sun Jian Chen Xin-Liang Geng Xin-Hua Zhao Ying

Key issues for high-efficiency silicon thin film solar cells prepared by RF-PECVD under high-pressure-depletion conditions

Hou Guo-Fu, Xue Jun-Ming, Yuan Yu-Jie, Zhang Xiao-Dan, Sun Jian, Chen Xin-Liang, Geng Xin-Hua, Zhao Ying
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  • Received Date:  30 March 2011
  • Accepted Date:  25 June 2011
  • Published Online:  05 March 2012

Key issues for high-efficiency silicon thin film solar cells prepared by RF-PECVD under high-pressure-depletion conditions

  • 1. Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices andTechnique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education (Nankai University),Tianjin 300071, China
Fund Project:  Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, 2011CBA00707), the National High Technology Research and Development of China (Grant No. 2009AA050602), and the Open Project of Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedicak Instruments, China (Grant No. JSNBI201001).

Abstract: Our recent work on deposition and characterization of hydrogenated microcrystalline silicon (μ c-Si:H) thin films and silicon thin film solar cells prepared by RF-PECVD under high-pressure-depletion conditions is summarized in this paper. Several key issues are studied in detail: 1) process windows for device-quality μ c-Si:H thin films, 2) formation mechanism of amorphous silicon incubation layer and the effective methods to reduce the incubation layer thickness, 3) modification of crystalline fraction volume of intrinsic μ c-Si:H layers and its influence on the device performance of μ c-Si:H solar cells, 4) deposition of high conductive p-type μ c-Si:H window layers with high crystalline fraction volume, and the influence of p-layer on the device performance. After solving the above key issues, a high efficiency of 8.16% is obtained for μ c-Si:H sing-junction solar cell with intrinsic layer prepared by RF-PECVD under high-pressure-depletion conditions. When it is used as bottom cell in a-Si:H/μ c-Si:H tandem solar cell, the efficiency of tandem cell reaches 11.61%.

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